• Title/Summary/Keyword: microstructural defects

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Optical and Structural Properties of Emerging Dilute III-V Bismides

  • Santos, B.H. Bononi Dos;Gobatoa, Y. Galvao;Heninib, M.
    • Applied Science and Convergence Technology
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    • v.23 no.5
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    • pp.211-220
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    • 2014
  • In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.

The study of GaN-based semiconductors with low-defect density by microstructural characterization (미세구조 분석을 이용한 저밀도 결함을 가진 GaN계 반도체 연구)

  • Cho, Hyung-Koun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.424-427
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    • 2003
  • We have investigated the microstructural analysis of epitaxial lateral overgrowth (ELO), pendeoepitaxy (PE), and superlattice structures used as technology for the reduction of structural defects like dislocation in nitride semiconductors using transmission electron microscopy. We confirmed that the regrowth process such as ELO and PE is very effective technique on the reduction of threading dislocation (less than $10^6/cm^2$) in the specific area. However, to decrease the defect density in the whole nitride films and the suppress the generation of defect by regrowth, we should find the optimized conditions. Besides, the process using double PE and AlGaN/GaN superlattice structure showed no effect on the defect reduction up to now.

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Microstructural Evolution and Recrystallization Behavior Traced by Electron Channeling Contrast Imaging

  • Oh, Jin-Su;Yang, Cheol-Woong
    • Applied Microscopy
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    • v.48 no.4
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    • pp.130-131
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    • 2018
  • Electron channeling contrast imaging (ECCI) is one of the imaging techniques in scanning electron microscopy based on a variation in electron backscattering yield depending on the direction of the primary electron beam with respect to the crystal lattice. The ECCI provides not only observation of the distribution of individual grains and grain boundaries but also identification of the defects such as dislocations, twins, and stacking faults. The ECCI at the interface between recrystallized and deformed region of shot peening treated nickel clearly demonstrates the microstructural evolution during the recrystallization including original grain boundaries, and thus can provide better insight into the recrystallization behavior.

EFFECT OF CONTINUOUS WELDING ON MICROSTRUCTURE AND MECHANICAL PROPERTIES OF ANGLE AND T-BAR

  • JIHOON JANG;CHANGSUK YOON;SANGIK LEE;DONG-GEUN LEE
    • Archives of Metallurgy and Materials
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    • v.65 no.4
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    • pp.1245-1248
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    • 2020
  • Section steels produced by welding are essential parts for shipbuilding and offshore plant production. T-type and H-type section steels are produced by handwork for secondary processing, which is a generally difficult and tedious activity. Therefore, automatic welding, with sound welding properties and a high-speed process, is necessary to meet the production demands. Welding conditions can be optimized by controlling various parameters to obtain suitable and highly reliable microstructural properties. In this study, the heat affected zone and weld defects of fillet-welded Angle and T-bar parts were investigated in terms of their microstructural, macrostructural, and mechanical properties to ensure the soundness of AH36 section steel parts joined by continuous welds.

Effects of Proton Irradiation on the Microstructure and Surface Oxidation Characteristics of Type 316 Stainless Steel (양성자 조사가 316 스테인리스강의 미세조직과 표면산화 특성에 미치는 영향)

  • Lim, Yun-Soo;Kim, Dong-Jin;Hwang, Seong Sik;Choi, Min Jae;Cho, Sung Whan
    • Corrosion Science and Technology
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    • v.20 no.3
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    • pp.158-168
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    • 2021
  • Austenitic 316 stainless steel was irradiated with protons accelerated by an energy of 2 MeV at 360 ℃, the various defects induced by this proton irradiation were characterized with microscopic equipment. In our observations irradiation defects such as dislocations and micro-voids were clearly revealed. The typical irradiation defects observed differed according to depth, indicating the evolution of irradiation defects follows the characteristics of radiation damage profiles that depend on depth. Surface oxidation tests were conducted under the simulated primary water conditions of a pressurized water reactor (PWR) to understand the role irradiation defects play in surface oxidation behavior and also to investigate the resultant irradiation assisted stress corrosion cracking (IASCC) susceptibility that occurs after exposure to PWR primary water. We found that Cr and Fe became depleted while Ni was enriched at the grain boundary beneath the surface oxidation layer both in the non-irradiated and proton-irradiated specimens. However, the degree of Cr/Fe depletion and Ni enrichment was much higher in the proton-irradiated sample than in the non-irradiated one owing to radiation-induced segregation and the irradiation defects. The microstructural and microchemical changes induced by proton irradiation all appear to significantly increase the susceptibility of austenitic 316 stainless steel to IASCC.

Microstructural Analysis of Directionally Solidified Materials Obtained via Line-Scan SLS of Si Films

  • Chung, U.J.;Limanov, A.B.;Wilt, P.C. Van Der;Chitu, A.M.;Im, James S.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1744-1749
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    • 2006
  • Line-scan SLS of thin Si films permits the attainment of low-defect-density Si films with a directionally solidified microstructure. This paper deals with: (1) identifying and examining the structural defects that are found in the resultant material, (2) how the spatial variations in the type and density of the observed defects may potentially affect the overall uniformity of the resulting devices, and (3) some technical options that may be applied in order to potentially alleviate the situation.

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Friction Welding of MA754 ODS Alloy Produced by Mechanical Alloying (기계적 합금법으로 제조된 MA754 산화물 분산강화 합금의 마찰압접에 관한 연구)

  • 강지훈
    • Journal of Powder Materials
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    • v.1 no.2
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    • pp.198-207
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    • 1994
  • In order to find an optimal friction-welding condition for Ni-base ODS alloy (MA 754) produced by mechanical alloying, joint experiments were performed with various conditions of friction pressures (50~500 MPa), friction times (1~5 sec) and upset pressures (50~600 MPa). The optimal friction pressure and upset pressure must be above 400 MPa and 500 MPa, respectively, which are determined by tensile strengths and fracture features of as-welded joints. A maximum stress설h of 975 MPa could be obtained under these pressure conditions at friction time of 2 sec. Microstructural features of bonded interface by optical microscope and SEM revealed that the interface regions of all specimens are consisted with three distinct regions and defects such as voids, cracks and wavy interfaces exist in the joints produced under not-optimized conditions. EDS results showed that these defects include oxides composed with elements of Al, Y and Ti. The hardness on the bonded interface was higher than in the base metal region. Specimens fractured in bonded interface region had lower strength values compared to those fractured in base metal region. Surfaces of the former showed a typical intergranular fracture.

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Correlation between Physical Defects and Performance in AlGaN/GaN High Electron Mobility Transistor Devices

  • Park, Seong-Yong;Lee, Tae-Hun;Kim, Moon-J.
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.2
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    • pp.49-53
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    • 2010
  • Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.

Trends in Materials Modeling and Computation for Metal Additive Manufacturing

  • Seoyeon Jeon;Hyunjoo Choi
    • Journal of Powder Materials
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    • v.31 no.3
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    • pp.213-219
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    • 2024
  • Additive Manufacturing (AM) is a process that fabricates products by manufacturing materials according to a three-dimensional model. It has recently gained attention due to its environmental advantages, including reduced energy consumption and high material utilization rates. However, controlling defects such as melting issues and residual stress, which can occur during metal additive manufacturing, poses a challenge. The trial-and-error verification of these defects is both time-consuming and costly. Consequently, efforts have been made to develop phenomenological models that understand the influence of process variables on defects, and mechanical/ electrical/thermal properties of geometrically complex products. This paper introduces modeling techniques that can simulate the powder additive manufacturing process. The focus is on representative metal additive manufacturing processes such as Powder Bed Fusion (PBF), Direct Energy Deposition (DED), and Binder Jetting (BJ) method. To calculate thermal-stress history and the resulting deformations, modeling techniques based on Finite Element Method (FEM) are generally utilized. For simulating the movements and packing behavior of powders during powder classification, modeling techniques based on Discrete Element Method (DEM) are employed. Additionally, to simulate sintering and microstructural changes, techniques such as Monte Carlo (MC), Molecular Dynamics (MD), and Phase Field Modeling (PFM) are predominantly used.

A Microstructural Design and Modeling of Neutron-Irradiated Materials (중성자 조사재의 미세구조 설계와 모델링)

  • Chang, Kunok
    • Applied Chemistry for Engineering
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    • v.31 no.4
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    • pp.347-351
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    • 2020
  • A material changes its physical and chemical properties through the interaction with radiation and also the neutrons, which is electronically neutral so that the penetration depth is relatively deeper than that of other radioactive way including alpha or beta ray. Therefore, the radiation damage by neutron irradiation has been intensively investigated for a long time with respect to the safety of nuclear power plants. The damage induced by neutron irradiation begins with the creation of point defects in atomic scale in the unit of picoseconds, and their progress pattern can be characterized by microstructural defects, such as dislocation loops and voids. Their morphological characteristics affect the properties of neutron-irradiated materials, therefore, it is very important to predict the microstructure at a given neutron irradiation condition. This paper briefly reviews the evolution of radiation damage induced by neutron irradiation and introduces a phase-field model that can be widely used in predicting the microstructure evolution of irradiated materials.