Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The Characteristics of p-channel SONOS Transistor for the NAND Charge-trap Flash Memory

NAND 전하트랩 플래시메모리를 위한 p채널 SONOS 트랜지스터의 특성

  • 김병철 (진주산업대학교 전자공학과) ;
  • 김주연 (울산과학대학 반도체응용)
  • Published : 2009.01.01
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Abstract

In this study, p-channel silicon-oxide-nitride-oxide-silicon(SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are 2.0 nm for the tunnel oxide, 1.4 nm for the nitride layer, and 4.9 nm for the blocking oxide. The fabricated SONOS transistors show low programming voltage and fast erase speed. However, the retention and endurance of the devices show poor characteristics.

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References

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