• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.582-585
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• 2001

InSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 200$^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.21-24
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• 2000

lnSb temperature dependent hall effect of multilayerd structures were investigated. According to variation of magnetic field measured hall coefficient, Hall mobility, carrier density and hall voltage. For the measurement of electrical properties of hall device, evaperated InSb thin film fabricated with series and parallel multilayers. We found that the XRD analysis of InSb thin film showed good properties at 20$0^{\circ}C$, 60 minutes. Resistance of ohmic contact increased linearly due to increasing current. Some of device fabrication technique and analysis of Hall effect were discussed.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.117-123
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• 2011

The low electric power and high efficiency chips are required because of the appearance of smart phones. Also, high-capacity memory chips are needed. e-MMC(embedded Multi-Media Card) for this is defined by JEDEC(Joint Electron Device Engineering Council). The e-MMC memory for research and development is a memory mulit-chip module of 64GB using 16-multilayers of 4GB NAND-flash memory. And it has simplified the chip by using SIP technique. But mulit-chip module generates high heat by higher integration. According to the result of study, whenever semiconductor chip is about 10 $^{\circ}C$ higher than the design temperature it makes the life of the chip shorten more than 50%. Therefore, it is required that we solve the problem of heating value and make the efficiency of e-MMC improved. In this study, geometry of 16-multilayered structure is compared the temperature distribution of four different geometries along the numerical analysis. As a result, it is con finned that a multilayer structure of stair type is more efficient than a multilayer structure of vertical type because a multi-layer structure of stair type is about 9 $^{\circ}C$ lower than a multilayer structure of vertical type.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.114.2-114.2
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• 2017

Transparent film heaters (TFHs) based on Joule heating are currently an active research area. However, TFHs based on an indium tin oxide (ITO) monolayer have a number of problems. For example, heating is concentrated in part of the device. Also, heating efficiency is low because it has high sheet resistance ($R_S$). Resistance of indium zinc oxide (IZO) is similar to ITO and it can be used to flexible applications due to its amorphous structure. To solve these problems, our study introduced hybrid layers of IZO/Ag/IZO deposited by magnetron sputtering, and the electrical, optical, and thermal properties were estimated for various thickness of the metal interlayer. It was found that the sheet resistance of the multilayer was mainly dependent on the thickness of the Ag layers. The $R_S$ of IZO(40)/Ag/IZO(40nm) multilayer was 5.33, 3.29, $2.15{\Omega}/{\Box}$ for Ag thickness of 10, 15, and 20nm, respectively, while the $R_S$ of an IZO monolayer(95nm) was $59.58{\Omega}/{\Box}$. The optical transmittance at 550nm for the IZO(95nm) monolayer is 81.6%, and for the IZO(40)/Ag/IZO(40nm) multilayers with Ag thickness 10, 15 and 20nm, is for 72.8, 78.6, and 63.9%, respectively. The defrost test showed that the film with the lowest RS had the highest heat generation rate (HGR) for the same applied voltage. The results indicated that IZO(40)/Ag(15)/IZO(40nm) multilayer has the best suitable property, which is a promising thin film heater for the application in vehicle windshield.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details If the operating principle and secondary effects, and through the application If ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.43-46
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• 2007

Though bottom emission AM-OLED has advantages in respect of mass production, the bottom emission type is underrated due to its low aperture ratio and low color gamut, compared with top emission type. In this paper, we demonstrate that the color gamut up to 89 % can be simply achieved by depositing dielectric multilayers, whose thicknesses are determined using an optical simulation program, prior to formation of Si layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.49-52
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• 2000

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details if the operating principle and secondary effects, and through the application if ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.276-283
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• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

• Biotechnology and Bioprocess Engineering:BBE
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• v.6 no.3
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• pp.183-188
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• 2001

The deposition behavior and photoelectric response characteristics of chlorophyll a(Chl a) monolayers and multilayers were investigated under various film fabrication conditions. Chl a LB films were deposited onto quartz and pretreated ITO glass substrates under several fabrication conditions, including surface pressure and number of layers. The absorption spectra of Chl a in a solution state and solid-like state (LB films) were fairly consistent with each other, and two absorption peaks were found at 678 and 438nm, respectively. The prepared Chl a LB films were set into an electrochemistry cell equipped with a Pt plate as the counter electrode, and the photoelectric response characteristics were obtained and analyzed relative to the light illumination. By considering the resulting photocurrents, the optimal fabrication conditions for Chl a LB films were determined as 20mN/m of surface pressure and 20 layers. The action spectrum of the Chl a LB films was obtained in the visible region, and was found to be in good agreement with the absorption spectrum. The possible application of the proposed system as a constituent of an artificial color recognition device was suggested based on combining with the photoelectric conversion property of another light-sensitive biological pigment.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.209-211
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• 2004

In the Langmuir-Boldgett(LB) technique, a monolayer on the water surface is transferred on to a substrate, which is raised and dipped through the surface, and one can obtain multilayers in which constituent molecules periodically are arranged in layer. The LB technique has attracted considerable interest in the fabrication of electrical and electronic device, e.g.. Many researchers have investigated the electrical properties of monolayer and multiplayer films. Dendrimers represent a new class of synthetic macromolecules sharacterized by a regularly branched treelike structure. Multiple branching yields a large number of chain ends, which distinguishes dendrimers from conventional starlike polymers and microgels. Azobenzene dendrimer is one of the dendritic macromolecules that includes the azo-group which exhibits a photochromic character. Due to the presence of the charge transfer part, the azo-group, and having a rod-shaped structure, these compounds are expected to have the potential interest in electronics and ptoelectronics, especially in nonlinear optics. In the present paper, we give a pressure stimulation into organic thin films and detect the induced displacement current.