• Title/Summary/Keyword: matching circuit

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Design of Multi-Band Low Noise Amplifier Using Switching Transistors for 2.4/3.5/5.2 GHz Band (스위칭 트랜지스터를 이용하여 2.4/3.5/5.2 GHz에서 동작하는 다중 대역 저잡음 증폭기 설계)

  • Ahn, Young-Bin;Jeong, Ji-Chai
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.2
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    • pp.214-219
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    • 2011
  • This paper presents a multi-band low noise amplifier(LNA) with switching operation for 2.4, 3.5 and 5.2 GHz bands using CMOS 0.18 um technology. The proposed circuit uses switching transistors to achieve the input and output matching for multi-band. By using the switching transistors, we can adjust the transconductance, gate inductance and gatesource capacitance at input stage and total output capacitance at output stage. The proposed LNA exhibits gain of 14.2, 12 and 11 dB and noise figure(NF) of 3, 2.9 and 2.8 dB for 2.4, 3.5 and 5.2 GHz, respectively.

Design of UWB CMOS Low Noise Amplifier Using Inductor Peaking Technique (인덕터 피킹기법을 이용한 초광대역 CMOS 저잡음 증폭기 설계)

  • Sung, Young-Kyu;Yoon, Kyung-Sik
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.17 no.1
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    • pp.158-165
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    • 2013
  • In this paper, a new circuit topology of an ultra-wideband (UWB) 3.1-10.6GHz CMOS low noise amplifier is presented. The proposed UWB low noise amplifier is designed utilizing RC feedback and LC filter networks which can provide good input impedance matching. In this design, the current-reused topology is adopted to reduce the power consumption and the inductor-peaking technique is applied for the purpose of bandwidth extension. The performance results of this UWB low noise amplifier simulated in $0.18-{\mu}m$ CMOS process technology exhibit a power gain of 14-14.9dB, an input matching of better than -10.8dB, gain flatness of 0.9dB, and a noise figure of 2.7-3.3dB in the frequency range of 3.1-10.6GHz. In addition, the input IP3 is -5dBm and the power consumption is 12.5mW.

High Power W-band Power Amplifier using GaN/Si-based 60nm process (GaN/Si 기반 60nm 공정을 이용한 고출력 W대역 전력증폭기)

  • Hwang, Ji-Hye;Kim, Ki-Jin;Kim, Wan-Sik;Han, Jae-Sub;Kim, Min-Gi;Kang, Bong-Mo;Kim, Ki-chul;Choi, Jeung-Won;Park, Ju-man
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.22 no.4
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    • pp.67-72
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    • 2022
  • This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

The variable power divider circuit to use the ring-hybrid coupler (링-하이브리드 커플러를 이용한 가변 전력 분배기 회로)

  • Park, Ung-hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.2
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    • pp.253-259
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    • 2016
  • This paper introduces a new variable power divider circuit with an arbitrary power division ratio ranging from $1:{\infty}$ to ${\infty}:1$. The proposed power divider circuit consists of one branch-line coupler to be a good input matching characteristic, two variable phase shifters with 90-degree phase variation to be connected two output paths of the branch-line coupler, and one ring-hybrid coupler to combine output signals of two variable phase shifter. The power division ratio between the two output ports of the proposed power divider can be easily controlled by the phase variation of the two phase shifter. The proposed power divider circuit fabricates on laminated RF-35 (h = 20 mil, er=3.5; Taconic) with a center frequency of 2 GHz. The power division ratio of the fabricated prototype varies from about 1:1000 to 5000000:1, with an input reflection characteristic(S11) of below -20 dB, an insertion loss of about -1.0 dB, and an isolation characteristic of below -17 dB between two output ports in the range 1.9-2.1 GHz.

An Omnidirectional High Gain Antenna for UHF Band Ground Station (UHF대역 지상국용 무지향 고이득 안테나)

  • Bae, Ki-Hyoung;Chang, Min-Soo;Joo, Jae-Woo;Hwang, Chan-Ho;Hong, Ki-Pyo
    • Journal of the Korea Knowledge Information Technology Society
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    • v.12 no.4
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    • pp.539-550
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    • 2017
  • In this paper, we designed, fabricated and tested an UHF band cylindrical dipole array antenna. In the proposed antenna, cylindrical dipoles were vertically arranged in four stages. A parallel structure feeding circuit was installed inside the cylindrical dipole and mounted so as to be broadband matching. The feeding circuit was installed at the center of the cylindrical dipole to optimize the gain flatness characteristic of the azimuth direction omnidirectional radiation pattern. Minimizing the difference between the signals branched from the feeding circuit and realizing the symmetry of the radiation pattern. The required specifications are more than 11.2% bandwidth in UHF band, above 6dBi antenna gain, standing wave ratio of 2:1 or less, less than ${\pm}1dB$ gain flatness in azimuth radiation pattern, more than 13 degrees in elevation radiation pattern of 3dB beamwidth. We confirmed the possibility of implementation through M&S and verified the result of M&S through production and testing. The test results are 11.2% bandwidth in the UHF band, 6.30 to 8.31 dBi gain, 1.53:1 standing wave ratio or less, within ${\pm}0.2dB$ gain flatness in the azimuth radiation pattern, elevation radiation pattern of 3dB beam width was 15.62 to 15.84 degrees. The test result meets all requirements specifications.

Design & Fabrication of an InGaP/GaAs HBT MMIC Power Amplifier for IMT-2000 Handsets (IMT-2000 단말기용 InGaP/GaAs HBT MMIC 전력증폭기 설계 및 제작)

  • 채규성;김성일;이경호;김창우
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.28 no.11A
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    • pp.902-911
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    • 2003
  • Using InGaP/GaAs HBT power cells with a 2.0${\times}$20$\mu\textrm{m}$$^2$ emitter area of a unit HBT, a two stage MMIC power amplifier has been developed for IMT-2000 handsets. An active-bias circuit has been used for temperature compensation and reduction in the idling current. Fitting on measured S-parameters of the HBT cells, circuit elements of HBT's nonlinear equivalent model have been extracted. The matching circuits have been designed basically with the extracted model. A two stage HBT MMIC power amplifier fabricated using ETRI's HBT process. The power amplifier produces an 1-㏈ compressed output power(P$\_$l-㏈/) of 28.4 ㏈m with 31% power added efficiency(PAE) and 23-㏈ power gain at 1.95 GHz in on-wafer measurement. Also, the power amplifier produces a 26 ㏈m output power, 28% PAE and a 22.3-㏈ power gain with a -40 ㏈c ACPR at a 3.84 ㎒ off-center frequency in COB measurement.quency in COB measurement.

Study on Characteristics of ECG Electrodes for Motion Artifact Reduction (동잡음 저감을 위한 심전도 전극 특성에 대한 연구)

  • Kang, Young-Hwan;Park, Jae-Soon;Cho, Bum-Ki;Choi, Sang-Dong;Joung, Yeun-Ho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.30 no.6
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    • pp.366-371
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    • 2017
  • In this paper, we introduce an electrocardiogram (ECG) system designed to solve problems caused by wetgels and motion artifacts in measuring active movement. The system is called a dry-contact ECG and was designed by considering impedance matching between skin and electrode as well as the frictional electricity between electrode and clothes. In order to create the system, we measured impedance on the skin-electrode interface, and the result was applied to the electronic circuit scheme. Moreover, we added an electrode on the back of the measurement electrode to make a flow path to ground the electrical noise. The final ECG circuit and novel electrode were used to detect real human cardiac signals from a subject who was tested while standing still and walking. The signals obtained from the two activities were nicely shaped, without any motion artifact noise. We took electrode size into account in this study because the impedance depended on the area of the electrode. An electrode of 50 mm diameter showed the best curve for the ECG signal without any electrical noise.

A 900 MHz Zero-IF RF Transceiver for IEEE 802.15.4g SUN OFDM Systems

  • Kim, Changwan;Lee, Seungsik;Choi, Sangsung
    • ETRI Journal
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    • v.36 no.3
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    • pp.352-360
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    • 2014
  • This paper presents a 900 MHz zero-IF RF transceiver for IEEE 802.15.4g Smart Utility Networks OFDM systems. The proposed RF transceiver comprises an RF front end, a Tx baseband analog circuit, an Rx baseband analog circuit, and a ${\Delta}{\Sigma}$ fractional-N frequency synthesizer. In the RF front end, re-use of a matching network reduces the chip size of the RF transceiver. Since a T/Rx switch is implemented only at the input of the low noise amplifier, the driver amplifier can deliver its output power to an antenna without any signal loss; thus, leading to a low dc power consumption. The proposed current-driven passive mixer in Rx and voltage-mode passive mixer in Tx can mitigate the IQ crosstalk problem, while maintaining 50% duty-cycle in local oscillator clocks. The overall Rx-baseband circuits can provide a voltage gain of 70 dB with a 1 dB gain control step. The proposed RF transceiver is implemented in a $0.18{\mu}$ CMOS technology and consumes 37 mA in Tx mode and 38 mA in Rx mode from a 1.8 V supply voltage. The fabricated chip shows a Tx average power of -2 dBm, a sensitivity level of -103 dBm at 100 Kbps with PER < 1%, an Rx input $P_{1dB}$ of -11 dBm, and an Rx input IP3 of -2.3 dBm.

Development of the Low Noise Amplifier for Cellular CDMA Using a Resistive Decoupling Circuit (저항 결합회로를 이용한 Cellular CDMA용 저잡음 증폭기의 구현)

  • 전중성;김동일
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.2 no.4
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    • pp.635-641
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    • 1998
  • This paper presents development of a small size LNA operating at 824 ∼ 849 MHz used for a receiver of a CELLULAR CDMA Base station and a transponder. Using resistive decoupling circuits, a signal at low frequency is dissipated by a resistor. This design method increases the stability of the LNA and is suitable for input stage matching. The LNA consists of low noise GaAs FET ATF-10136 and internally matched VNA-25. The LNA is fabricated with both the RF circuit and the self-bias circuits in aluminum housing. As a result, the characteristics of the LNA implemented here shows above 35dB in gain and below 0.9dB in noise figure, 18.6dBm P1dB power, a typical two tone IM3, -31.17dB with single carrier backed off 10dB from P1dB.

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Circuit Model Based Analysis of a Wireless Energy Transfer System via Coupled Magnetic Resonances (결합된 자기공명을 통한 무선에너지 전력 전송 시스템의 회로 해석)

  • Cheon, Sang-Hoon;Kim, Yong-Hae;Lee, Myung-Lae;Kang, Seung-Youl
    • The Transactions of the Korean Institute of Power Electronics
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    • v.16 no.2
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    • pp.137-144
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    • 2011
  • A Simple equivalent circuit model is developed for a wireless energy transfer system via coupled magnetic resonances and a practical design method is also provided. Node equations for the resonance system are built with the method, expanding on the equations for a transformer, and the optimum distances of coils in the system are derived analytically for optimum coupling coefficients for high transfer efficiency. In order to calculate the frequency characteristics for a lossy system, the equivalent model is established at an electric design automation tool. The model parameters of the actual system are extracted and the modeling results are compared with measurements. Through the developed model, it is seen that the system can transfer power over a mid-range of a few meters and impedance matching is important to achieve high efficiency. This developed model can be used for a design and prediction on the similar systems such as increasing the number of receiving coils and receiving modules, etc.