• 한국결정성장학회지
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• 제17권1호
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• pp.35-40
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• 2007

스컬(skull)용융법에 의해 성장시킨 코발트($Co^{2+}$)가 도핑(doping)된 $25{\sim}50wt%$의 서로 다른 $Y_2O_3$ 함량을 가진 이트리아 안정화 큐빅지르코니아(YSZ) 단결정을 $N_2$ 분위기 $1000^{\circ}C$에서 5시간 동안 열처리하였다. 적갈색의 단결정들은 각각 보라색 또는 청색으로 변화되었으며, Co가 첨가(doping) 된 처리 전 후의 YSZ들은 직경 6.5, 두께 2 mm의 웨이퍼 또는 직경 10 mm의 라운드브릴리언트 컷(round brilliant cut)으로 연하 하였으며, 광학적 또는 구조적 특성은 UV-VIS 분광광도계와 XRD(X-ray diffraction)로 측정하였으며, $Co^{2+}\;(^4A_2(^4F)\to{^4P})$ 및 $Co^{3+}$에 의한 흡수, 에너지 간격(energy gap) 및 격자 매개 변수(lattice parameter)변화가 분석되었다.

• 한국세라믹학회지
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• 제40권5호
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• pp.401-404
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• 2003

LiN $i_{y}$M $n_{2-y}$ $O_4$were synthesized by calcining a mixture of LiOH, Mn $O_2$(CMD), and NiO at 40$0^{\circ}C$ for 10 h and then calcining at 85$0^{\circ}C$ for 48 h in air with intermediate grinding. The voltage vs. discharge capacity curves at a current density 300 $\mu$A/c $m^2$ between 3.5 V and 4.3 V showed two plateaus, but the plateaus became ambiguous as the y value increases. The sample with y=0.02 had the largest first discharge capacity, 118.1 mAh/g. As the value y increases from 0.02 up to 0.2, on the whole, the cycling performance became better. The LiN $i_{0.10}$M $n_{1.90}$ $O_4$sample had a relatively large first discharge capacity 95.0 mAh/g and showed an excellent cycling performance. The samples with larger lattice parameter have, in general, larger discharge capacities. The reduction curves in the cyclic voltammograms for the y=0.05-0.20 samples exhibit three peak showing that the reduction may proceed in three stages in these samples. For the samples with relatively large discharge capacity, the lattice destruction induced by strain causes the capacity fading of LiN $i_{y}$M $n_{2-y}$ $O_4$ with cycling.cling.ing.

• Journal of applied mathematics & informatics
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• 제14권1_2호
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• pp.137-155
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• 2004

Fuzzification of a fantastic filter in a lattice implication algebra is considered. Relations among a fuzzy filter, a fuzzy fantastic filter, and fuzzy positive implicative filter are stated. Conditions for a fuzzy filter to be a fuzzy fantastic filter are given. Using the notion of level set, a characterization of a fuzzy fantastic filter is considered. Extension property for fuzzy fantastic filters is established. The notion of normal/maximal fuzzy fantastic filters and complete fuzzy fantastic filters is introduced, and some related properties are investigated.

• Journal of applied mathematics & informatics
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• 제37권5_6호
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• pp.469-480
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• 2019

A generalized tiling is defined as a generalization of the properties of tiling a region of ${\mathbb{Z}}^2$ with dominoes, and comprises tiling with rhombus and any other tilings that admits height functions which can be ordered into a distributive lattice. By using properties of the distributive lattice, we prove that the Markov chain consisting of moving from one height function to the next by a flip is fast mixing and the mixing time ${\tau}({\epsilon})$ is given by ${\tau}({\epsilon}){\leq}(kmn)^3(mn\;{\ln}\;k+{\ln}\;{\epsilon}^{-1})$, where mn is the area of the grid ${\Gamma}$ that is a k-regular polycell. This result generalizes the result of the authors (T-tetromino tiling Markov chain is fast mixing, Theor. Comp. Sci. (2018)) and improves on the mixing time obtained by using coupling arguments by N. Destainville and by M. Luby, D. Randall, A. Sinclair.

• 한국결정성장학회지
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• 제30권1호
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• pp.1-6
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• 2020

본 연구에서는 패턴화된 사파이어 기판 위에 HVPE(Hydride Vapor Phase Epitaxy System) 법에 의해 50 nm 두께의 AlN thin film을 증착한 뒤, 에피층 구조가 MO CVD에서 성장되었다. AlN 버퍼층 박막의 표면형상이 SEM, AFM에 의해서, 에피층 구조의 GaN 박막의 결정성은 X-선 rocking curve에 의해 분석되었다. 패턴화된 사파이어 기판 위에 증착된 GaN 박막은, 사파이어 기판 위에 증착된 GaN 박막의 경우보다 XRD 피크 세기가 다소 높은 결과를 나타냈다. AFM 표면 형상에서 사파이어 기판 위에 AlN 박막이 증착된 경우, GaN 에피층 박막의 p-side 쪽의 v-pit 밀도가 상대적으로 낮았으며, 결함밀도가 낮게 관찰되었다. 또한, AlN 버퍼층이 증착된 에피층 구조는 AlN 박막이 없는 에피층의 광출력에 비해 높은 값을 나타냈다.

• 한국분말재료학회지
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• 제27권5호
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• pp.406-413
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• 2020

Ti_0.5Al_0.5N/CrN nano-multilayers, which are known to exhibit excellent wear resistances, were prepared using the unbalanced magnetron sputter for various periods of 2-7 nm. Ti_0.5Al_0.5N and CrN comprised a cubic structure in a single layer with different lattice parameters; however, Ti_0.5Al_0.5N/CrN exhibited a cubic structure with the same lattice parameters that formed the superlattice in the nano-multilayers. The Ti_0.5Al_0.5/CrN multilayer with a period of 5.0 nm exceeded the hardness of the Ti_0.5Al_0.5N/CrN single layer, attaining a value of 36 GPa. According to the low-angle X-ray diffraction, the Ti_0.5Al_0.5N/CrN multilayer maintained its as-coated structure up to 700℃ and exhibited a hardness of 32 GPa. The thickness of the oxidation layer of the Ti_0.5Al_0.5N/CrN multilayered coating was less than 25% of that of the single layers. Thus, the Ti_0.5Al_0.5N/CrN multilayered coating was superior in terms of hardness and oxidation resistance as compared to its constituent single layers.

• Bulletin of the Korean Chemical Society
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• 제11권2호
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• pp.85-88
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• 1990

The electron paramagnetic resonance (EPR) spectrum of the copper (II) complex with the 2-methylamino-1-cyclo-pentene-1-dithiocarboxylate (acdc) anion, $Cu(N-CH_3acdc)_2$ has been studied in the diamagnetic host lattices afforded by the corresponding divalent nickel, zinc, cadmium and mercury complexes. EPR parameters of the complex support the exclusive use of sulfur atoms by the ligand in metal binding. A combination of host lattice structure and covalency effects can be account for the observed spin-Hamiltonian parameters.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.13-17
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• 2002

Ga$_2$O$_3$ nanomaterials were synthesized from mechanically ground GaN powders with thermal annealing Ga$_2$O$_3$ nanobelts were farmed in a nitrogen atmosphere, while Ga$_2$O$_3$ nanoparticles were formed inan oxygen atmosphere. The structural properties of the Ga$_2$O$_3$ nanomaterials were investigated by X-ray diffractometer (XRD) and high-resolution transmission eleotron microscope (HRTEM). The study of field emission scanning electron microscopy (FESEM) on the microstructures of nanomaterials revealed that the nanobelts are with the range of about 10∼200nm width and 10∼50nm thickness, and that nanoparticles are with the range of about 20∼50nm radius. On the basis of XRD and HRTEM data, we determined that the nanobelts grow toward a direction perpendicular to the (010) lattice plane and that they are enclosed by facets of the (10T) and (101) lattice planes. The formation of the nanobelts may be described by the vapor-solid(VS) mechanism, and the supersaturation device of gaseous phase may play an important role in the formation of Ga$_2$O$_3$ nanomaterials.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.359-360
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• 2013

The effect of electrode and deposition methods on non-linear interfacial resistive switching in HfO2 based $250{\times}250$ nm2 cross-point device was studied. HfO2 based device has the interfacial resistive switching properties of non-linearity and self-compliance current switching. The operating current in HfO2 based device was increased with negatively increasing the heat of formation energy in top electrode. Also, it was investigated that the operating current in HfO2 based device was changed with deposition methods of O3 reactant ALD, H2O reactant ALD and dc reactive sputtering, resulting the magnitude of the operating current and on/off ratio in order of HfO2 films deposited by dc reactive sputtering, H2O reactant ALD, and O3 reactant ALD. To investigate the effect of electrode and deposition methods on operating current of non-linear interfacial resistive switching in the cross-point device, X-ray photoelectron spectroscopy was measured. Through the analysis of O 1s spectra, non-lattice oxygen concentration, which is closely related to oxygen vacancies, was increased in order of Pt, TiN, and Ti top electrodes and in order of O3 reactant ALD, H2O reactant ALD, and O3 reactant ALD, and dc reactive sputtering deposition method. From all results, non-lattice oxygen concentration in ultra-thin HfO2 films play a crucial role in the operating current and memory states (LRS & HRS) in the non-linear interfacial resistive switching.

• Bulletin of the Korean Chemical Society
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• 제11권5호
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• pp.379-383
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• 1990

$YBa_2Cu_{3-x}Ni_xO_{7-{\delta}}$, with x = 0.05, 0.2, 0.4, 0.7 and 1.0 had been prepared by the thermal decomposition of corresponding nitrates. Among them, the sample with x = 0.05 shows above-liquid-$N_2$ temperature superconductivity with $T_c$ of 88.7K. According to the X-ray diffraction analysis, its crystal symmetry was estimated as orthorhombic with the lattice parameters of a = 3.866${\AA}$, b = 3.893${\AA}$, c = 11.715${\AA}$. The chemical composition of the sample was determined by electron probe microanalysis and the chemical composition around its grain boundaries was carefully studied by the X-ray line scanning technique. From the observed binding energy of Ni-$2p_{3/2}$ orbital electron (B.E. = 853 eV) measured by X-ray photoelectron spectroscopy, the valency state of nickel stabilized in $YBa_2Cu_{2.95}Ni_{0.05}O_{7-{\delta}}$ oxide lattice could be determined to be Ni(II).