• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.93-93
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• 2016

Large scale integrated circuits (LSIs) has been improved by the shrinkage of the circuit dimensions. The smaller chip sizes and increase in circuit density require the miniaturization of the line-width and space between metal interconnections. Therefore, an extreme precise control of the critical dimension and pattern profile is necessary to fabricate next generation nano-electronics devices. The pattern profile control of plasma etching with an accuracy of sub-nanometer must be achieved. To realize the etching process which achieves the problem, understanding of the etching mechanism and precise control of the process based on the real-time monitoring of internal plasma parameters such as etching species density, surface temperature of substrate, etc. are very important. For instance, it is known that the etched profiles of organic low dielectric (low-k) films are sensitive to the substrate temperature and density ratio of H and N atoms in the H2/N2 plasma [1]. In this study, we introduced a feedback control of actual substrate temperature and radical density ratio monitored in real time. And then the dependence of etch rates and profiles of organic films have been evaluated based on the substrate temperatures. In this study, organic low-k films were etched by a dual frequency capacitively coupled plasma employing the mixture of H2/N2 gases. A 100-MHz power was supplied to an upper electrode for plasma generation. The Si substrate was electrostatically chucked to a lower electrode biased by supplying a 2-MHz power. To investigate the effects of H and N radical on the etching profile of organic low-k films, absolute H and N atom densities were measured by vacuum ultraviolet absorption spectroscopy [2]. Moreover, using the optical fiber-type low-coherence interferometer [3], substrate temperature has been measured in real time during etching process. From the measurement results, the temperature raised rapidly just after plasma ignition and was gradually saturated. The temporal change of substrate temperature is a crucial issue to control of surface reactions of reactive species. Therefore, by the intervals of on-off of the plasma discharge, the substrate temperature was maintained within ${\pm}1.5^{\circ}C$ from the set value. As a result, the temperatures were kept within $3^{\circ}C$ during the etching process. Then, we etched organic films with line-and-space pattern using this system. The cross-sections of the organic films etched for 50 s with the substrate temperatures at $20^{\circ}C$ and $100^{\circ}C$ were observed by SEM. From the results, they were different in the sidewall profile. It suggests that the reactions on the sidewalls changed according to the substrate temperature. The precise substrate temperature control method with real-time temperature monitoring and intermittent plasma generation was suggested to contribute on realization of fine pattern etching.

• Journal of the Korean Electrochemical Society
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• v.15 no.2
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• pp.95-100
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• 2012

$LiFePO_4$ is an attractive cathode material due to its low cost, good cyclability and safety. But it has low ionic conductivity and working voltage impose a limitation on its application for commercial products. In order to solve these problems, the iron($Fe^{2+}$)site in $LiFePO_4$ can be substituted with other transition metal ions such as $Mn^{2+}$ in pursuance of increase the working voltage. Also, reducing the size of electrode materials to nanometer scale can improve the power density because of a larger electrode-electrolyte contact area and shorter diffusion lengths for Li ions in crystals. Therefore, we chose electrospinning as a general method to prepare $Li[Fe_{0.9}Mn_{0.1}]PO_4$ to increase the surface area. Also, there have been very a few reports on the synthesis of cathode materials by electrospinning method for Lithium ion batteries. The morphology and nanostructure of the obtained $Li[Fe_{0.9}Mn_{0.1}]PO_4$ nanofibers were characterized using scanning electron microscopy(SEM). X-ray diffraction(XRD) measurements were also carried out in order to determine the structure of $Li[Fe_{0.9}Mn_{0.1}]PO_4$ nanofibers. Electrochemical properties of $Li[Fe_{0.9}Mn_{0.1}]PO_4$ were investigated with charge/discharge measurements, electrochemical impedance spectroscopy measurements(EIS).

• Transactions of the Korean hydrogen and new energy society
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• v.17 no.1
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• pp.31-38
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• 2006

There are two types of metal hydride electrodes as a negative electrode in a Ni-MH battery, $AB_2$ Zr-based Laves phases and $AB_5$ LM(La-rich mischmetal)-based alloys. The $AB_5$ alloy electrodes have characteristic properties such as a large discharge capacity per volume, easiness in activation, long cycle life and a low cost of alloy. However they have a relatively small discharge capacity per weight. The $AB_2$alloy electrodes have a much higher discharge capacity per weight than $AB_5$ alloy electrodes, however they have some disadvantages of poor activation behavior and cycle life. Therefore, in order to improve the discharge capacity of the $AB_5$ alloy electrode the Zr, Ti and V which are the alloying elements of the $AB_2$ alloys were added to the $LaNi_{3.6}Ai_{0.4}Co_{0.7}Mn_{0.3}$ alloy which was chosen as a $AB_5$ alloy with a high capacity. The addition of Zr, Ti and V to $LaNi_{3.6}Ai_{0.4}Co_{0.7}Mn_{0.3}$ alloy improved the activation to be completed in two cycles. The discharge capacities of Zr 0.02, Ti 0.02 and V 0.1 alloys in $LaNi_{3.6}Ai_{0.4}Co_{0.7}Mn_{0.3}M_y$ (M = Zr, Ti, V) were respectively 346, 348 and 366 mAh/g alloy. The alloy electrodes, Zr 0.02, Ti 0.05 and V 0.1 in $LaNi_{3.6}Ai_{0.4}Co_{0.7}Mn_{0.3}M_y$ (M = Zr, Ti, V), have shown good cycle property after 200 cycles. The rate capability of the $LaNi_{3.6}Ai_{0.4}Co_{0.7}Mn_{0.3}M_y$ (M = Zr, Ti, V) alloy electrodes were very good until 0.6 C rate and the alloys, Zr 0.02, Ti 0.05 and V 0.1, have shown the best result as 92 % at 2.4 C rate. The charge retention property of the $LaNi_{3.6}Ai_{0.4}Co_{0.7}Mn_{0.3}M_y$ (M = Zr, Ti, V) alloys was not good and the alloys with M content from 0.02 to 0.05 showed better charge retention properties.

• Journal of Energy Engineering
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• v.15 no.1 s.45
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• pp.52-59
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• 2006

This paper examined the conversion of methane to hydrogen and other higher hydrocarbons using dielectric barrier discharge with AC pulse power. Two metal electrodes of a coaxial-type plasma reactor were separated by gas gap and an alumina tube. The inner electrode was located inside the alumina tube. The alumina tube was located inside the stainless steel tube, which was used as the outer electrode. Effect of feed gas composition (methane, oxygen, argon, water and helium), flow rate, applied frequency, input volt-age on methane conversion and product distribution were studied. The major products of plasma chemical reactions were ethylene, ethane, propane, buthane, hydrogen, carbon monoxide and carbon dioxide. The increment of applied voltage and the usage of inert gas as the background (helium and argon) enhanced the selectivity of hydrocarbons and methane conversion. The addition of water in the feed stream enhanced the conversion of methane and yield of hydrogen. Higher voltage leads to higher yield of $C_2H_6,\;C_3H_8,\;C_4H_{10}$ and yield or $C_2H_2\;and\;C_2H_4$ appeared highly in lower voltage.

• Resources Recycling
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• v.21 no.5
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• pp.31-37
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• 2012

As a recovery of elemental silicon from the sludge of Si wafer process, a process of mechanical separation-chlorine roasting-electrolysis has been suggested. The silicon sludge consisted of Si, SiC, machine oil, and metallic impurities. The oil and metal impurities was removed by mechanical separation. The Si-SiC mixture was converted to silicon chloride by chlorine roasting at $1000^{\circ}C$ for 1 hr and the silicon chloride was dissolved into an ionic liquid of $[Bmpy]Tf_2N$ as an electrolyte. Cyclic voltammetry results showed an wide voltage window of pure $[Bmpy]Tf_2N$ and a reduction peak of elemental Si from $[Bmpy]Tf_2N$ dissolved $SiCl_4$ on Au electrode, respectively. The silicon deposits could be prepared on the Au electrode by the potentiostatic electrolysis of -1.9 V vs. Pt-QRE. The elemental silicon uniformly electrodeposited was confirmed by various analytical techniques including XRD, FE-SEM with EDS, and XPS. Any impurity was not detected except trace oxygen contaminated during handling for analysis.

• Applied Chemistry for Engineering
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• v.3 no.1
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• pp.88-99
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• 1992

For the development of semiconducting photoelectrode to be more stable and efficient in the process of photoelectrolysis of the water, pure titanium rods were oxidized by anodic oxidation, furance oxidation and flame oxidation and used as electrodes. The Indium islands were formed by electrodeposition of "In" thin film on $TiO_2$ and Ti by electrodeposition. Also $A1_2O_3$ and NiO islands were coated on Ti by the electron-beam evaporation technique. The maximum photoelectrochemical conversion efficiency(${\eta}$) was 0.98% for flame oxidized electrode($1200^{\circ}C$ for 2min in air). Anodically oxidized electrodes have photoelectrochemical conversion efficiency of 0.14%. Furnace oxidized electrode($800^{\circ}C$ for 10min in air) has 0.57% of photoelectrochemical efficiency and shows a band-gap energy of about 2.9eV. The $In_2O_3$ coated $TiO_2$ exhibits 0.8% of photoelectrochemical efficiency but much higher value of ${\eta}$ was obtained with the Increase of applied blas voltage. However, $Al_2O_3$ or NiO coated $TiO_2$ shows much low value of ${\eta}$. The efficiency was dependent on the presence of the metallic interstitial compound $TiO_{0+x}$(x<0.33) at the metal-semiconductor interface and the thickness of the suboxide layer and the external rutile scale.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.5
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• pp.12-18
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• 2008

Ag paste was employed for source and drain electrode of OTFTs and for the data metal lines of OTFT-OLED array on PC(polycarbonate) substrate. We tested two kinds of Ag-pastes such as pastes for 325 mesh and 500 mesh screen mask to examine the pattern ability and electrical performance for OTFTs. The minimum feature size was 60 ${\mu}m$ for 325 mesh screen mask and 40 ${\mu}m$ for 500 mesh screen mask. The conductivity was 60 $m{\Omega}/\square$ for 325 mesh and 133.1 $m{\Omega}/\square$ for 500 mesh. For the OTFT performance the mobility was 0.35 $cm^2/V{\cdot}sec$ and 0.12 $cm^2/V{\cdot}sec$, threshold voltage was -4.7 V and 0.9 V, respectively, and on/off current ratio was ${\sim}10^5$, for both screen masks. We applied the 500 mash Ag paste to OTFT-OLED array because of its good patterning property. The pixel was composed of two OTFTs and one capacitor and one OLED in the area of $2mm{\times}2mm$. The panel successfully worked in active mode operation even though there were a few bad pixels.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of the Korean Chemical Society
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• v.35 no.5
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• pp.545-552
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• 1991

A mercury ion-sensitive carbon-paste electrode (CPE) was constructed with l-sparteine. Mercury (II) ion was chemically deposited by the complexation with l-sparteine onto the CPE. The surface of CPEs was characterized by cyclic voltammetry and anodic stripping voltammetry in an acetate buffer solution, separately. Exposure of CPEs to acid solution could regenerate surface and reuse it for deposition. In 5 deposition/measurement/regeneration cycle, the response was reproducible and in licnear up to $2.0\;{\times}\;10^{-6}$ M with linear sweep voltammetry. In case of using the differential pulse technique, we have obtained the linear response up to $7.0 {\times}10^{-7}$ M with relative standard deviation of ${\pm}5.1$%. The detection limit was $5.0{\times}10^{-7}$ M for 20 minutes of the deposition. We have investigated the interference effect of various metal ions, which are expected to form the complex with ligand. Silver (I) ion of these has interfered with the analysis of Hg (II) ions. However, pretreatment of the silver (I) ion with potassium chloride led to no interference on the analysis of mercury ions in aqueous solution.

• Journal of Korean Society of Environmental Engineers
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• v.37 no.4
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• pp.204-209
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• 2015

The effluent limit of nickel from electroplating wastewater has been strengthened from 5 mg/L to 3 mg/L from 2014. However, currently applied treatment process for nickel plating wastewater is unable to meet the effluent limit, most of the treatment concept conducted by treatment plant is dilution with other metal bearing wastewater. This can cause very significant impact to the environment of nickel contamination. With this connection, the feasibility test has been conducted with the use of electrolysis by using sacrificial electrodes. Experiments were conducted in synthetic and electroless nickel plating wastewater. Optimal condition of current density, pH were derived from the synthetic wastewater. It was found that the removal efficiency of nickel exceeded 94% at the operation condition of at pH 9 and the current density of $1{\sim}2mA/cm^2$. At this conditions, the iron sludge was generated very low amount. However, it was unsuccessful to meet the effluent limit by applying these treatment conditions to the real electroplating wastewater. This can be explained due to the matrix effect of other metals and anions contained real electroplating wastewater. From the result of further study, the optimal conditions for the real wastewater treatment were found out to be at pH 9, current density $6{\sim}7mA/cm^2$, for 5 minutes of operating time. At these conditions, 88% removal of nickel was achieved, which results the residual nickel concentration was below 3 mg/L.