• 제목/요약/키워드: multilayer film

검색결과 392건 처리시간 0.021초

$TiN_xO_y/TiN_x$다층 박막을 이용한 고저항 박막 저항체의 특성평가 (Characteristic and Electrical Properties of $TiN_xO_y/TiN_x$ Multilayer Thin Film Resistors with a High Resistance)

  • 박경우;허성기;안준구;윤순길
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 하계학술대회 논문집
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    • pp.19-19
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    • 2009
  • TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

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Passivation of organic light emitting diodes with $Al_2O_3/Ag/Al_2O_3$ multilayer thin films grown by twin target sputtering system

  • Jeong, Jin-A;Kim, Han-Ki
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.420-423
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    • 2008
  • The characteristics of $Al_2O_3/Ag/Al_2O_3$ multilayer passivaton prepared by twin target sputtering (TTS) system for organic light emitting diodes. The $Al_2O_3/Ag/Al_2O_3$ multilayer thin film passivation on a PET substrate had a high transmittance of 86.44 % and low water vapor transmission rate (WVTR) of $0.011\;g/m^2$-day due to the surface plasmon resonance (SPR) effect of Ag interlayer and effective multilayer structure for preventing the intrusion of water vapor. Using synchrotron x-ray scattering and field emission scanning electron microscope (FESEM) examinations, we investigated the growth behavior of Ag layer on the $Al_2O_3$ layer to explain the SPR effect of the Ag layer. This indicates that an $Al_2O_3/Ag/Al_2O_3$ multilayer passivation is a promising thin film passivation scheme for organic based flexible optoelectronics.

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다층박막을 이용한 Ga-doped ZnO 투명전도막의 특성 (The Characteristics of Ga-doped ZnO Transparent Thin Films by using Multilayer)

  • 김봉석;이규일;강현일;이태용;오수영;이종환;송준태
    • 한국전기전자재료학회논문지
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    • 제20권12호
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    • pp.1044-1048
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    • 2007
  • With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

PLD법으로 제작된 Phosphorus를 도핑한 ZnO 박막의 다층 구조 도입에 따른 영향 (The Effects of Phosphorus Doped ZnO Thin Films with Multilayer Structure Prepared by Pulsed Laser Deposition Method)

  • 임성훈;강홍성;김건희;장현우;김재원;이상렬
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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    • pp.127-130
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    • 2005
  • The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

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Layer-by-Layer 자기조립법에 의한 Poly(ethyiene-alt-maleic anhydride)i Poly(4-vinyl pyrtdine) 다층막 제조 (Fabrication of an Alternating Multilayer Film of Poly(ethylene-alt-maleic anhydride) and Poly(4-vinyl pyridine) by Layer-by-Layer Self-Assembly Method)

  • 이준열;홍숙영
    • 폴리머
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    • 제29권4호
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    • pp.392-398
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    • 2005
  • Layer-by-layer(LbL) 흡착에 의한 poly(ethylene-alt-m미? anhydride) (PEMAh)/poly(4-vinyl pyridine) (P4VP) 자기조립 다층박막을 제조하였다. 자기조립 다층막을 이루는 PEMAh/P4VP 두 고분자 사이의 수소 결합과 정전기적 인력이 다층막을 이루는 원동력이라는 것이 푸리에 변환 적외선(FT-IR) 분광분석에 의해서 확인되었다. 다층막의 균일한 자기조립 과정은 PEMAh/P4VP 이중층막의 적층 수 증가에 따른 UV-vis 스펙트럼의 256 nm에서 나타나는 P4VP 특성 흡수 피크의 선형적 증가에 의해서 확인할 수 있었다. 다층막을 이루는 고분자 전해질 담지 용액의 조건 변화가 다층막 형성에 미치는 영향을 살펴보기 위하여 두 고분자 용액의 농도 및 PEMAh 담지용액의 pH를 변화시키면서 다층막을 제조하였다. 다층막의 두께, 흡착된 고분자 전해질 질량 및 표면 거칠기의 변화를 UV-vis 분광 분석, 수정진동자 미량저울(quartz crystal microbalance;QCM) 및 원자 힘 현미경(atomic force microscopy;AFM)을 이용하여 측정하였다.

Size and Aspect Ratio Effects on the Magnetic Properties of a Spin-Valve Multilayer by Computer Simulation

  • Lim, S.H.;Han, S.H.;Shin, K.H.;Kim, H.J.
    • Journal of Magnetics
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    • 제5권3호
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    • pp.90-98
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    • 2000
  • The change in the magnetic properties of a spin-valve multilayer with the structure IrMn (9 m)/CoFe (4 nm)/Cu (2.6 nm)/CoFe (2 nm)/NiEe (6 nm) is investigated as a function of the size and the aspect ratio. At a fixed aspect ratio (the length/width ratio) of 2, the magnetostatic interactions begin to affect the magnetic properties substantially at a spin-valve length of 5 $\mum$, and, at a length of 1 $\mum$, they become even more dominant. In the case of a fixed multilayer size (2.4 $\mum$) which is indicated by the sum of the length and the width, magnetization change occurs by continuous spin-reversal and M-H loops are characterized by no or very small hysteresis at aspect ratios smaller than unity, At aspect ratios greater than unity, magnetization change occurs by spin-flip resulting in squared hysteresis loops. A very large changes in the coercivity and the bias field is observed, and these results are explained by two separate contributions to the total magnetostatic interactions: the coercivity by the self-demagnetizing field and the bias field by the interlayer magnetostatic interaction field.

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Numerical Analysis of Loss Power Properties in the Near-Field Electromagnetic Wave Through A Microstrip Line for Multilayer Magnetic Films with Different Levels of Electrical Conductivity

  • Lee, Jung-Hwan;Kim, Sang-Woo
    • Journal of Magnetics
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    • 제13권3호
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    • pp.92-96
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    • 2008
  • There are few reports of high frequency loss behavior in the near-field for magnetic films with semiconducting properties, even though semiconducting magnetic materials, such as soft magnetic amorphous alloys and nanocrystalline thin films, have been demonstrated. The electromagnetic loss behavior of multilayer magnetic films with semiconducting properties on the microstrip line in quasi-microwave frequency band was analyzed numerically using a commercial finite-element based electromagnetic solver. The large increase in the absorption performance and broadband characteristics of the semiconducting/insulating layer magnetic films examined in this study were attributed to an increase in the loss factor of resistive loss. The electromagnetic reflection increased significantly with increasing conductivity, and the loss power deteriorated significantly. The numerical results of the magnetic field distribution showed that a strong radiated signal on the microstrip line was emitted with increasing conductivity and decreasing film thickness due to re-reflection of the radiated wave from the surface of the magnetic film, even though the emitted levels varied with film thickness.

Experimental and Simulation Study of the Optical Performances of a Wide Grid Polarizer as a Luminance Enhancement Film for LCD Backlight Applications

  • Seo, Jae Seok;Yeom, Tae Eun;Ko, Jae-Hyeon
    • Journal of the Optical Society of Korea
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    • 제16권2호
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    • pp.151-156
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    • 2012
  • Reflective polarizers can be used as luminance enhancement films for LCD backlights via the polarization recycling process. The optical performances of a wire grid polarizer (WGP) as a reflective polarizer adopted in edge-lit backlights were investigated by luminance evaluation and a time-domain simulation technique. The results were compared to those of a commercial dielectric multilayer film. The luminance gain factor of WGP was smaller than that of the multilayer film by 18%. This was attributed to a much larger internal loss of WGP due to light absorption by metal wires. The internal losses of both reflective polarizers and the polarization conversion efficiency of the backlight were obtained numerically based on a phenomenological model. The optical performances of WGP were optimized by using a time-domain simulation technique. The luminance gain increased and was found to become comparable to, but slightly less than the case of the dielectric multilayer film with decreasing line width.

OLED의 Barrier와 Encapsulation을 위한 원자층 증착 기술로 공정된 Al2O3/TiO2/Al2O3 다층 필름 (Characterization of ALD Processed Al2O3/TiO2/Al2O3 Multilayer Films for Encapsulation and Barrier of OLEDs)

  • 이사야;송윤석;김현;류상욱
    • 반도체디스플레이기술학회지
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    • 제16권1호
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    • pp.1-5
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    • 2017
  • Encapsulation of organic based devices is essential issue due to easy deterioration of organic material by water vapor. Thin layer of encapsulation film is required to preserve transparency yet protecting materials in it. Atomic layer deposition(ALD) is a promising solution because of its low temperature deposition and quality of the deposited film. $Al_2O_3$ or $Al_2O_3/TiO_2/Al_2O_3$ multilayer film has shown excellent environmental protection characteristics despite of thin thicknesses of the films. $Al_2O_3/TiO_2/Al_2O_3$ multilayer and 1.5 dyad layer of $Al_2O_3/polymer/Al_2O_3$ deposited by ALD was measured to have water vapor transmittance rate(WVTR) well below the detection limit($5.0{\times}10^{-5}g/m^2day$) of MOCON Aquatran 2 equipment.

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Properties of AZO/Ag/AZO Multilayer Thin Film Deposited on Polyethersulfone Substrate

  • Jung, Yu Sup;Park, Yong Seo;Kim, Kyung Hwan;Lee, Won-Jae
    • Transactions on Electrical and Electronic Materials
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    • 제14권1호
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    • pp.9-11
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    • 2013
  • The AZO/Ag/AZO multilayer films were deposited on polyethersulfone (PES) substrate by using facing target sputtering methods at room temperature. The AZO/Ag/AZO multilayer films with polymer substrate had advantages, such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, the AZO/Ag/AZO multilayer films (50/12/50 nm) demonstrated a sheet resistance of 11 ${\Omega}/{\square}$ and average transmittance of 87% in visible range (wavelength of 380-770 nm). Moreover, the multilayer showed stable mechanical properties compared to the single-layered AZO sample during the bending test due to the existence of the ductile Ag metal layer.