• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.443-447
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• 2009

Bismuth-antimony-telluride based thermoelectric thin film materials were prepared by metal organic vapor phase deposition using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. A planar type thermoelectric device has been fabricated using p-type $Bi_{0.4}Sb_{1.6}Te_3$ and n-type $Bi_{2}Te_{3}$ thin films. Firstly, the p-type thermoelectric element was patterned after growth of $5{\mu}m$ thickness of $Bi_{0.4}Sb_{1.6}Te_3$ layer. Again n-type $Bi_{2}Te_{3}$ film was grown onto the patterned p-type thermoelectric film and n-type strips are formed by using selective chemical etchant for $Bi_{2}Te_{3}$. The top electrical connector was formed by thermally deposited metal film. The generator consists of 20 pairs of p- and n-type legs. We demonstrate complex structures of different conduction types of thermoelectric element on same substrate by two separate runs of MOCVD with etch-stop layer and selective etchant for n-type thermoelectric material. Device performance was evaluated on a number of thermoelectric devices. To demonstrate power generation, one side of the device was heated by heating block and the voltage output was measured. The highest estimated power of 1.3 ${\mu}m$ is obtained at the temperature difference of 45 K.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.332-333
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• 2008

DC magnetron sputtering was used to deposit p-type polycrystalline silicon on n-type Si(100) wafer. The influence of film microstructure properties on deposition parameters (DC power, substrate temperature, pressure) was investigated. The substrate temperature and pressure have the important influence on depositing the poly-Si thin films. Smooth ploy-Si films were obtained in (331) orientation and the average grain sizes are ranged in 25-30nm. The grain sizes of films deposited at low pressure of 10mTorr are a little larger than those deposited at high pressure of 15mTorr.

• Korean Journal of Crystallography
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• v.12 no.3
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• pp.171-176
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• 2001

HgCdTe films were grown on the (100). (111), (211) CdZnTe, and (100) GaAs substrates by metal organic chemical vapor epitaxy. We have investigated the surface morphology, electrical properties, crystalline qualities, and composition of HgCdTe with substrates orientation. Three dimensional facet growth was occurred on (111) CdZnTe substrate. The crystalline quality of HgCdTe on (100) CdZnTe was superior to that of HgCdTe on (100) GaAs. FWHM values of double crystal x-ray diffraction of HgCdTe on (100) CdZnTe and (100) GaAs were 55 and 125arcsec, respectively. HgCdTe on GaAs substrate showed n-type conductivity with high mobility, however, HgCdTe on CdZnTe showed p-type conductivity with carrier concentration of higher than 10/sup 16/㎤.

• Journal of Sensor Science and Technology
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• v.18 no.2
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• pp.147-153
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• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.33 no.6
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• pp.203-211
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• 1984

MOS silicon solar cells have been developed using the fixed (interface) charge inherent to thermally oxidized silicon to induce an n-type inversion layer in 1-10 ohm-cm p-type silicon. Higher collection efficiencies are predicted than for diffused junction cells. Without special precautions a conversion efficiency of 14.2% is obtained. A MOS silicon solar cell is described in which an inversion layer forms the active area which is then contacted by means of a MOS grid. The highest efficiency is obtained when the resistivity of the substrate is high.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.411-415
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• 1987

A $32{\times}33$ MOS-type area image sensor has been fabricated. The blooming current is reduced to 1/14 by forming +p photocell in P-well instead of a simple p-type substrate. A shallow n+ junction is made to improve the sensitivity of photodiode on short wavelength. Bootstrapping circuit technique is applied to obtain high speed dynamic shift register. The shift register operates at up to 10MHz for 7V clock.

• Korean Journal of Materials Research
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• v.29 no.3
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• pp.196-203
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• 2019

We report on the fabrication and characterization of an oxide photoanode with a zinc oxide (ZnO) nanorod array embedded in cuprous oxide ($Cu_2O$) thin film, namely a $ZnO/Cu_2O$ oxide p-n heterostructure photoanode, for enhanced efficiency of visible light driven photoelectrochemical (PEC) water splitting. A vertically oriented n-type ZnO nanorod array is first prepared on an indium-tin-oxide-coated glass substrate via a seed-mediated hydrothermal synthesis method and then a p-type $Cu_2O$ thin film is directly electrodeposited onto the vertically oriented ZnO nanorod array to form an oxide p-n heterostructure. The introduction of $Cu_2O$ layer produces a noticeable enhancement in the visible light absorption. From the observed PEC current density versus voltage (J-V) behavior under visible light illumination, the photoconversion efficiency of this $ZnO/Cu_2O$ p-n heterostructure photoanode is found to reach 0.39 %, which is seven times that of a pristine ZnO nanorod photoanode. In particular, a significant PEC performance is observed even at an applied bias of 0 V vs $Hg/Hg_2Cl_2$, which makes the device self-powered. The observed improvement in the PEC performance is attributed to some synergistic effect of the p-n bilayer heterostructure on the formation of a built-in potential including the light absorption and separation processes of photoinduced charge carriers, which provides a new avenue for preparing efficient photoanodes for PEC water splitting.

• Journal of Sensor Science and Technology
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• v.28 no.6
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• pp.390-394
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• 2019

This paper presents an inkjet-printed plastic force sensor using PEDOT:PSS. Using a piezoelectric-type inkjet printer, the force sensor was manufactured by printing PEDOT:PSS ink onto a polyimide (PI) substrate film. Applying a vertical force of 0 to 100 N to the force sensor on the PI substrate with a thickness of 64 mm, the resistance of the force sensor increased in proportion to the input force by the length deformation of the PI substrates and the sensor pattern. As a result, the fabricated sensor has a characteristic of 0.001% /N with a linearity of 99.38%. In addition, as the thickness of the PI substrate film increased, the sensitivity of the sensor increased linearly. The fabricated force sensor is expected to be applied to industrial sites and healthcare fields.

• Journal of the Korean Society of Food Science and Nutrition
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• v.9 no.1
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• pp.59-73
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• 1980

A detailed procedure was described for the isolation of cratine kinase (ATP-Creatine phosphotransferase, E. C. 2. 7. 3. 2.) from the muscle of the snake Bungarus fasciatus. The original isolation procedure of Kuby et al. for the rabbit muscle enzyme has been modified and extended to include a chromatographic step. The properties of the enzyme have been investigated and kinetic constants for the reverse reactions determined as the followings: 1) A molecular weight of the enzyme was determined by gel filteration on Sephadex G-100 and by electrophoresis on SDS-polyacrylamide was 86,000. 2) Two reactive sulphydryl groups were detected with dithiobis nitrobenzoic acid (DTNB). 3) The nucleotide substrate specificity in the reverse reaction was determined as ADP*2'-dADP＞GDP＞XDP＞UDP with magnesium as the activating metal ion. 4) The order of the metal specificity in the reverse reaction Mg>Mn>$Ca{\sim}Co$ was determined with ADP as substrate. 5) A detailed kinetic analysis was carried out in the reverse direction with $MaADP^-$ as the nucleotide substrate. Initial velocity and product inhibition studies($MaADP^{2-}$ competitive with respect to MgADP- and noncompetitive with respect to $N-phosphorycreatine^{2-}$ ; Creatine competitive with respect to $N-phosphorycreatine^{2-}$ and noncompetitive with respect to Ma $ADP^-)$ indicated that the reaction obeyed a sequential mechanism of the rapid equilibrium random type.

• Archives of Pharmacal Research
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• v.8 no.3
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• pp.149-157
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• 1985

The HCL hydrolyzate of the non-histone protein fractionated from the rat liver nuclei which have been incubated inthe presence of S-adenosyl-L-[methyl-$^{14}C$ ]-methionine shows at least four unidentified radioactive peaks on a basic amino acid analysis chromatogram. One of these unknown compounds (designated as compound 3) is also formed by the rat liver homogenated with the exogenous addition of an appropriate protein substrate. Since boiled rat liver homogenate or fresh homogenate in the absence of an exogenous protein substrate failed to form compound 3, its formation can be considered to be enzyme-catalyzed. The enzyme which yields compound 3 shows a preference of protein substrate in the order of reductively methylated hemoglobin > native > histone type II-A. The rat enzyme is nuclear in location associated with chromatin, and exhibits the highest activity in the liver among various rat organs. A compound 3-forming enzyme is also present in Neurospora crassa, since endogenous formation of the compound 3 can be demonstrated with the crude extract of this mold. The chemical identity of compound 3 is not yet known. However, it resisted to the following treatments; 6 N HCL and 0.1 N Na NaOH hydrolysis at $110^{\circ}C$, OR L-amino acid oxidase.