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The Characteristics of Ga-doped ZnO Transparent Thin Films by using Multilayer

다층박막을 이용한 Ga-doped ZnO 투명전도막의 특성

  • 김봉석 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 이규일 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 강현일 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 이태용 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 오수영 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 이종환 (성균관대학교 정보통신공학과 전자소자응용연구실) ;
  • 송준태 (성균관대학교 정보통신공학과 전자소자응용연구실)
  • Published : 2007.12.01

Abstract

With development of electronic products the demands for miniaturization and weight-lightening have increased until a recent date. Accordingly, The effort to substitute glass substrates was widely made. However, polymer substrates have weak point that substrates were damaged at high temperature. In this paper, we deposited transparent conductive film at low temperature. And we inserted Au thin film between oxide to compensate for deteriorated electrical characteristics. Ga-doped ZnO(GZO) multilayer coatings were deposited on glass substrate by DC sputtering. The optimization of deposition conditions of both AZO and Au layers were performed to obtain better electrical and optical characteristics in advance. We presumed that the properties of multilayer were affected by the deposition process of both GZO and Au layers. The best multilayer coating exhibited the resistivity of $2.72{\times}10^{-3}\;{\Omega}-cm$ and transmittance of 77 %. From these results, we can confirm a possibility of the application as transparent conductive electrodes.

Keywords

References

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