Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Magnetic Properties of InSb Hall Devices

InSb 홀소자의 자기적 특성

  • 이우선 (조선대학교 전기제어계측공학부) ;
  • 최권우 (조선대학교 전기제어계측공학부) ;
  • 조준호 (조선대학교 전기제어계측공학부) ;
  • 정용호 (서강정보대학 열냉동과) ;
  • 김상용 (아남반도체) ;
  • 서용진 (대불대학교 전기전자공학부) ;
  • 김남오 (조선이공대 전기과)
  • Published : 2000.11.01
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Abstract

In the current development of magnetic sensors based on the Hall effect, the following two approaches can be distinguished. The first, one tries to build better sensor based on conventional Hall devices. The innovations come through a better understand of the details if the operating principle and secondary effects, and through the application if ever-improving microelectronics technology. In the second approach, one hopes to build better sensors by making use of the Hall effect in active devices, such as magneto-transistors and MAGFET. In this paper, we study magnetic properties of Hall device fabricated with series and parallel multilayers.

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