Characteristic and Electrical Properties of $TiN_xO_y/TiN_x$ Multilayer Thin Film Resistors with a High Resistance

$TiN_xO_y/TiN_x$다층 박막을 이용한 고저항 박막 저항체의 특성평가

  • Park, Kyoung-Woo (School of Nano Science and Technology, Chungnam National University) ;
  • Hur, Sung-Gi (School of Nano Science and Technology, Chungnam National University) ;
  • Ahn, Jun-Ku (School of Nano Science and Technology, Chungnam National University) ;
  • Yoon, Soon-Gil (School of Nano Science and Technology, Chungnam National University)
  • 박경우 (충남대학교 나노정보시스템공학과) ;
  • 허성기 (충남대학교 나노정보시스템공학과) ;
  • 안준구 (충남대학교 나노정보시스템공학과) ;
  • 윤순길 (충남대학교 나노정보시스템공학과)
  • Published : 2009.06.18

Abstract

TiNxOy/TiNx multilayer thin films with a high resistance (~ k$Omega$) were deposited on SiO2/Si substrates at room temperature by sputtering. The TiNx thin films show island and smooth surface morphology in samples prepared by dc and rf magnetron sputtering, respectively. TiNxOy/TiNx multilayer has been developed to control temperature coefficient of resistance (TCR) by the incorporation of TiNx layer (positive TCR) inserted into TiNxOy layers(negative TCR). Electrical and structural properties of sputtered TiNxOy/TiNx multilayer films were investigated as a function of annealing temperature. In order to achieve a stable high resistivity, multilayer films were annealed at various temperatures in oxygen ambient. Samples annealed at 700 oC for 1 min exhibit a good TCR value and a stable high resistivity.

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