• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.2 s.344
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• pp.13-17
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• 2006

Pentacene channel for organic thin film transistor was deposited on the SiOC film by thermal evaporation. The growth of pentacene is related with the Diels-Alder reaction and the nucleophilic reaction by the thermal induction. The surface is an important factor to control the recursive Diels-Alder reaction for growing of pentacene on SiOC far The terminal C=C double bond of pentacene molecule was broken easily as a result of attack of the nucleophilic reagents on the surface of SiOC film. The nucleophilic reaction can be accelerated by increasing temperature on surface, and it maks pentacene to grow hardly on the SiOC film with a flow rate ratio of $O_2/(BTMSM+O_2)=0.5$ due to its inorganic property. The nucleophlic reaction mechanism is $SN_2(bimolecular nucleophilic substitution)$ type.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.112-116
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• 2007

We have investigated the hysteresis phenomenon of a hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) and analyzed the effect of hysteresis phenomenon when a-Si:H TFT is a pixel element of active matrix organic light emitting diode (AMOLED). When a-Si:H TFT is addressed to different starting gate voltages, such as 10V and 5V, the measured transfer characteristics with 1uA at $V_{DS}$ = 10V shows that the gate voltage shift of 0.15V is occurred due to the different quantities of trapped charge. When the step gate-voltage in the transfer curve is decreased from 0.5V to 0.05V, the gate-voltage shift is decreased from 0.78V to 0.39V due to the change of charge do-trapping rate. The measured OLED current in the widely used 2-TFT pixel show that a gate-voltage of TFT in the previous frame can influence OLED current in the present frame by 35% due to the change of interface trap density induced by different starting gate voltages.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.230-231
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• 2007

we fabricated a pentacene thin-film transistor with an $Al_2O_3$ layer of ALD as a gate insulator and obtained a device with better electrical characteristics at low operating voltages (below 16V). This device was found to have a field-effect mobility of $0.03cm^2/Vs$, a threshold voltage of -6V, an subthreshold slope of 1 V/decade, and an on/off current ratio of $10^6$.

• Polymer(Korea)
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• v.30 no.3
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• pp.253-258
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• 2006

We have fabricated vortical type organic thin film transistors (OTFTs) consisting of ITO/n type active material/Al gate/n type active material/Al using F16CuPc, NTCDA, PTCDA and PTCDI C-8. The effect of mobility of n type active materials and thin film thickness on current-voltage (I-V) characteristics and on/off ratios were investigated. The vortical type organic transistor using PTCDI C-8 exhibited low operation voltage and high on-off ratio. In addition, we have investigated the feasibility of application in organic light emitting transistor using light emitting polymer. Especially, the light emitting transistor consisting of ITO/PEDOT-PSS/P3HT/F16CuPc/Al gate/F16CuPc/Al showed the maximum quantum efficiency of 0.054.

• Electrical & Electronic Materials
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• v.17 no.8
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• pp.3-12
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• 2004

유기 박막 트랜지스터 (Organic Thin film Transistors ； 이하 OTFT)는 1986년부터(1) 반도체 장치의 새로운 부류로 급속하게 발전해 오고 있다. 반도체 산업에 있어 이러한 유기물질의 큰 발전은 1947년에 있었던 최초의 inorganic FET (Field Effect Transistor) 탄생에 버금갈 만한 성과라고 여겨진다.(중략)

• Advanced Industrial SCIence
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• v.1 no.1
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• pp.16-22
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• 2022

Starting with cathode ray tubes, displays are forming markets in the order of active marix organic light emitting diode (AMOLED) after PDP (Plasma Display Panel) and LCD (Liquid Crystal Display). OLED is recognized as a key field for the development of each country preparing for the fourth industrial revolution, and especially Samsung Display and LG Display, which are the top industries in Korea, are leading the market with more than 90% of OLED shares. Currently, AMOLED has moved to the area that can be folded or bent. This technology is possible because TFT (Thin Film Transistor) and OLED may be formed on a flexible substrate. In the future, the technology will move to stretchable displays, and for this, the development of substrate materials is first, and then TFT and OLED devices should also be implemented with stretchable materials.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.155-158
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• 2007

Printed organic thin-film transistor(OTFT) to use as a switching device for an organic light emitting diode(OLED) were fabricated in the microcontact printing and direct printing processes at room temperature. The gate electrodes($5{\mu}m$, $10{\mu}m$, and $20{\mu}m$) of OTFT was fabricated using microcontact printing process, and source/drain electrodes ($W/L=500{\mu}m/5{\mu}m$, $500{\mu}m/10{\mu}m$, and $500{\mu}m/20{\mu}m$) was fabricated using direct printing process with hard poly(dimethylsiloxane)(h-PDMS) stamp. Printed OTFT with dielectric layer was formed using special coating system and organic semiconductor layer was ink-jet printing process. Microcontact printing and direct printing processes using h-PDMS stamp made it possible to fabricate printed OTFT with channel lengths down to $5{\mu}m$, and reduced the process by 20 steps compared with photolithography. As results of measuring he transfer characteristics and output characteristics of OTFT fabricated with the printing process, the field effect characteristic was verified.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.4
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• pp.161-168
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• 2001

Organic thin film transitors(TFTs) are of interest for use in broad area electronic applications. For example, in active matrix liquid crystal displays(AMLCDs), organic TFTs would allow the use of inexpensive, light-weight, flexible, and mechanically rugged plastic substrates as an alternative to the glass substrates needed for commonly used hydrogenated amorphous silicon(a-Si:H). Recently pentacene TFTs with carrier field effect, mobility as large as 2 $cm^2V^{-1}s^{-1}$ have been reported for TFTs fabricated on silicon substrates, and it is higher than that of a-Si:H. But these TFTs are fabricated on silicon wafer and $SiO_2$ was used as a gate insulator. $SiO_2$ deposition process requires a high insulator which is polyimide and photo acryl. We investigated trasfer and output characteristics of the thin film transistors having active layer of pentacene. We calculated field effect mobility and on/off ratio from transfer characteristics of pentacene thin film transistor, and measured IR absorption spectrum of polymide used as the gate dielectric layer. It was found that using the photo acryl as a gate insulator, threshold voltage decreased from -12.5 V to -7 V, field effect mobility increased from 0.012 $cm^2V^{-1}s^{-1}$ to 0.039 $cm^2V^{-1}s^{-1}$ , and on/off current ratio increased from $10^5\;to\;10^6$. It seems that TFTs using photo acryl gate insulator is apt to form channel than TFTs using polyimide gate insulator.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.558-562
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• 2006

We have synthesized a new p-type polymer, poly(9,9'-n-dioctylfluorene-alt-phenoxazine) (PFPO), via the palladium catalyzed coupling reaction. The number average molecular weight ($M_n$) of PFPO was found to be 23,000. PFPO dissolves in common organic solvents such as chloroform and toluene. The UV-visible absorption maximum of the PFPO thin film is clearly blue-shifted with respect to that of F8T2, poly-(9,9'-n-dioctylfluorene-alt-bithiophene). The introduction of the phenoxazine moiety into the polymer system results in better field-effect transistor (FET) performance than that of F8T2. A solution processed PFPO TFT device with a top contact geometry was found to exhibit a hole mobility of $2.7{\times}10^{-4}cm^2/Vs$ and a low threshold voltage of -2 V with high on/off ratio(${\sim}10^4$).

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.210.2-210.2
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• 2015

유기 박막 트랜지스터(Organic Thin Film Transistor, OTFT)기반의 바이오센서는 저비용 제작 및 플렉서블 소자 제작이 가능하여 많은 주목을 받아오고 있다. 본 연구에서는, hexamethyldisilazane (HMDS) 표면 처리된 $Si/SiO_2$ 기판 위에 진공 증착 공정을 이용하여 pentacene 기반의 OTFT를 제작한 후, 수용성 매체에 대한 안정성을 향상시키기 위하여 저분자 물질인 tetratetracontane (TTC)를 진공 증착 공정을 이용하여 증착하였으며, cyclized perfluoropolymer (CYTOP)을 용액 공정으로 코팅하여 bilayer의 passivation 층을 형성하였다. 실제 제작된 OTFT의 수용성 매체에 대한 안정성을 테스트하기 위하여 소자에 수용성 phosphate buffered saline (PBS)용액을 투하하여 10분에 걸쳐 1분 간격으로 transistor의 transfer 특성을 측정하였다. 또한 측정된 $I_d-V_g$ 곡선 데이터를 이용하여 시간에 따른 드레인 전류, 이동도, 문턱 전압, 점멸비 등의 수치를 산출하였다. 그리고, 그 $I_d-V_g$ 곡선 데이터와 산출된 데이터들을 증류수가 투하된 OTFT 소자의 $I_d-V_g$ 곡선 데이터와 산출된 데이터들과 비교하였다. 결론적으로, TTC/Cytop bilayer passivation 층이 형성된 OTFT 소자는 인체 내 혈액의 pH와 유사한 PBS 용액 하에서도 안정적인 구동 성능을 보여 바이오센서로 응용될 수 있는 가능성이 있다는 결론을 얻었다.