Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Chemical Reaction of Pentacene Growth on Hybrid Type Insulator by Annealing Temperature

하이브리드 타입 절연막 위에서 열처리 온도에 따른 펜타센 생성과 관련된 화학반응

  • Oh Teresa (School of Electronic and Information Engineering, Chongju University)
  • Published : 2006.02.01
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Abstract

Pentacene channel for organic thin film transistor was deposited on the SiOC film by thermal evaporation. The growth of pentacene is related with the Diels-Alder reaction and the nucleophilic reaction by the thermal induction. The surface is an important factor to control the recursive Diels-Alder reaction for growing of pentacene on SiOC far The terminal C=C double bond of pentacene molecule was broken easily as a result of attack of the nucleophilic reagents on the surface of SiOC film. The nucleophilic reaction can be accelerated by increasing temperature on surface, and it maks pentacene to grow hardly on the SiOC film with a flow rate ratio of $O_2/(BTMSM+O_2)=0.5$ due to its inorganic property. The nucleophlic reaction mechanism is $SN_2(bimolecular nucleophilic substitution)$ type.

Pentacene channel PTFT(organic thin film transistor)을 SiOC 절연박막 위에서 thermal evaporation 방법을 이용하여 성장시켰다. CVD 방법으로 증착시킨 SiOC 절연막은 조성비에 따라 특성이 달라지므로 절연막 위에서의 펜타센의 화학적 반응을 조사하기 위해서 inorganic-type인 $O_2/(BTMSM+O_2)=0.5$의 비율을 갖는 SiOC 박막을 사용하였다. 펜타센 분자의 말단에서 SiOC 표면에서 Diels-Alder 반응에 의한 이중결합이 깨어지면서 안정된 성장을 하지만 온도가 높아감에 따라 표면에서의 $SN_2(bimolecular nucleophilic substitution)$ 반응과 연쇄적인 화학반응에 의해 .펜타센의 성장을 방해하는 것으로 나타났다.

Keywords

References

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