Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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The microstructure of polycrystalline silicon thin film that fabricated by DC magnetron sputtering

  • Chen, Hao (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering) ;
  • Park, Bok-Kee (Howon Uni.) ;
  • Song, Min-Jong (Kwangju Health Coll.) ;
  • Park, Choon-Bae (Wonkwang Univ. WRISS, School of Electrical Electronic and Information Engineering)
  • Published : 2008.11.06
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Abstract

DC magnetron sputtering was used to deposit p-type polycrystalline silicon on n-type Si(100) wafer. The influence of film microstructure properties on deposition parameters (DC power, substrate temperature, pressure) was investigated. The substrate temperature and pressure have the important influence on depositing the poly-Si thin films. Smooth ploy-Si films were obtained in (331) orientation and the average grain sizes are ranged in 25-30nm. The grain sizes of films deposited at low pressure of 10mTorr are a little larger than those deposited at high pressure of 15mTorr.

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