ETRI Journal

Electronics and Telecommunications Research Institute (한국전자통신연구원)
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Ku-Band Power Amplifier MMIC Chipset with On-Chip Active Gate Bias Circuit

  • Noh, Youn-Sub (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI) ;
  • Chang, Dong-Pil (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI) ;
  • Yom, In-Bok (Broadcasting & Telecommunications Convergence Research Laboratory, ETRI)
  • Received : 2008.12.10
  • Accepted : 2009.04.20
  • Published : 2009.06.30
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Abstract

We propose a Ku-band driver and high-power amplifier monolithic microwave integrated circuits (MMICs) employing a compensating gate bias circuit using a commercial 0.5 ${\mu}m$ GaAs pHEMT technology. The integrated gate bias circuit provides compensation for the threshold voltage and temperature variations as well as independence of the supply voltage variations. A fabricated two-stage Ku-band driver amplifier MMIC exhibits a typical output power of 30.5 dBm and power-added efficiency (PAE) of 37% over a 13.5 GHz to 15.0 GHz frequency band, while a fabricated three-stage Ku-band high-power amplifier MMIC exhibits a maximum saturated output power of 39.25 dBm (8.4 W) and PAE of 22.7% at 14.5 GHz.

Keywords

References

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