• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.2
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• pp.69-75
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• 1999

The characteristics of $H_2$ gas detection have been investigated using the Pt-MIS capacitor composed of the LPCVD nitride on the oxide. The flat band voltage shift is measured as 0.1 V in 1,000 ppm $H_2$ gas ambient and to be independent of Pt catalyst thickness. It is found that the flatband voltage shift is proportional to the hydrogen concentrations. The response and recovery time of Pt-MIS capacitor are 5 mins and 25 mins respectively. The samples of 30nm thick Pt revealed much higher sensitivity than that of 150nm samples. The samples of 150nm Pt showed that the flatband voltage shift of the device is due to the formation of the dipole layer of the adsorbed hydrogen atoms at the Pt-insulator interface.

• Journal of Sensor Science and Technology
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• v.25 no.2
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• pp.116-123
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• 2016

This paper presents the fabrication and evaluation of the novel drag force type air flowmeter using MEMS technologies for the vehicle applications. To obtain the air drag force, the flowmeter utilized the curved beam structure, which was realized by the difference of residual stress between the silicon oxide layer and the silicon nitride layer. The paddle structure was applied for the maximum air drag force, and the dual-beam was adapted to prevent distortion. The basic experiments were performed in the wind tunnel, and the stable outputs were obtained. The device was applied to the internal combustion engine, and the results were compared with the HI-DS output where the convection thermal flowmeter was used as the reference sensor. The results indicated that the comparable resolutions and response times were obtained under the various engine speeds.

• Journal of IKEEE
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• v.19 no.1
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• pp.41-44
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• 2015

Silicon trench process for bulk fin field effect transistor (finFET) is suggested without using chemical mechanical polishing (CMP) that cause contamination problems with chemical stuff. This process uses thickness difference of photo resistor spin coating and silicon nitride sacrificial layer. Planarization of silicon oxide and silicon trench formation can be performed with etching processes. In this work 50 nm silicon trench is fabricated with AZ 1512 photo resistor and process results are introduced.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.364.1-364.1
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• 2014

고효율 태양전지로 가기 위해서는 태양전지의 후면 패시베이션은 중요한 역할을 한다. 후면 패시베이션 막으로 사용되는 $Al_2O_3$ 막은 $Al_2O_3/Si$ 계면에서 높은 화학적 패시베이션과 Negative Fixed Charge를 가지고 있어 적합한 Barrier막으로 여겨진다. 하지만 이후에 전면 Metal paste의 소성 공정에 의해 $800^{\circ}C$이상 온도를 올려주게 됨에 따라 $Al_2O_3$ 막 내부에 결합되어 있던 수소들이 방출되어 blister가 생성되고 막 질은 떨어지게 된다. 우리는 blister가 생성되는 것을 방지하기 위한 방법으로 PECVD 장비로 SiNx를 증착하는 공정 중에 $N_2O$ 가스를 첨가하여 SiON 막을 증착하였다. SiON막은 $N_2O$가스량을 조절하여 막의 특성을 변화시키고 변화에 따라 소성시 막에 미치는 영향에 대하여 조사하였다. 공정을 위해 $156{\times}156mm2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type 단결정 실리콘 웨이퍼를 사용하였고, $Al_2O_3$ 막을 올리기 전에 RCA Cleaning 실행하였다. ALD 장비를 통해 $Al_2O_3$ 막을 10nm 증착하였고 RF-PECVD 장비로 SiNx막과 SiON막을 80nm 증착하였다. 소성로에서 $850^{\circ}C$ ($680^{\circ}C$) 5초동안 소성하고 QSSPC를 통해 유효 반송자 수명을 알아보았다.

• The Transactions of the Korean Institute of Power Electronics
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• v.22 no.4
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• pp.297-304
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• 2017

The purpose of this paper is to analyze losses because of switching devices and the secondary side circuit diodes of 500 W full bridge dc-dc converter by applying gallium nitride (GaN) field-effect transistor (FET), which is one of the wide band gap devices. For the detailed device analysis, we translate the specific resistance relation caused by the GaN FET material property into algebraic expression, and investigate the influence of the GaN FET structure and characteristic on efficiency and system specifications. In addition, we mathematically compare the diode rectifier circuit loss, which is a full bridge dc-dc converter secondary side circuit, with the synchronous rectifier circuit loss using silicon metal-oxide semiconductor (Si MOSFET) or GaN FET, which produce the full bridge dc-dc converter analytical value validity to derive the final efficiency and loss. We also design the heat sink based on the mathematically derived loss value, and suggest the heat sink size by purpose and the heat divergence degree through simulation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.356-357
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• 2005

Chemical mechanical polishing (CMP) allows the planarization of wafers with two or more materials at their surfaces. Especially, polishing pad is considered as one of the most important consumables because of its properties. Subject of this investigation is to apply CMP for planarization of shallow trench isolation structure using microstructure pad. Microstructure pad is designed to have uniform structure on its surface and fabricated by micro-molding technology. And then STI CMP performances such as oxide dishing and nitride corner rounding are evaluated.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.11a
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• pp.78-87
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• 2001

The friction and wear behaviors of WC/C multilayer coating were investigated by using a pin on disk type tester. The experiment was conducted by using silicon nitride (S $i_{3}$ $N_{4}$) as a pin material and WC/C multilayer coating on bearing steel (STB2) as a disk material, under various environments that are atmospheric conditions of high vacuum( 1,3$\times$10$^{-4}$ Pa), medium vacuum( 1.3$\times$10$^{-l}$Pa). ambient air( 10$^{5}$ pa)(3 types) and relative humidity(2~98%) conditions. The results showed that WC/C coating fracture was suddenly increased with increasing degree of vacuum, because of high adhesion. So, WC/C coating could not be displayed their ability as solid lubricant. WC/C coating could be displayed better abilitv as solid lubricant with increasing relative humidity. because of oxide film, size and shape of wear debris. The friction coefficient and specific wear rate became better about RH 50%.%.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.899-901
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• 2009

The magnesium fluoride ($MgF_2$) has very higher optical transmission than oxide or nitride material applied for gas barrier, so we manufactured Mg-Zn-F films with Mg-Zn-F target mixed in the various ratio of $MgF_2$ to Zn and characterized films' properties. Zn is used to increase packing density of barrier film. Thickness and optical transmission of Mg-Zn-F are 200 nm and over 90 %, respectively. The result of water vapor transmission rate at 38, RH 90 ~ 100% of the Mg-Zn-F film deposited with 4 : 6 ($MgF_2$ : Zn) ratio target reached below $1{\times}10^{-3}g$/($m^2{\cdot}day$), measuring limit of instrument.

• ETRI Journal
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• v.38 no.1
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• pp.133-140
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• 2016

This paper presents a method of parasitic inductance reduction for high-speed switching and high-efficiency operation of a cascode structure with a low-voltage enhancement-mode silicon (Si) metal-oxide-semiconductor field-effect transistor (MOSFET) and a high-voltage depletion-mode gallium nitride (GaN) fielde-ffect transistor (FET). The method is proposed to add a bonding wire interconnected between the source electrode of the Si MOSFET and the gate electrode of the GaN FET in a conventional cascode structure package to reduce the most critical inductance, which provides the major switching loss for a high switching speed and high efficiency. From the measured results of the proposed and conventional GaN cascode FETs, the rising and falling times of the proposed GaN cascode FET were up to 3.4% and 8.0% faster than those of the conventional GaN cascode FET, respectively, under measurement conditions of 30 V and 5 A. During the rising and falling times, the energy losses of the proposed GaN cascode FET were up to 0.3% and 6.7% lower than those of the conventional GaN cascode FET, respectively.

• Nuclear Engineering and Technology
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• v.40 no.2
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• pp.99-106
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• 2008

Through mechanical alloying, hot isostatic pressing and hot rolling, a 9%Cr Fe-based oxide dispersion-strengthened alloy sample was fabricated. The tensile strength of the alloy is significantly improved when the microstructure is modified during the post-consolidation process. The alloy samples were strengthened as the cooling rates increased, though the elongation was somewhat reduced. With a cooling rate of $800^{\circ}C/s$ after normalization at $1150^{\circ}C$, the alloy sample showed a tensile strength of 1450 MPa, which is about twice that of the hot rolled sample; however, at $600^{\circ}C$ the tensile strength dramatically decreased to 620 MPa. Optical microscope and transmission electron microscope were used to investigate the microstructural changes of the specimens. The resultant strengthening of the alloy sample could be mainly attributed to the interstitially dissolved nitrogen, the fraction of the tempered martensite, the fine grain and the presence of a smaller precipitate. The decrease in the tensile strength was mainly caused by the precipitation of vanadium-rich nitride.