• 제목/요약/키워드: optoelectronic devices

검색결과 264건 처리시간 0.032초

Bias 전압에 따른 ZnO:Al 투명전도막의 전기적 특성 (Substrate Bias Voltage Dependence of Electrical Properties for ZnO:Al Film by DC Magnetron Sputtering)

  • 박강일;김병섭;임동건;이수호;곽동주
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.738-746
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    • 2004
  • Recently zinc oxide(ZnO) has emerged as one of the most promising transparent conducting films with a strong demand of low cost and high performance optoelectronic devices, ZnO film has many advantages such as high chemical and mechanical stabilities, and abundance in nature. In this paper, in order to obtain the excellent transparent conducting film with low resistivity and high optical transmittance for Plasma Display Pannel(PDP), aluminium doped zinc oxide films were deposited on Corning glass substrate by dc magnetron sputtering method. The effects of the discharge power and doping amounts of $Al_2$$O_3$ on the electrical and optical properties were investigated experimentally. Particularly in order to lower the electrical resistivity, positive and negative bias voltages were applied on the substrate, and the effect of bias voltage on the electrical properties of ZnO:Al thin film were also studied and discussed. Films with lowest resistivity of $4.3 \times 10 ^{-4} \Omega-cm$ and good transmittance of 91.46 % have been achieved for the films deposited at 1 mtorr, $400^{\circ}C$, 40 W, Al content of 2 wt% with a substrate bias of +30 V for about 800 nm in film thickness.

III-V 광소자 제작을 위한 ITO/n+lnP 옴 접촉 특성연구 (Formation of ITO Ohmic Contact to ITO/n+lnP for III-V Optoelectronic Devices)

  • 황용한;한교용
    • 한국전기전자재료학회논문지
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    • 제15권5호
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    • pp.449-454
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    • 2002
  • The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.

RF 파워 변화에 따른 IGZO 박막의 구조적, 광학적, 전기적 특성 (Structural, Optical, and Electrical Properties of IGZO Thin Film Sputtered with Various RF Powers)

  • 진창현;김홍배
    • 한국전기전자재료학회논문지
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    • 제28권10호
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    • pp.620-624
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    • 2015
  • We have studied structural, optical and electrical properties of In-Ga-doped ZnO (IGZO) thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 30, 50, 70, and 90 W respectively. All of the IGZO thin films transmittance in the visible range (400 nm ~ 800 nm) was above 83%. XRD analysis showed the IGZO thin films amorphous structure of the thin films without any peak. And also IGZO thin film have low resistivity ($1.99{\times}10^{-3}{\Omega}cm$), high carrier concentration ($6.4{\times}10^{20}cm^{-3}$), and mobility ($10.3cm^2V^{-1}s^{-1}$). By the studies we found that IGZO transparent thin film can be used as optoelectronic material and introduced application possibility for future electronic devices.

키워드 매핑 기반 2차원 물질 연구 영역 탐지와 발전 과정 분석 (Identification of Research Areas and Evolution of 2D Materials by the Keyword Mapping Methodology)

  • 안세정;이준영
    • 한국전기전자재료학회논문지
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    • 제31권1호
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    • pp.11-18
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    • 2018
  • Two-dimensional (2D) materials such as transition metal dichalcogenides have attracted tremendous scientific interests owing to their potential of solving the zero band-gap issue of graphene. In this work, the research areas and technology evolutionary dynamics of the 2D materials were identified using the scientometric method focusing on keyword mapping and clustering. The time-series analysis showed that the technological progress of 2D material is in the early growth period. The overlay mapping analysis were carried out to investigate the technology evolution of 2D materials with time. The strategic diagram of co-word analysis classifying the topological positions of keyword was derived to support the analysis results. It is conjectured that extensive research will be conducted widely on the application of 2D materials not only in electronic and optoelectronic devices, but also in various other fields such as biomedical applications, and that their development will be more rapid based on accumulated results of extant graphene research.

ZnO:Al투명전도막의 전기적 특성에 미치는 Bias 전압의 영향 (Effect of substrate bias on electrical properties of ZnO:Al transparent conducting film)

  • 박강일;김병섭;임동건;이수호;곽동주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
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    • pp.408-411
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    • 2003
  • Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure, discharge power and doping amounts of Al on the electrical, optical and morphological properties were investigated experimentally. The effect of bias voltage on the electrical properties of ZnO thin film were also studied. Films with lowest resistivity of $5.4{\times}10^{-4}\;{\Omega}-cm$ have been achieved in case of films deposited at 1mtorr, $400^{\circ}C$ with a substrate bias of +10V for 840nm in film thickness.

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고주파 마그네트론 스퍼터링에 의해 성막된 TiO2가 도핑된 ZnO 박막의 전기적 및 광학적 특성 (Electrical and Optical properties of TiO2-doped ZnO Films prepared on PEN by RF-magnetron Sputtering Method)

  • 김화민;손선영
    • 한국전기전자재료학회논문지
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    • 제22권10호
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    • pp.837-843
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    • 2009
  • $TiO_2$(2 wt.%)-doped ZnO(TZO) films with thickness from 100 nm to 500 nm were prepared on polyethylene naphthalate(PEN) substrate under various rf-power range from 40 W to 80 W. Their electrical and optical properties were investigated as a function of rf-power. We think that these properties were closely related with the crystallization and the film density of TZO films. It was also presumed that the vaporization of the water vapor and other adsorbed particles such as an organic solvents can affect the electrical properties of the conventional transparent conductive oxide(TCO) films. On the other hand, since the TZO film deposited on glass substrate at room temperature with rf-power of 80 W shows a very low resistivity of $7.5\times10^{-4}\;\Omega{\cdot}cm$ and a very excellent transmittance over an average 85% in the visible range, that is comparable to that of ITO films. Therefore, we expect that the TZO films can be used as transparent electrode for optoelectronic devices such as touch-panels, flat-panel displays, and thin-film solar cells.

Optical properties of a-plane InGaN/GaN multi-quantum wells with green emission

  • Song, Hoo-Young;Kim, Eun-Kyu;Lee, Sung-Ho;Hwang, Sung-Min
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.172-172
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    • 2010
  • In the area of optoelectronic devices based on GaN and related ternary compounds, the two-dimensional system like as quantum wells (QWs) has been investigated as an effective structure for improving the light-emitting efficiency. Generally, the quantum well active regions in III-nitride light-emitting diodes grown on conventional c-plane sapphire substrates have critical problems given by the quantum confined Stark effect (QCSE) due to the effects of strong piezoelectric and spontaneous polarizations. However, the QWs grown on nonpolar templates are free from the QCSE since the polar-axis lies within the growth plane of the template. Also the unique characteristic of linear polarized light emission from nonpolar QW structures is attracting attentions because it is proper to the application of back-light units of liquid crystal display. In this study, we characterized optical properties of the a-plane InGaN/GaN QW structures by temperature-dependent photoluminescence (TDPL) measurements. From the photoluminescence (PL) spectrum measured at 300 K, green emission centered at 520 nm was observed for the QW region. Since indium incorporation on nonpolar QWs is lower than that on c-plane, this high indium-doping on a-plane InGaN QWs is not common. Therefore, the effect of high indium composition on optical properties in a-plane InGaN QWs will be extensively studied.

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공액성 소중합체를 이용한 유기 박막 트랜지스터 제작 및 특성에 관한 연구 (A Fabrication and Characterization of Organic Thin Film Transistor Using Conjugated Oligomers)

  • 김옥병;김덕영;김영관;손병청;김정수
    • 한국응용과학기술학회지
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    • 제16권4호
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    • pp.313-316
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    • 1999
  • Organic semiconductors based on conjugated thiophene oligomer have great potential to be utilized as an active layer for electronic and optoelectronic devices. In this study, a conjugated oligomer such as ${\alpha}$-sexithiophene (${\alpha}$-6T) thin films was prepared by the Organic Molecular Beam Deposition (OMBD), and various electrode materials were also deposited by a simple vacuum evaporation, respectively. Those films were photolithographically patterned for the electrical measurements. Electrical charact-erization of the thin film transistor with various channel length were executed and the field effect mobility of these thin film transistors were also calculated by the formula using the experimental data.

RF 마그네트론 스퍼터법에 의한 ZnO:Al 투명전도막 특성에 미치는 방전전력의 영향 (Effect of discharge power on the electrical properties of ZnO:Al transparent conducting films by RF magnetron sputtering)

  • 이성욱;김병섭;이수호;임동건;박민우;이세종;곽동주
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.2
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    • pp.939-942
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    • 2004
  • Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, liquid crystal display, plasma display panel, thermal heater, and other sensors were Prepared by using the capacitively coupled RF magnetron sputtering method. In this paper the effect of RF discharge power on the electrical, optical and structural properties were investigated experimentally. The results show that the structural and electrical properties of the film are highly affected by the variation of RF discharge power. The optimum growth conditions were obtained for films doped with 2 wt% of $Al_2O_3$ and 200 W in RF discharge power, which exhibit a resistivity of $10.4{\times}10^{-4}{\Omega}-cm$ associated with a transmittance of 89.66 % for 1000nm in films thickness in the wavelength range of the visible spectrum.

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Structural, morphological, optical, and photosensing properties of Cs2TeI6 thin film synthesized by two-step dry process

  • Hoat, Phung Dinh;Van Khoe, Vo;Bae, Sung-Hoon;Lim, Hyo-Jun;Hung, Pham Tien;Heo, Young-Woo
    • 센서학회지
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    • 제30권5호
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    • pp.279-285
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    • 2021
  • Recently, cesium tellurium iodine (Cs2TeI6) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs2TeI6 thin films by a two-step dry process. A Cs2TeI6-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs2TeI6 film in optoelectronics.