Journal of electromagnetic engineering and science

The Korean Institute of Electromagnetic Engineering and Science (한국전자파학회)
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6-18 GHz Reactive Matched GaN MMIC Power Amplifiers with Distributed L-C Load Matching

  • Kim, Jihoon (School of Electrical Engineering and Computer Science and INMC, Seoul National University) ;
  • Choi, Kwangseok (School of Electrical Engineering and Computer Science and INMC, Seoul National University) ;
  • Lee, Sangho (School of Electrical Engineering and Computer Science and INMC, Seoul National University) ;
  • Park, Hongjong (School of Electrical Engineering and Computer Science and INMC, Seoul National University) ;
  • Kwon, Youngwoo (School of Electrical Engineering and Computer Science and INMC, Seoul National University)
  • Received : 2015.11.07
  • Accepted : 2015.12.28
  • Published : 2016.01.31
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Abstract

A commercial $0.25{\mu}m$ GaN process is used to implement 6-18 GHz wideband power amplifier (PA) monolithic microwave integrated circuits (MMICs). GaN HEMTs are advantageous for enhancing RF power due to high breakdown voltages. However, the large-signal models provided by the foundry service cannot guarantee model accuracy up to frequencies close to their maximum oscillation frequency ($F_{max}$). Generally, the optimum output load point of a PA varies severely according to frequency, which creates difficulties in generating watt-level output power through the octave bandwidth. This study overcomes these issues by the development of in-house large-signal models that include a thermal model and by applying distributed L-C output load matching to reactive matched amplifiers. The proposed GaN PAs have successfully accomplished output power over 5 W through the octave bandwidth.

Keywords

References

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