• Title/Summary/Keyword: matching circuit

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A Study on Implementation and Performance Evaluation of Wideband Receiver for the INMARSAT-B Satellite Communications System (INMARSAT-B형 위성통신용 광대역 수신단 구현 및 성능평가에 관한 연구)

  • 전중성;임종근;김동일;김기문
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.5 no.1
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    • pp.166-172
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    • 2001
  • A RF wideband receiver for INMARSAT-B satellite communications system was composed of low noise amplifier and high gain amplifier, The low noise amplifier used to the resistive decoupling circuit for input impedance matching and self-bias circuits for low noise. The high gain amplifier consists of matched amplifier type to improve receiver gain. The active bias circuit can be used to provide temperature stability without requiring the large voltage drop or relatively high-dissipated power needed with a bias stabilization resistor. The bandpass filter was used to reduce a spurious level. As a result, the characteristics of the receiver implemented here show more than 60 dB in gain and less than 1.8:1 in input and output voltage standing wave ratio(VSWR), especially the carrier to noise ratio which is input signal level -126.7 dB m at 1537.5 MHz is a 45.23 dB /Hz at a 1.02 kHz.

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Design of a Wideband Double-sided Dipole Array Antenna for a 3.5 GHz band (3.5 GHz대역용 광대역 양면 다이폴 배열 안테나 설계)

  • Kim, GunKyun;Kang, Nyoung-Hak;Rhee, Seung-Yeop;Lee, Jong-Ig;Yeo, Junho
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2018.05a
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    • pp.61-62
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    • 2018
  • In this paper, we studied a wideband double-sided dipole antenna operating at 3.5 GHz (WiMAX) band. The each printed dipoles are placed on the both sides of the substrate. It can be easily implemented and is suitable for connection with an active circuit. In order to obtain wideband printed dipole characteristics, thick rectangular shaped dipole is adopted. Feeding Circuit for dipole array and balun were designed for impedance matching with a $50{\Omega}$ microstrip feed line. The antenna is designed by simulation for an operation in the frequency range of 3.4~3.7 GHz Simulation results show that the maximum gain in the 3.5 GHz band is 5.5 dBi and the bandwidth with VSWR less than 2 is about 1 GHz.

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A Digital Automatic Gain Control Circuit for CMOS CCD Camera Interfaces (CMOS CCD 카메라용 디지털 자동 이득 제어 회로)

  • 이진국;차유진;이승훈
    • Journal of the Korean Institute of Telematics and Electronics C
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    • v.36C no.5
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    • pp.48-55
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    • 1999
  • This paper describes automatic gain control circuit (AGC) design techniques for CMOS CCD camera interface systems. The required gain of the AGC in the proposed system is controlled directly by digital bits without conventional extra D/A converters and the signal settling behavior is almost independent of AGC gain variation at video speeds. A capacitor-segment combination technique to obtain large capacitance values considerably improves the effective bandwidth of the AGC based on switched-capacitor techniques. A proposed layout scheme for capacitor implementation shows AGC matching accuracy better than 0.1 %. The outputs from the AGC are transferred to a 10b A/D converter integrated on the same chip. The proposed AGC is implemented as a sub-block of a CCD camera interface system using a 0.5 um n-well CMOS process. The prototype shows the 32-dB AGC dynamic range in 1/8-dB steps with 173 mW at 3 V and 25 MHz.

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The Design and implementation of a Low Noise Amplifier for DSRC using GaAs MESFET (GaAs MESFET을 이용한 DSRC용 LNA MMIC 설계 및 구현)

  • Moon, Tae-Jung;Hwang, Sung-Bum;Kim, Byoung-Kook;Ha, Young-Chul;Hur, Hyuk;Song, Chung-Kun;Hong, Chang-Hee
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.61-64
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    • 2002
  • We have optimally designed and implemented by a monolithic microwave integrated circuit(MMIC) the low noise amplifier(LNA) of 5.8GHz band composed of receiver front-end(RFE) in a on-board equipment system for dedicated short range communication using a depletion-mode GaAs MESFET. The LNA is provided with two active devices, matching circuits, and two drain bias circuits. Operating at a single supply of 3V and a consumption current of 18㎃, The gain at center frequency 5.8GHz is 13.4dB, Noise figure(NF) is 1.94dB, Input 3rd order intercept point(lIPS) is 3dBm, and Input return loss(5$_{11}$) and Output return loss(S$_{22}$) is -l8dB and -13.3dB, respectively. The circuit size is 1.2$\times$O.7$\textrm{mm}^2$.EX>.>.

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Development of Power Driver for PVDF Film Actuator Applied to Dehydration of Dredged Sediment (준설토 탈수에 적합한 PVDF Film Actuator 구동용 파워 드라이버 개발)

  • Kim, Dae-Sun;Kim, Min-Kyu;Kim, Young-Uk;Kim, Jung-Kuk
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.49 no.2
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    • pp.26-37
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    • 2012
  • In this study, a power driver for actuating PVDF film that has the characteristic of dramatic impedance change caused by size and operating frequency variation was developed to dehyance rate of dredged sediment. In order to supply maximum energy to the PVDF film, a full-bridge circuit implemented using IGBT with a R-L-PVDF film impedance matching circuit was designed and constructed. the dehydration capabilities of the PVDF film actuated by the developed driver cleary was tested for dredged sediment. It was found that the PVDF film actuated by the developed driver cleary enhanced dehydration, avout three times faster during the first 3 minutes, compared to natural dehydration. The result of the experiment confirmed that the developed power driver for actuating Pvdf film could be used effectively for dehydration of dredged sediment.

Characteristics Analysis of Class E Frequency Multiplier using FET Switch Model (FET 스위치 모델을 이용한 E급 주파수 체배기 특성 해석)

  • Joo, Jae-Hyun;Koo, Kyung-Heon
    • Journal of Advanced Navigation Technology
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    • v.15 no.4
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    • pp.596-601
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    • 2011
  • This paper has presented research results for the switching mode class E frequency multiplier that has simple circuit structure and high efficiency. Frequency multiplication is coming from the nonlinearity of the active component, and this paper models the FET active component as a simple switch and some parasitics to analyze the characteristics. The matching component parameters for the class E frequency doubler have been derived with modeling the FET as a input controlled switch and some parasitics. A circuit simulator, ADS, is used to simulate the output voltage and current waveform and efficiency with the variation of the parasitic values. With 2.9GHz input and 2V bias, the drain efficiency has been decreased from 98% to 28% with changing the parasitic capacitance from 0pF to 1pF at 5.8GHz output, which shows that the parasitic capacitance CP has the most significant effect on the efficiency among the parasitics of FET.

On a Modified Structure of Taper Type Planar Power Divider/Combiner at 2 GHz (2 GHz 평면 테이퍼형 전력 분배/결합회로의 수정된 구조 연구)

  • 한용인;김인석
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.10
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    • pp.1005-1016
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    • 2002
  • In this paper, a 2 GHz tapered shape of multiport power divider/combiner modified from the model published by [10] and adopted PBG(Photonic Band Gap) structure is proposed. Parameters determining electrical property of the circuit structure have been analyzed by HFSS simulation. For input matching, balance of output signals and phase linearity at each output port, one circular hole has been etched out on the circuit surface. 1:2 and 1:3 power dividers/combiners designed by this study have been compared with the same circuits designed by the method of [10] in terms of S-parameters. As a result, it has been found that tile modified structure and PBG of power divider/combiner have improved return loss more than 20 dB and another 18 dB. respectively, at 2 GHz.

40channel Arrayed Waveguide Grating with O.75delta% Refractive Index (0.75Δ% 굴절율차를 가진 40채널 광파장 다중화 및 역다중화 소자 제작 및 특성)

  • Moon, H.M.;Choi, G.S.;Lee, K.H.;Kim, D.H.;Lee, J.H.;Lee, D.H.;Oh, J.K;Kwak, S.C.;Kwon, O.K.;Kang, D.S.;Choi, J.S.;Jong, G;Lee, H.Y.
    • Korean Journal of Optics and Photonics
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    • v.16 no.3
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    • pp.196-200
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    • 2005
  • A 40 channel arrayed-waveguide grating (AWG) filter operating in C-band and L-band wavelength regions has been fabricated using PLC (Planar Lightwave Circuit) processes with 0.75 refractive index difference. Its design was optimized for matching the center wavelength with the ITU-recommended wavelength. The characteristics of the fabricated C-band AWG are as follows; average insertion loss < 2.5 dB, polarization-dependent loss < 0.3 dB, non-adjacent crosstalk >35dB, and the loss uniformity of 0.8 dB. In the L-band AWG, wavelength accuracy is below 0.02nm.

Design of Two-Stage Fully-Integrated CMOS Power Amplifier for V-Band Applications (V-대역을 위한 완전 집적된 CMOS 이단 전력증폭기 집적회로 설계)

  • Kim, Hyunjun;Cho, Sooho;Oh, Sungjae;Lim, Wonseob;Kim, Jihoon;Yang, Youngoo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.12
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    • pp.1069-1074
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    • 2016
  • This paper presents a V-band two-stage power amplifier integrated circuit using TSMC 65 nm CMOS process. The simple input, output, and inter-stage matching networks based on passive components are integrated. By compensating for power gain characteristics using a pre-distortion technique, the linearity of the power amplifier was improved. The implemented two-stage power amplifier showed a power gain of 10.4 dB, a saturated output power of 9.7 dBm, and an efficiency of 20.8 % with a supply voltage of 1 V at the frequency band of 58.8 GHz.

Co-Location and Analysis of an eLoran Transmitting Antenna in an MF Transmitting Site (중파방송 송신소 내 eLoran용 송신 안테나 동일 장소 배치 및 분석)

  • Kim, Ki-nam;Mok, Ha-kyun;Koo, Hanni;Nam, Sangwook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.12
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    • pp.1053-1058
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    • 2016
  • The eLoran(enhanced Long Range Navigation) transmitting antenna is analyzed for co-location with an AM transmitting antenna in an MF transmitting site. To compensate for the loading effect, the umbrella-type loading is applied for eLoran antenna. The validity of the co-location between the MF antenna and the eLoran antenna is verified through the simulation results of the radiation pattern and the return loss. Also, coupling including antenna matching circuit is analyzed to verify the effect of the transmitting circuit. The coupling between the LF and eLoran antenna is -53.3 dB at 100 kHz and -64.8 dB at 1,053 kHz, respectively.