• Economic and Environmental Geology
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• v.33 no.1
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• pp.41-50
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• 2000

Geo-radar survey which has the advantage of high-resolution and relatively fast survey has been widely used for engineering and environmental problems. Three-dimensional effects have to be considered in the interpretation of geo-radar for high-resolution. However, there exists a trouble on the analysis of the three dimensional effects. To solve this problem an efficient three dimension numerical modeling algorithm is needed. Numerical radar modeling in three dimensional case requires large memory and long calculating time. In this paper, a finite difference method time domain solution to Maxwell's equations for simulating electromagnetic wave propagation in three dimensional media was developed to make economic algorithm which requires smaller memory and shorter calculating time. And in using boundary condition Liao absorption boundary. The numerical result of cross-hole radar survey for tunnel is compared with real data. The two results are well matched. To prove application to three dimensional analysis, the results with variation of tunnel's incident angle to survey cross-section and the result when the tunnel is parallel to the cross-section were examined. This algorithm is useful in various geo-radar survey and can give basic data to develop dat processing and inversion program.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.82-85
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• 1998

Because ATM was originally designed for the optical fiber environment with bit error rate(BER) of 10-11, it is difficult to maintain ATM cell extraction capability in wireless environment where BER ranges from 10-6 to 10-3. Therefore, it must be proposed the algorithm of ATM cell extraction in wereless environment. In this paper, the frame structure and synchronization algorithm satisfyling the above condition are explained, and the new ASIC implementation method of this algorithm is proposed. The known method using shift register needs so many gates that it is not suitable for ASIC implementation. But in the proposed method, a considerable reduction in gate count can be achieved by using random access memory.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.5
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• pp.931-936
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• 2009

Classification problem plays a major role in grouping of the records in database systems, detection of faults in VLSI circuits, image processing, and so on. In this paper, we propose the algorithm constructing D1-MACA as a two-class classifier with minimum memory for given pattern sets using the concepts of subspace. Also we analyze the condition that is designed a two-class classifier D1-MACA with two attractors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.347-347
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• 2010

In other to progress better crystallization transition and long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10 wt%, 20 wt% and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Korean Journal of Child Studies
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• v.24 no.2
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• pp.1-14
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• 2003

In this test for the effect of misinformation and mental reinstatement on accuracy of recall in children, misinformation or neutral informations was presented to each of 80 five- and 80 nine - year - old children(Total : 160). Two days later they were asked to recall original information in one of two conditions; free recall or mental reinstatement. For 5-year-old children, mental reinstatement enhanced memory performance and increased the accuracy despite the presentation of misinformation. For 9-year-old children, there was no significant difference between free recall and mental reinstatement condition. For younger children, mental reinstatement may be an effective way of enhancing memory performance.

• Journal of Advanced Marine Engineering and Technology
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• v.30 no.8
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• pp.927-933
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• 2006

The structural and electrical characteristics of PLZT thin films fabricated onto $Pt/IrO_2/Ir/Ti/SiO_2/Si$ substrates by a pulsed laser deposition were investigated to develop the high dielectric thin films for capacitor layer of semiconductor memory devices The slim region 14/50/50 PLZT thin films were fabricated by PLD and estimated the characteristics for memory application 14/50/50 PLZT thin films have crystallize into perovskite structure at the $600^{\circ}C$ deposition temperature, 200 mTorr of oxygen pressure, and 2 $J/cm^2$ of laser energy density. In this condition PLZT thin films had the dielectric constant as high as 985, storage charge density 8.17 ${\mu}C/cm^2$ and charging time 0.20 ns. Leakage current density was less than $10^{-10}A/cm^2$ up to 5 V bias voltage.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.129-132
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• 2017

We report a chemical vapor deposition approach and optimized growth condition to the synthesis of single layer molybdenum disulfide ($MoS_2$). Obtaining large grain size with continuous $MoS_2$ atomically thin films is highly responsible to the growth distance between molybdenum trioxide source and receiving silicon substrate. Experimental results indicate that triangular shape $MoS_2$ grain size could be enlarged up to > 80um with the precisely controlled the source-to-substrate distance under 7.5 mm. Furthermore, we demonstrate fabrication of a memory device by employing poly(methyl methacrylate) (PMMA) as insulating layer. The fabricated devices have a PMMA-$MoS_2$/metal configuration and exhibit a bistable resistance switching behavior with high/low-current ratio around $10^3$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.725-728
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• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, We have systematically investigated the variation of grain sizes depending on the process condition of two-step process. Both in-situ annealing and ex-annealing have been compared depending on the annealing time. C-V measurement, ferroelectric properties, leakage current, XRD and SEM were performed to investigate the electircal properties and microstructural properties of Pb(La, Ti)O$_3$ films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.181-182
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• 2011

Phase-change materials can be cycled by exposure to laser beam, and as a function of the pulse intensity and duration, the laser beam triggers the switching from crystalline to amorphous phase and back. In other to progress better crystallization transition and amorphization long phase-transformation data of phase-change memory (PRAM), we investigated about the effect of Sb doping and Ag ions percolating into Ge-Se-Te phase-change material. Doped Sb concentrations was determined each of 10, 20 and 30 wt%. As the Sb-doping concentration was increased, the resistivity decreased and the crystallization temperature increased. Ionization of Ag was progressed by DPSS laser (532 nm) for 1 hour. The resistivity was more decreased and the crystallization temperature was more increased in case of adding Ag layer under Sb-(Ge-Se-Te) thin film. At the every condition of thin films included Ag layer more stable states were indicated compare with just Sb-doped Ge-Se-Te thin films.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.861-864
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• 2000

Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.