• Journal of the Korean Institute of Telematics and Electronics
• /
• v.21 no.4
• /
• pp.13-16
• /
• 1984

This paper proposes a new layout algorithm in order to minimize chip area in one dimensional MOS - LSI composed of basic cells, such as NAND or NOR gates. The virtval gates are constructed, which represent I/O of signal lines at the left-most and at the right-most side of the MCS gate array. With this, a heuristic algorithm is realized that can minimize the number of straight connectors passing through each gate, and as the result, minimize the horizontal tracks necessary to route. The usefulness of the algorithm proposed is shown by the execution of the experimental program on practical logic circuits.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.1 s.343
• /
• pp.13-16
• /
• 2006

We have proposed and experimentally demonstrated the all-optical composite logic gates with XOR, NOR, OR and NAND functions using SOA-MZI structures to make it possible to simultaneously perform various logical functions. The proposed scheme is robust and feasible for high speed all-optical logic operation with high ER.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.15 no.2
• /
• pp.286-291
• /
• 2015

For highly scalable NAND flash memory applications, a compact ($4F^2/cell$) nonvolatile memory architecture is proposed and investigated via three-dimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.

• Journal of IKEEE
• /
• v.26 no.2
• /
• pp.329-332
• /
• 2022

In this paper, retention characteristics of lateral charge migration according to parameters of 3D NAND flash memory to which ferroelectric (HfO₂) structure is applied and ∆V_th were analyzed. The larger the P_s, the greater maximum polarization possible in ferroelectric during Programming. Therefore, the initial V_th increases by about 1.04V difference at P_s 70µC/cm² than at P_s 25µC/cm². Also, electrons trapped after the Program operation causes lateral charge migration over time. Since ferroelectric maintains polarization without applying voltage to the gate after Programming, regardless of P_s value, polarization increases as P_r increases and the ∆V_th due to lateral charge migration becomes smaller by about 1.54V difference at P_r 50µC/cm² than P_r 5µC/cm².

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.22 no.1
• /
• pp.7-11
• /
• 2009

In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are 2.0 nm for the tunnel oxide, 1.4 nm for the nitride layer, and 4.9 nm for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.59 no.6
• /
• pp.1095-1102
• /
• 2010

This paper presents an equalizer reducing CCI(cell-to-cell interference) in MLC NAND flash memory. High growth of the flash memory market has been driven by two combined technological efforts that are an aggressive scaling technique which doubles the memory density every year and the introduction of MLC(multi level cell) technology. Therefore, the CCI is a critical factor which affects occurring data errors in cells. We introduced an equation of CCI model and designed an equalizer reducing CCI based on the proposed equation. In the model, we have been considered the floating gate capacitance coupling effect, the direct field effect, and programming methods of the MLC NAND flash memory. Also we design and verify the proposed equalizer using Matlab. As the simulation result, the error correction ratio of the equalizer shows about 20% under 20nm NAND process where the memory channel model has serious CCI.

• Journal of the Microelectronics and Packaging Society
• /
• v.24 no.3
• /
• pp.47-52
• /
• 2017

This research scrutinizes the data retention characteristics of the MLC NAND Flash Memory instigated by the loss effect of trapped charge when the memory is in the state of program saturation. It is attributed to the threshold voltage saturation phenomenon which engenders an interruption to the linear increase of the voltage in the memory cell. This phenomenon is occasioned by the outflow of the trapped charge from the floating gate to the control gate, which has been programmed by the ISPP (Incremental Step Pulse Programming), via Inter-Poly Dielectric (IPD). This study stipulates the significant degradation of thermal retention characteristics of threshold voltage in the saturation region in contrast to the ones in the linear region. Thus the current study evaluates the data retention characteristics of voltage after the program with a repeated reading test in various measurement conditions. The loss effect of trapped charge is found in the IPD layer located between the floating gate and the control gate especially in the nitride layer of the IPD. After the thermal stress, the trapped charge is de-trapped and displays the impediment of the characteristic of reliability. To increase the threshold saturation voltage in the NAND Flash Memory, the storage ability of the charge in the floating gate must be enhanced with a well-thought-out designing of the module in the IPD layer.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.22 no.5
• /
• pp.102-109
• /
• 1985

A new yield maximization procedure by investigating method of the multidimensional Monte Carlo integration is presented. And then maximum yield is obtained by the new modified weight selection algorithm applied to objective function of MOSFET NAND GATE Also this yield maximization procedure can be applied to nonconvex objective function.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.3
• /
• pp.246-254
• /
• 2022

Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.48 no.10
• /
• pp.46-53
• /
• 2011

This paper presents an equalizer reducing CCI(cell-to-cell interference) in MLC NAND flash memory. The CCI is a critical factor which affects occurring data errors in a cell, when surrounding cells are programed. We derived a characteristic equation for CCI considering write procedure of data that is similar with signal equalizing. The model considers the floating gate capacitance coupling effect, the direct field effect, and programming methods of the MLC NAND flash memory. We verify the proposed equalizer comparing with the measured data of 1-block MLC NAND flash memory. As the simulation result, the equalizer shows an error correction ratio about 60% under 20nm NAND process.