• The Transactions of the Korean Institute of Electrical Engineers D
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• v.51 no.8
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• pp.344-351
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• 2002

The proposed immune algorithm has an uncomplicated structure and memory-cell mechanism as the optimization algorithm which imitates the principle of humoral immune response. We use the proposed algorithm to solve parameter optimization problems. Up to now, the applications of immune algorithm have been optimization problems with non-varying system parameters. Therefore the usefulness of memory-cell mechanism in immune algorithm is without. This paper proposes the immune algorithm using a memory-cell mechanism which can be the application of system with nonlinear varying parameters. To verified performance of the proposed immune algorithm, the speed control of nonlinear DC motor are performed. The results of Computer simulations represent that the proposed immune algorithm shows a fast convergence speed and a good control performances under the varying system parameters.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2002.05a
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• pp.175-178
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• 2002

The proposed immune algorithm has an uncomplicated structure and memory-cell mechanism as the optimization algorithm which imitates the principle of humoral immune response, and has been used as methods to solve parameter optimization problems. Up to now, the applications of immune algorithm have been optimization problems with non-varying system parameters. Therefore, the effect of memory-cell mechanism, which is a merit of immune algorithm, is without. this paper proposes the immune algorithm using a memory-cell mechanism which can be the application of system with nonlinear varying parameters. To verified performance of the proposed immune algorithm, the speed control of nonlinear DC motor are performed. Computer simulation studies show that the proposed immune algorithm has a fast convergence speed and a good control performances under the varying system parameters.

• Journal of the Korean Institute of Intelligent Systems
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• v.12 no.4
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• pp.353-360
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• 2002

Methods for automatic tuning of PID controllers have been on of the results of the active research on control. The proposed controller also is auto-tuning of PID controller The proposed immune algorithm has an uncomplicated structure and memory-cell mechanism as the optimization algorithm which imitates the principle of humoral immune response. We use the proposed algorithm to solve optimization of PID controller parameters. Up to now, the applications of immune algorithm have been optimization problems with non-varying system parameters. Therefore the usefulness of memory-cell mechanism in immune algorithm is without. And research of memory-cell mechanism does not give us entire satisfaction. This paper proposes the immune algorithm using a memory-cell mechanism which can be the application of system with nonlinear varying parameters. To verify performance of the proposed immune algorithm, the speed control of nonlinear DC motor are performed. The results of Computer simulations represent that the proposed immune algorithm shows a fast convergence speed and a good control performances under the varying system parameters.

• Journal of the Semiconductor & Display Technology
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• v.5 no.1 s.14
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• pp.17-20
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• 2006

This paper presents of a new type of memory cell that could potentially replace both DRAM and flash memory. The proposed device cell operates by sensing the state of about 1,000 electrons trapped between unique insulating barriers in the channel region of the upper transistor. These electrons are controlled by a side gate on the transistor, and their state in turn controls the gate of the larger transistor, providing signal gain within the memory cell. It becomes faster and more reliable memory with lower operation voltage. Moreover, the use of a multiple tunnel junction (MTJ) fur the vertical transistor can significantly improve the data retention and operation speed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.10
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• pp.1-8
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• 1999

In this paper, we have studies the transport mechanism and origin of SILC for the various thickness of wet oxide. Also, SILC characteristics of $N_2O$ annealed oxide was included in this study. We made the flash memory cell with $N_2O$ annealed oxide of 60Athick under $0.25{\mu}m$ design rule, and measured the characteristics of the cell. As a result, we have found that the origin of SILC is due to the trap formed inside of the oxide layer by electrical stress. And we reached the conclusion that the transport mechanism of SILC is ruled by the modified F-N tunneling if the electric field is lower than 8MV/cm or typical F-N tunneling if the electric field is higher than 8MV/cm. We could also confirm the fact that $N_2O$ annealed oxide of 60Athick have an improved resistance effect against SILC. In case that we apply $N_2O$ annealed oxide of 60Athick to the flash memory, we could confirm $10^6$ times endurance and more than 10 years drain disturb, and could get 8V programmable flash memory characteristics.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.47 no.7
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• pp.1-7
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• 2010

In this paper, we use the maximum-likelihood detection by the estimation of trellis targets on the 16-level cell NAND flash memory. This mechanism has a performance gain by using a maximum-likelihood detector. The NAND flash memory channel is a memory channel because of the coupling effect. Thus, we use the known data arrays to finding the targets of trellis. The maximum-likelihood detection by proposed scheme performs better than the threshold detection on the 16-level cell NAND flash memory channel.

• Korean Journal of Oriental Medicine
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• v.8 no.1
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• pp.109-126
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• 2002

The herbal extract (YMT_02) is a modified herbal extracts from Yukmijihwangtang (YMJ) to promote memory-enhancing. The YMJ extracts has been widely used as an anti-aging herbal medicine for hundred years in Asian countries. The purpose of this study is to; 1) quantitatively evaluate the memory-enhancing effect of YMT_02 by hehavior task, 2) identify candidate genes responsible for enhancing memory by cDNA microarray and 3) assess the anti-oxidant effect of YMT_02 on PC12 cell. Memory retention abilities are addressed by passive avoidance task with Sprague-Dawley (SD) male rat. Before the training session, the rats are subdivided into four groups and administrated with YMT_02, Ginkgo biloba, Soya lecithin and normal saline for 10 days. The retention test was performed. 24 hours after the training session. The retention time of the YMT_02 group was significantly (p<0.05) delayed $({\sim}100%)$, whereas Ginkgo biloba and Soya lecithin treatment delayed 20% and 10% respectively. The hippocampi of YMT_02 and control group were dissected and mRNA was further purified. After synthesizing cDNA using oligo-dT primer, the cDNA were applied and mRNA was further purified. After synthesizing cDNA using oligo-dT primer, the cDNA were applied to Incyte rat GEMTM 2 cDNA microarray. The microarray results show that prealbumin(transthyretin), phosphotidy lethanolamine N-methyltransferase, and PEP-19 are expressed abundantly in the YMT_02 treated group. Especially, PEP-19 is a neuron-specific protein, which inhibits apoptotic processes in neuronal cell. On the other hand, transcripts of RAB15, glutamate receptor subunit 2 and CDK 108 are abundant in control group. Besides, neuronal genes involved in neuronal death or neurodegeneration such as neuronal-pentraxin and spectrin are abundantly expressed in control group. Additionally, the YMT_02 shows an anti oxidative effect in the PC12 cell. The list of differentially expressed genes may implicate further insight on the action and mechanism behind the memory-enhancing effect of herbal extracts YMT_02, for example, anti-apoptotic, anti-oxidative, and neuroprotective effects.

• Proceedings of the Korean Society of Crop Science Conference
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• 2017.06a
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• pp.175-175
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• 2017

To understand molecular mechanisms underlying adaptation of plant cells to saline stress and stress memory, we developed Arabidopsis callus suspension-cultured cells adapted to high salt. Adapted cells to high salt exhibited enhanced tolerance compared to control cells. Moreover, the salt tolerance of adapted cells was stably maintained even after the stress is relieved, indicating that the acquired salt tolerance of adapted cells was memorized. In order to characterize metabolic responses of plant cells during adaptation to high salt stress as well as stress memory, we compared metabolic profiles of salt-adapted and stress-memorized cells with control cells by using NMR spectroscopy. A principle component analysis showed clear metabolic discrimination among control, salt-adapted and stress-memorized cells. Compared with control cells, metabolites related to shikimate metabolism such as tyrosine, and flavonol glycosides, which are related to protective mechanism of plant against stresses were largely up-regulated in adapted cell lines. Moreover, coniferin, a precursor of lignin, was more abundant in salt-adapted cells than control cells. Cell morphology analysis using transmission electron microscopy indicated that cell wall thickness of salt-adapted cells was significantly induced compared to control cells. Consistently, salt adapted cells contained more lignin in their cell walls compared to control cells. The results provide new insight into mechanisms of plant adaptation to saline stress as well as stress memory in metabolic level.

• The Korean Journal of Physiology and Pharmacology
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• v.21 no.1
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• pp.55-64
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• 2017

Progressive memory impairment such as that associated with depression, stroke, and Alzheimer's disease (AD) can interfere with daily life. In particular, AD, which is a progressive neurodegenerative disorder, prominently features a memory and learning impairment that is related to changes in acetylcholine and abnormal ${\beta}$-amyloid ($A{\beta}$) deposition in the brain. In the present study, we investigated the effects of dehydroevodiamine HCl (DHED) on cognitive improvement and the related mechanism in memory-impaired rat models, namely, a scopolamine-induced amnesia model and a $A{\beta}_{1-42}$-infused model. The cognitive effects of DHED were measured using a water maze test and a passive avoidance test in the memory-impaired rat models. The results demonstrate that DHED (10 mg/kg, p.o.) and Donepezil (1 mg/kg, p.o.) ameliorated the spatial memory impairment in the scopolamine-induced amnestic rats. Moreover, DHED significantly improved learning and memory in the $A{\beta}_{1-42}$-infused rat model. Furthermore, the mechanism of these behavioral effects of DHED was investigated using a cell viability assay, reactive oxygen species (ROS) measurement, and intracellular calcium measurement in primary cortical neurons. DHED reduced neurotoxicity and the production of $A{\beta}$-induced ROS in primary cortical neurons. In addition, similar to the effect of MK801, DHED decreased intracellular calcium levels in primary cortical neurons. Our results suggest that DHED has strong protective effects against cognitive impairments through its antioxidant activity and inhibition of neurotoxicity and intracellular calcium. Thus, DHED may be an important therapeutic agent for memory-impaired symptoms.

• The Journal of the Korea institute of electronic communication sciences
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• v.8 no.1
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• pp.105-111
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• 2013

We have developed an analog associative memory implemented with an analog array which has linear writing and erasing characteristics. The associative memory adopts a winner-take-all strategy. The operation for reading in the memory is executed with an absolute differencing circuit and a winner-take-all (WTA) circuit suitable for a nearest-match function of a content-addressable memory. We also present a system architecture that enables highly-paralleled fast writing and quick readout as well as high integration density. A multiple memory cell configuration is also presented for achieving higher integration density, quick readout, and fast writing. The system technology presented here is ideal for a real time recognition system. We simulate the function of the mechanism by menas of Hspice with $1.2{\mu}$ double poly CMOS parameters of MOSIS fabrication process.