• 전력전자학회:학술대회논문집
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• 전력전자학회 2008년도 하계학술대회 논문집
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• pp.646-648
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• 2008

The multi-films of a metallic film and a transparent conducting oxide (TCO, indium-tin oxide, ITO) film were formed on the stainless steel 316 and 304 plates by a sputtering method and an E-beam method and then the external metallic region of the stainless steel bipolar plates was converted into the metal nitride films through an annealing process. The multi-film formed on the stainless steel bipolar plates showed the XRD patterns of the typical indium-tin oxide, the metallic phase and the metal substrate and the external nitride film. The XRD pattern of the thin film on the bipolar plates modified showed two metal nitride phases of CrN and $Cr_2N$ compound. Surface microstructural morphology of the multi-film deposited bipolar plates was observed by AFM and FE-SEM. The electrical resistivity of the stainless steel bipolar plates modified was evaluated.

• 마이크로전자및패키징학회지
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• 제27권4호
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• pp.77-81
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• 2020

Resistive RAM (ReRAM)은 전이금속 산화물의 저항변화 특성을 이용하는 차세대 비휘발 메모리로 전이금속산화물 내의 산소공공의 재분포를 통한 저항변화 특성을 이용한다. 따라서 저항변화 특성을 위해 전이금속산화물 내에는 일정량 이상의 산소공공이 요구되며 이를 위해서는 박막 형성 공정에서 산화 수를 조절할 수 있는 공정이 필요하다. 본 연구에서는 직접패턴이 가능한 photochemical metal organic deposition (PMOD) 공정을 사용하여 UV 노출에 의해 photochemical metal organic precursor의 ligand가 분해되는 과정에서 전기장을 인가하여 박막내의 산화 수를 조절하는 실험을 진행하였다. Electric field assisted PMOD (EFAPMOD) 법을 이용하여 FeOx 박막의 산화 수 조절이 가능함을 x-ray photoelectron spectroscopy (XPS) 분석과 I-V 측정을 통하여 확인하였으며, EFAPMOD 공정 중 인가하는 전압의 크기를 조절하여 박막의 산화 수를 조절할 수 있음을 확인하였다. 따라서 EFAPMOD 공정 중 인가전압의 크기를 이용하여 저항변화 특성에 적합한 적정한 산화수를 가지는 금속산화물 박막을 얻고 그 저항변화 특성을 조정할 수 있음을 확인하였다.

• 한국응용과학기술학회지
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• 제26권4호
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• pp.467-472
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• 2009

Ultraviolet curable coating solution was prepared with poly(ethylene glycol) acrylate oligomer and various mono and multi-functional acrylate monomers. The optical properties of UV cured coating layer on PET film with acrylate coating solution containing metal oxides, such as fumed silica and alumina, were also investigated to reduce light reflection on films. Poly(ethylene glycol) diacrylate which has 575 of average molecular weight was used as oligomer acrylate, and pentaerythritol triacrylate and dipentaerythritolpenta-/hexa acrylate were used as multi-functional acrylate monomers. Also, butyl acrylate was used to improve the adhesion as well as to reduce glass transition temperature to give a better flexability. 1-hydroxy cyclohexyl phenyl ketone was used as photoinitiator. We found out the metal oxides in acrylate coating solution showed a homogeneous dispersion from energy dispersive spectroscopy data. Transmittance and light reflection of coated PET film was measured with UV/vis spectrometer and gloss meter, respectively. When 1.00 g of both metal oxides was added into coating solution, the transmittance and the glossiness were reduced from 90% to 30% and from 190 GU to 35 GU, respectively. However, adding up to 1.00 g of the metal oxide into coating solution did not affect on the hardness of coating layer and adhesion between coated layer and PET film. Conclusively, we can control transmittance and light reflection of coated film by adjusting the amounts of metal oxide in coating solution.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.229-229
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• 2012

Adhesion of Copper film on the aluminum oxide layer formed by anodizing an aluminum plate was enhanced by applying ion beam mixing method. Forming an conductive metal layer on the insulating oxide surface without using adhesive epoxy bonds provide metal-PCB(Printed Circuit Board) better thermal conductivities, which are crucial for high power electric device working condition. IBM (Ion beam mixing) process consists of 3 steps; a preliminary deposition of an film, ion beam bombardment, and additional deposition of film with a proper thickness for the application. For the deposition of the films, e-beam evaporation method was used and 70 KeV N-ions were applied for the ion beam bombardment in this work. Adhesions of the interfaces measured by the adhesive tape test and the pull-off test showed an enhancement with the aid of IBM and the adhesion of the ion-beam-mixed films were commercially acceptable. The mixing feature of the atoms near the interface was studied by scanning electron microscopy, Auger electron spectroscopy, and X-ray photoelectron spectroscopy.

• 한국세라믹학회지
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• 제28권6호
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• pp.437-442
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• 1991

Temperature and atmosphere dependence of electrical conduction of the metal Cu, Ag, Au films, vaccum evaporated on glass, was investigated. The structural changes of the metal films were examined by SEM and high temperature XRD. The electrical resistance slightly increased with initial temperature increase up to the inflection point and decreased to minimum value, after this rapidly increased with further temperature increased below minimum. These phenomena were caused by the thermally induced film failure as a result of the mass transport. The temperature for the film failure increased in the order of O2, Air, Vacuum, N2, Ar in Cu, Ag films and Air, Vacuum, N2, Ar in Au film. The increase of resistance at the lower temperature range was attributed to the lattice distortion by disordered crystal structure, while the decreasing resistance was attributed to the removal of structural defects and film densification.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.826-829
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• 2003

Metal/chalcogenide glass semiconductor(CGS) thin film devices were produced in the vacuum evaporator by the methode of vacuum thermal evaporation. We investigated the influence of the correlations of thickness of metal and CGS upon the concentration of Metal in a CGS thin film. It has shown that M/CGS thin film devices were very sensitive to temperature.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.405-409
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• 2001

This paper describes fabrication and characteristics of metal thin-film pressure sensor for working at high temperature. The proposed pressure consists of a chrom thin-film, patterned on a Wheat stone bridge configuration, sputter-deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097∼1.21mV/V$.$kgf/$\textrm{cm}^2$ in the temperature range of 25∼200$^{\circ}C$ and the maximum non-linearity is 0.43%FS.

• Current Optics and Photonics
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• 제6권6호
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• pp.583-589
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• 2022

Vanadium dioxide (VO₂) is a well-known material that undergoes insulator-to-metal phase transition near room temperature. Since the conductivity of VO₂ changes several orders of magnitude in the terahertz (THz) spectral range during the phase transition, VO₂-based active metamaterials have been extensively studied. Experimentally, it is reported that the metal nanostructures on the VO₂ thin film lowers the critical temperature significantly compared to the bare film. Here, we theoretically studied such early transition phenomena by developing an analytical model. Unlike experimental work that only measures transmission, we calculate the reflection and absorption and demonstrate that the role of absorption is quite different for bare and patterned samples; the absorption gradually increases for bare film during the phase transition, while an absorption peak is observed at the critical temperature for the metamaterials. In addition, we also discuss the gap width and VO₂ thickness effects on the transition temperatures.

• 한국전기전자재료학회논문지
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• 제28권3호
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• pp.154-159
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• 2015

In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.