Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Fabrication and Characteristics of Magnetic Tunneling Transistors using the Amorphous n-Type Si Films

비정질 n형 Si 박막을 이용한 자기터널링 트랜지스터 제작과 특성

  • 이상석 (상지대학교 컴퓨터전자물리학과) ;
  • 이진용 (상지대학교 컴퓨터전자물리학과) ;
  • 황도근 (상지대학교 컴퓨터전자물리학과)
  • Published : 2005.03.01
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Abstract

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

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References

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