Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.05a
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- Pages.127-130
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- 2005
The Effects of Phosphorus Doped ZnO Thin Films with Multilayer Structure Prepared by Pulsed Laser Deposition Method
PLD법으로 제작된 Phosphorus를 도핑한 ZnO 박막의 다층 구조 도입에 따른 영향
- Lim, Sung-Hoon (Yonsei University) ;
- Kang, Hong-Seong (Yonsei University) ;
- Kim, Gun-Hee (Yonsei University) ;
- Chang, Hyun-Woo (Yonsei University) ;
- Kim, Jea-Won (Yonsei University) ;
- Lee, Sang-Yeol (Yonsei University)
- Published : 2005.05.13
Abstract
The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of