• Analytical Science and Technology
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• v.6 no.2
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• pp.217-223
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• 1993

Thin films of the Au/Cr, Au/Ni/Cr and Au/Pd/Cr systems were deposited on alumina substrates at ambient temperature and $250^{\circ}C$ in a high-vacuum resistance heating evaporator and annealed at $300^{\circ}C$, $450^{\circ}C$ and $600^{\circ}C$ for 1 hour in air, respectively. The film thicknesses of Au, Ni(or pd), and Cr were $1000{\AA}$, $300{\AA}$, and $50{\AA}$, respectively. The substrate temperature during deposition and the post-deposition annealing temperature affected the sheet resistance of thin-films due to the inter-diffusion of each layer. As a result of Auger depth profile analysis, in the Au/Cr system Cr already diffused out to Au surface during deposition at the substrate temperature of $250^{\circ}C$ and Au distribution changed after heat treatment. In the Au/Ni/Cr and Au/Pd/Cr systems, diffusion phenomena of Ni and Pd were found and especially Ni (approximately 45 at.%) diffused out to Au surface and oxidized.

• Journal of the Korean Chemical Society
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• v.42 no.6
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• pp.607-617
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• 1998

Au was dosed on $TiO_2(001)$ film grown epitaxially on Mo(100) surface in about 90 ${\AA}$ thickness. The growth mode of Au, thermal behavior and stability of the Au clusters, and the binding energy shift of Au 4f with the change in the amount of Au loading were studied by Auger Electron Spectroscopy (AES), Temperature Programmed Desorption (TPD) spectroscopy, Ion Scattering Spectroscopy (ISS), and X-ray Photoelectron Spectroscopy (XPS). Au grows three dimensionally on $TiO_2(001)$ film and the average size of Au clusters prepared at low temperature is smaller than those at higher temperature and the size increases with temperature irreversibly. Au clusters on $TiO_2(001)/Mo(100)$ start evaporation at 1000 K. TPD spectra of Au show very asymmetric peaks with the same leading edges irrespective of the amount of Au loading. The temperature at the peak maximum increases with the amount of Au. The desorption energy of Au obtained from the leading edge analysis of the TPD spectra is about 50 kcal/mol. The initial sticking coefficient of Au on $TiO_2(001)$ is constant in the temperature range of 200-600 K. The binding energy of Au 4f for the Au loaded on the film less than 2.0 MLE shifts to higher energy compared with the bulk Au. The shift is +0.3 eV at 0.1 MLE Au amount.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.9-15
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• 2008

Microstructure and contact resistance of the Au-Sn solder joints were characterized after flip-chip bonding of the Au/Sn bumps processed by successive electrodeposition of Au and Sn. Microstructure of the Au-Sn solder joints, formed by flip-chip bonding at $285^{\circ}C$ for 30 sec, was composed of the $Au_5Sn$+AuSn lamellar structure. The interlamellar spacing of the $Au_5Sn$+AuSn structure increased by reflowing at $310^{\circ}C$ for 3 min after flip-chip bonding. While the Au-Sn solder joints formed by flip-chip bonding at $285^{\circ}C$ for 30 sec exhibited an average contact resistance of 15.6 $m{\Omega}$/bump, the Au-Sn solder joints reflowed at $310^{\circ}C$ for 3 min after flip-chip bonding possessed an average contact resistance of 15.0 $m{\Omega}$/bump.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.56-63
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• 1995

MESFETs of the Ti/Au and Ti/Pd/Au gate were fabricated on n-type GaAs. Interdiffusion at Schottky interfaces, Schottky contact properties, and MESFET characteristics with heat treatment were investigated. Ti of Ti/Au contact and Pd of Ti/Pd/Au contact acted as a barrier metal against interdiffusion of Au at >$220^{\circ}C$. Pd of Ti/Pd/Au contact acted as a barrier metal even at >$360^{\circ}C$, however, Ti of Ti/Au contact promoted interdiffusion of Au instead of role of barrier metal. As the heat treatment temperature increases, in the case of both contact, saturated drain current and pinch off voltage decreased, open channel resistance increased, and degree of parameter variation in Ti/Au gate was higher than in Ti/Pd/Au gate at >$360^{\circ}C$ Schottky barrier height of Ti/Au and Ti/Pd/Au contacts was 0.69eV and 0.68eV in the as-deposited state, respectively, and Fermi level was pinned in the vicinity of 1/2Eg. As the heat treatment temperature increases, barrier height of Ti/Pd/Au contact increased, however, decreased at >$360^{\circ}C$ in the case of Ti/Au contact. Ideality factor of Ti/Au contact was nearly constant regardless of heat treatment, however, increased at >$360^{\circ}C$ in the case of Ti/Au contact. From the results above, Ti/Pd/Au was stable gate metal than Ti/Au.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.555-562
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• 1990

Alloyed ohmic contact properties of Au-Zn/Au, Au-Be/Au,Au-Zn/Cr/Au, and Au-Be/Cr/Au metal system to p-InP were investigated. Optimum alloying conditions were obtained at the annealing temperature of 425\ulcorner for all the metal systems using a rapid thermal annealing system. Surface AES analysis and auger depth profiling were done for each metal system annealed at the optimum conditions. Outdiffusions of In and P from the InP substrate were found in the metal systems without Cr intermediate layer. Also, small amount of In. P and Cr were detected at the surface in the case of Au-Zn/Cr/Au system, while there were occured no outdiffusion of In, P, and Cr for Au-Be/Cr/Au system. The best surface morpholoty and specific contact resistivity of 4.5x 10**-5 \ulcornercm\ulcornerhave been obtained in this Au-Be/Cr/Au material system alloyed at 425\ulcorner for 60 second.

• Bulletin of the Korean Chemical Society
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• v.20 no.2
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• pp.147-149
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• 1999

The electronic structures of α- and β-gold selenides are studied. α- and β-AuSe are known as mixed valence compounds having linear (AuSe2, Au+) and square-planar (AuSe4, Au3+) units in their structure simultaneously. Our EHTB calculations, however, show that the oxidation states of Au in α- and β-AuSe are both close to +1. This is because the frontier orbitals are largely made up of Se p-orbitals and Au d-orbitals that lie well below the Fermi level. Our results are consistent with the recent X-ray absorption spectroscopy study on AuSe which show that all Au in the compound exhibit a monovalent state independent of their chemical environments.

• Korean Journal of Materials Research
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• v.27 no.4
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• pp.229-235
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• 2017

Through density functional theory calculations, to provide insight into the origins of the catalytic activity of Au nanoparticles (NPs) toward oxidation reactions, we have scrutinized the oxygen adsorption chemistry of 9 types of small unsupported Au NPs of around 1 nm in size (Au13, Au19, Au20, Au25, Au38, and Au55) looking at several factors (size, shape, and coordination number). We found that these NPs, except for the icosahedral Au13, do not strongly bind to $O_2$ molecules. Energetically most feasible $O_2$ adsorption that potentially provides high CO oxidation activity is observed in the icosahedral Au13, our smallest Au NP. In spite of the chemical inertness of bulk Au, the structural fluxionality of such very small Au NP enables strong $O_2$ adsorption. Our results can support recent experimental findings that the exceptional catalytic activity of Au NPs comes from very small Au species consisting of around 10 atoms each.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.179-179
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• 1999

Cu3AU(100) 단결정은 fcc 구조를 가지고 있으며 (100)면은 Cu와 Au가 1:1로 존재하고 가운데(200)면은 Cu만 존재한다. 따라서 Au 층은 (100)면에서만 존재하여 각 Au층은 서로 0.5nm 떨어져 있다. 이와 같은 Cu3Au(100) 단결정을 MEIS(Medium Energy Ion Scattering Spectroscopy) 실험 장비를 사용하여 0.35nm 떨어져 있는 Single unit cell의 윗면과 아래면, 즉 첫 층의 Au와 셋째층의 Au의 층분리를 통해서, 온도 변화에 따른 Cu3Au(100) 단결정의 표면 물리적 현상인 surface induced disorder을 밝혀내고자 한다. 우선 두 Au층의 분리 시도는 수소이온을 이용한 실험 조건에서는 extremely glancing exit angle 등 극한의 산란조거에서도 성공하지 못하였다. 깊이 분해능을 정해주는 electronic energy loss를 극대화하기 위해 수소이온이 아닌 질소 이온을 사용하여 energy spectra를 측정해 본 결과 아래 그림에서와 같이 표면 Au 층과 표면 셋째 Au층을 구분할 수 있었다. <110>으로 align된 조건에서는 셋째층의 Au 원자들이 완전히 shadow cone 내부에 존재하여 관측되지 않지만 9.75$^{\circ}$ tilt 한 경우 셋째층의 Au 원자들이 shadow cone 바깥으로 나오게 되어 그림에서와 같이 첫째 층과 셋째 층이 확실히 분리되어 측정되었다. 이를 바탕을 Cu3Au(100)의 온도변화에 다른 order disorder and segregation 현상을 측정하였다. ordered Cu3Au(100)은 28$0^{\circ}C$ 근처에서 surface층이 먼저 disordered상으로 바뀌는 surface induced disorder 현상이 일어나고 bulk transition 온도 39$0^{\circ}C$ 이하에서 R.T으로 온도를 낮추면 본래의 ordered 구조로 되돌아간다. 하지만 bulk transition 온도를 지나면 order-disorder transition이 비가역적이고 segregation 현상이 일어난다.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.408-416
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• 2022

In this study, the effect of Au-Sn alloy coating on reliability of electrical contacts was investigated via comparison with Au-Co alloy coating. The results show that Au-Sn alloy exhibited lower contact resistance and higher solder spreadability than those of Au-Co alloy after thermal aging. In the case of Au-Co alloy plating, the underlying Ni element diffused into Au-Co layer to form Ni oxides on surface during thermal aging, leading to increased contact resistance and decreased solder spreadability. Meanwhile, for Au-Sn alloy plating, Au-Ni-Sn metallic compound was formed at the interface between Au-Sn layer and underlying Ni layer. This compound acted as a diffusion barrier, thereby inhibiting the diffusion of Ni to Au-Sn layer during thermal aging. Consequently, Au-Sn alloy layer showed better contact reliability than that of Au-Co alloy layer.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.433-438
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• 2007

We fabricated thin films of Au and Ta/Au with thicknesses of 30 nm and 5 nm/30nm, respectively on Si(100) or Si(111) substrates using a dc magnetron sputtering system. Grain sizes, roughness and conductivity for Au thin films are measured as a function of the annealing temperatures. We observed that the grain size of samples enlarged and the surface became rougher with increasing annealing temperature. The grain size and roughness were improved in the structure of Si/Ta/Au than Si/Au. Furthermore, the Si(100) substrate was more effective for decreasing the resistance for Ta/Au system than Si(111) substrate. We confirm that by inserting a Ta buffer layer in Si(100)/Au, surface roughness was reduced and by adjusting the annealing temperature the grain size were enlarged. Consequently, the Au thin-film has improved conductivity.