• Transactions of the Society of Information Storage Systems
• /
• v.1 no.1
• /
• pp.73-77
• /
• 2005

In this paper, a new silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been firstly developed to improve the uniformity of the initial bending and the mechanical stability of the cantilever array for thermo-piezoelectric SPM(scanning probe microscopy) -based data storages. This nitride cantilever shows thickness uniformity less than $2\%$. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. For high speed operation, 128${\times}$128 probe array was developed.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.5 no.1
• /
• pp.24-29
• /
• 2005

Silicon nitride cantilevers integrated with silicon heaters and piezoelectric sensors were developed for the scanning probe microscope (SPM) based data storage application. These nitride cantilevers are expected to have better mechanical stability and uniformity of initial bending than the previously developed silicon cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film and the sensitivity of the piezoelectric sensor was 0.615 fC/nm, meaning that indentations less than 20 nm in depth can be detected. For high speed operation, $128{\times}128$ cantilever array was developed.

• 정보저장시스템학회:학술대회논문집
• /
• 2005.10a
• /
• pp.22-25
• /
• 2005

In this research, a wafar-level transfer method of cantilever array on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• Transactions of the Society of Information Storage Systems
• /
• v.2 no.2
• /
• pp.96-99
• /
• 2006

In this research, a wafer-level transfer method of cantilever away on a conventional CMOS circuit has been developed for high density probe-based data storage. The transferred cantilevers were silicon nitride ($Si_3N_4$) cantilevers integrated with poly silicon heaters and piezoelectric sensors, called thermo-piezoelectric $Si_3N_4$ cantilevers. In this process, we did not use a SOI wafer but a conventional p-type wafer for the fabrication of the thermo-piezoelectric $Si_3N_4$ cantilever arrays. Furthermore, we have developed a very simple transfer process, requiring only one step of cantilever transfer process for the integration of the CMOS wafer and cantilevers. Using this process, we have fabricated a single thermo-piezoelectric $Si_3N_4$ cantilever, and recorded 65nm data bits on a PMMA film and confirmed a charge signal at 5nm of cantilever deflection. And we have successfully applied this method to transfer 34 by 34 thermo-piezoelectric $Si_3N_4$ cantilever arrays on a CMOS wafer. We obtained reading signals from one of the cantilevers.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.6 no.4
• /
• pp.293-298
• /
• 2006

Thermopiezoelectric method, using poly silicon heater and a piezoelectric sensor, was proposed for writing and reading in a probe based data storage system. Resistively heated tip writes data bits while scanning over a polymer media and piezoelectric sensor reads data bits from the self-generated charges induced by the deflection of the cantilever. 34${\times}$34 array of thermopiezoelectric nitride cantilevers were fabricated by a single step wafer level transfer method. We analyzed the noise level of the charge amplifier and measured the noise signal. With the sensor and the charge amplifier 20mn of deflection could be detected at a frequency of 10KHz. Reading signal was obtained from the cantilever array and the sensitivity was calculated.

• Journal of IKEEE
• /
• v.19 no.1
• /
• pp.52-57
• /
• 2015

The disease diagnosis system has been developed using the thin nitride(Si3N4) cantilever arrays which can measure the difference of capacitances between sensor and reference. The system consists of 32-bits RISC(Reduced Instruction Set Computer), RAM/Flash, bus, communication IP's, ADC(Analog Digital Converter) board, and LCD display. The marker selection method, which give us the good accuracy from reasonal numbers of markers, is suggested. The developed system has the resolution under 1fF and can detect 10nM concentration of Thrombin.

• Proceedings of the KIEE Conference
• /
• 2001.07c
• /
• pp.1893-1895
• /
• 2001

In this paper, novel release technique using wet etch is proposed. The results of this technique and the results of SAMs (Self-Assembled monolayers) coated after release using this technique are compared. Fabricated structure have 100 um in width and experimental length is from 100 um to 1 mm. Thickness of aluminum sacrificial layer is 2 um and structure thickness is 2.5 um. Cantilevers and bridges are fabricated with electroplated gold and silicon nitride deposited on substrate. An aluminium sacrificial layer was evaporated thermally and removed in various wet etching solutions. Detachment length of cantilever is 200 um and detachment length of bridge is 1 mm after isooctane rinsing. And the SAMs coating condition which is appropriate for gold and nitride are studied respectively.

• Transactions of the Society of Information Storage Systems
• /
• v.3 no.1
• /
• pp.47-53
• /
• 2007

In this paper, a thermo-piezoelectric mechanism with integrated heaters and piezoelectric sensors has been studied for low power probe-based data storage. Silicon nitride cantilever integrated with silicon heater and piezoelectric sensor has been developed to improve the uniformity of cantilevers. Data bits of 40 nm in diameter were recorded on PMMA film. The sensitivity of the piezoelectric sensor was 0.615 fC/nm after poling the PZT layer. And, the $34\times34$ probe array integrated with CMOS circuits has been successfully developed by simple one-step bonding process. The process can simplify the process step and reduce tip wear using silicon nitride tip.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.49 no.9
• /
• pp.495-501
• /
• 2000

This paper presents a method to minimize the initial deflection of a multi-layer piezoelectric microactuator without loosing its piezoelectric deflection performance required for light modulating micromirror devices. The multi-layer piezoelectric actuator composed of PZT silicon nitride and platinum layers deflects or buckles due to the gradient of residual stress. Based on the structural analysis results and relationship between process conditions and mechanical properties we have modified the fabrication process and the thickness of thin film layers to reduce the initial residual stress deflection without decreasing its piezoelectric deflection performance. The modified designs fabricated by surface-micromachining process achieved the 77% reduction of the initial deflection compared with that of the conventional method based on the measured micromechanical material properties is applicable to the design refinement of multi-layer MEMS devices and micromechanical structures.

• Clean Technology
• /
• v.18 no.3
• /
• pp.280-286
• /
• 2012

The dry etching of sacrificial $SiO_2$ was performed in supercritical carbon dioxide. The etching of boron phosphor silica glass (BPSG), tetraethyl orthosilicate (TEOS), thermal $SiO_2$, and Si-nitride (SiN) was investigated by using a two chamber system with HF/py etchant and alcohol additives. The etch rate of sacrificial $SiO_2$ increased upon the addition of methanol. The etch selectivity of BPSG with respect to SiN was highest with IPA although the highest etch rate was resulted from methanol except BPSG. The etch rate increased with the temperature in HF/py/MeOH system. Especially the increase of the etch rate was much higher for BPSG with an increase in the reaction temperature. The etch residue was not reduced apparently upon the addition of alcohol cosolvents to HF/py. While the etch rate in HF/$H_2O$ was higher than HF/py/alcohol system, the rate decreased with the addition of alcohols to HF/$H_2O$. The cantilever beam structure of high aspect ratios was released by the dry ething in supercritical carbon dioxide without damage.