• 전자통신동향분석
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• 제37권5호
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• Journal of electromagnetic engineering and science
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• 제18권2호
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• pp.101-107
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• 2018

The impedance bandwidth and radiation characteristics of an aperture-coupled microstrip line-fed patch antenna (ACMPA) with a high permittivity (${\varepsilon}_r=10$) feed substrate suitable for integration with a monolithic microwave integrated circuit (MMIC) are investigated for various feed substrate thicknesses through an experiment and computer simulation. The impedance bandwidth of an ACMPA with a high permittivity feed substrate increases as the feed substrate thickness decreases. Furthermore, the front-to-back ratio of an ACMPA with a high permittivity feed substrate increases and the cross-polarization level decreases as the feed substrate thickness decreases. As the impedance bandwidth of an ACMPA with a high permittivity feed substrate increases and its radiation characteristics improve as the feed substrate thickness decreases, the ACMPA configuration becomes suitable for integration with an MMIC.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.245-248
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• 1997

The dielectric resonators(DRs) with dielectric properties are widely used in microwave integrated circuit(MICs) and monolithic microwave integrated circuits(MMICS). The variational method as numerical simulation scheme would be applied to calculate the resonant frequencies(fr) and Q-factors of microwave dielectric resonators. The dielectric resonator with a cylindrical “puck” structure of high dielectric material is modeled in this simulation. The parameters, such as the diameter, the height, and the dielectric constant of dielectric resonator, would determine the resonant frequency and the Q-factor. The relationship between these parameters would effect each other to evaluate the approximate resonant frequency. This simulation method by the variational formula is very effective to calculate fr, and Q-factor. in high frequency microwave dielectric resonator The error rate of the simulation results and the measured results would be considered to design the microwave dielectric resonators.

• Journal of electromagnetic engineering and science
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• 제16권1호
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• pp.44-51
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• 2016

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

• ETRI Journal
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• 제31권3호
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• pp.247-253
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• 2009

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

• Journal of information and communication convergence engineering
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• 제1권3호
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• pp.129-132
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• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000${\AA}$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/$SiO_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

• ETRI Journal
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• 제26권4호
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• pp.307-314
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• 2004

The application of a discrete pseudomorphic high electron mobility transistor (p-HEMT) as a grounded switch allows for the development of low cost phase shifters and phase modulators operating in a Ku band. This fills the gap in the development of phase control devices comprising p-i-n diodes and microwave monolithic integrated circuits (MMICs). This paper describes a discrete p-HEMT characterization and modeling in switching mode as well as the development of a low-cost four-bit phase shifter and direct quadrature phase shift keying (QPSK) modulator. The developed devices operate in a Ku band with parameters comparable to commercially available MMIC counterparts. Both of them are CMOS compatible and have no power consumption. The parameters of the QPSK modulator are very close to the requirements of available standards for satellite earth stations.

• Journal of information and communication convergence engineering
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• 제2권3호
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• pp.149-152
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• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• 한국전자파학회논문지
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• 제11권2호
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• pp.294-301
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• 2000

RF(radio frequency) 시스템의 송신탄을 설계할 때 고려해야 할 중요한 요소 중의 하나인 EMI(Electro magnetic interference)의 규격시험에서 항상 문제시되는 것이 송신기의 출력 스펙트럼에서 나타나는 불요 신호(Spurious interference) 이다. 이 불요 성분들 중 특히 문제가 되고 있는 것이 국부발진기(LO; Local oscillator)로부터 누설되는 LOL(Local oscillator leakage) 성분이다. 이 LOL성분은 국부발진기에서 누설(leakage)되어 RF단의 증폭기를 통하여 증폭되어 최종 출력에서 매우 높은 선호의 크기로 나타난다. 일반적으로 LOL을 제거하기 위해 서 너치필터(Notch filter) 또는 대역통과필터 (Band pass filter)를 사용해왔다. 본 논문에서는 국부발진기로부터 누설되는 불요 성분, 즉 LOL성분을 제거하는 방법으로 LOL과 동일한 크기를 가지고 위상 차이가 $180^{\circ}$인 신호를 국부발전기의 출력에서 만들어 믹서( Mixer)의 출력단에 더함으로써 LOL성분을 효과적으로 제거한다. 본 방 식을 무선랜(WLAN; Wireless 1$\infty$al area network) 시스템에 적용한 결과. 기존의 방식보다 30 dB 이상 LO 누설선호플 감쇄시킬 수 있었다 또한 본 방식은 RF 시스댐을 소형화 및 MMIC(Monolithic microwave integrated C circuit)화 할 경우 종전의 방법보다 효과적일 것으로 기대된다.

• 한국산업정보학회논문지
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• 제6권4호
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• pp.48-53
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• 2001

TMT-2000 기지국용 3단 저잡음 증폭기를 설계하고 제작한다. 첫째 단에서의 증폭소자는 잡음특성이 좋은 GaAs HJ-FET를 사용하고, 둘째 및 셋째 단에는 이득과 출력전압이 높은 값을 갖도록 하기 위해 모노리딕(monolithic) 마이크로웨이브 집적회로를 사용한다. 또한 입력 정재파비를 낮추기 위해서 평형증폭기를 사용하는데, 이 평형증폭기의 위상차로 인한 잡음지수를 최소화하기 위해서 첫째 단에만 제한적으로 사용한다. 제작된 증폭기는 동작 주파수에서 이득 39.74$\pm$0.4dB, 최대잡음지수 0.97dB, 입.출력 정재파비 1.2 이하 및 OIP$_3$ 특성은 38.17dBm을 나타낸다.