• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.222-222
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• 1999

From extensive measurements of the resistance and the dynamic resistance as functions of magnetic field and temperature, we find that the transport in the insulating state beyond the superconductor-insulator (S-I) transition is dominated by bosons(Cooper pairs and/or vortices) and cannot be described by the theory of the fermionic insulating phase. The maximum of the magnetoresistance at B = B$_m$ and the following negative slope in R(B) with increasing field can be explained by the crossover from the "Bose-glass" to the "Fermi-glass" phase as suggested by Paalanen, Hebard, and Ruel. The zero bias peak in dv/dl for biases below the characteristic voltage V$_c$ (or current $I_c$), gives a clue for the assumption of the "dirty boson" model which states that the insulating state above the critical magnetic field is the phase where Cooper pairs are localized due to the Coulomb blockade with a nonvanishing order parameter. The shift to a lower value of the critical magnetic field by overlaying thin Au layer, which is known as a strong spin-orbit scatterer, also supports the bosonic nature of the S-I transition.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.222-232
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• 2000

The relationship between carrier electron concentration(n) and atmosphere oxygen partial pressure($P_{O_2}$ for pure ZnO calculated by the mass-action law, well-known as n ${\propto}P^{-1/m}_{O_2}$ where m = 4 or 6 for the single or the double ionization of the native donor defects due to its nonstoichiometry, respectively, is found in competition with the calculation result on the basis that the total defect concentration is the sum of those of unionized and ionized defects. Definitively, it is found inconsistent with the calculation result by employing the Fermi-Dirac(FD) statistics for their ionization processes. By application of the FD statistics law to the ionization while assuming the defect formation is still ruled by the mass-action law, the calculation results shows the concentration is proportional to $P^{-1/2}_{O_2}$ whenever they ionize singly and/or doubly. Conclusively we would like to propose the new theoretical relation n ${\propto}P^{-1/m}_{O_2}$ because the ionization processes of donors in ZnO should be treated with the electronoccupation probability at localized quantum states in its forbidden band created by the donor defects, i.e. the FD statistics

• Clinical and Experimental Pediatrics
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• 제45권8호
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• pp.1024-1027
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• 2002

저자들은 급성 복통을 주소로 개인의원을 방문하여 급성 충수염이 의심되어 본원 응급실로 전원 된 5세 남아에서 초음파와 CT로 복막수염으로 진단하고 수술이나 항생제 치료 없이 자연 치유된 복막수염 1례를 보고하는 바이다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.435-435
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• 2011

The electronic structure and various physical properties of CeO2, Ce2O3, PrO2, and Pr2O3 have been studied from the framework of Ab-initio by the all-electron projector-augmented-wave (PAW) method, as implemented VASP (Vienna Ab-initio Simulation Package). The generalized gradient approximation (GGA) with effective U (Ueff) has been used to explain the strong on-site Coulomb repulsion among the localized Ce 4f electrons. The dependence of selected observables of these materials on the Ueff parameter has been scrutinized. The studied properties contain lattice constants, density of states, and reaction energies of CeO2, Ce2O3, PrO2, and Pr2O3. For CeO2 and PrO2, the GGA(PBE)+U results are in good agreement with experimental data whereas for the computational calculationally more demanding Ce2O3 and Pr2O3 both approaches give comparable accuracy. This results represent that by choosing an appropriate Ueff it is possible to reliably describe structural and electronic properties of CeO2, Ce2O3, PrO2, and Pr2O3, which enables modeling of oxygen reduction reaction processes involving ceria-based materials.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2002년도 가을 학술발표회 논문집
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• pp.3.1-14
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• 2002

Many human lives and properties have been damaged by the annually occurring natural disasters. Among them, a typhoon accompanying a gale and a localized torrential downpour induce a first order damages. In this study, states, scales and other characteristics of slope failure induced by the typhoon Rusa, which damaged the whole Korea peninsular on August 30th for 3 days, were analyzed. In addition, permanent measures for slope failure are conducted to prepare natural disasters. Since the key factor on the slope failure is considered to be a rainfall. The characteristics of domestic rainfall and typhoon are investigated, and then failure forms and some characteristics of slope failure are analyzed. By comparing with the data of existing slopes, the hazard of slope failure is examined. There fundamental results could be applied to the future measures of slope failure.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.151-155
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• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• 한국재료학회지
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• 제12권1호
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• pp.94-99
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• 2002

The electrical properties of porous $SiO_2/ITO$ nano thin film were studied by complex impedance and conductive mechanisms were analyzed. According to the results of complex impedance, the activation energy of $SiO_2/ITO$ and $Zn-SiO_2/ITO$ were 0.309 eV, 0.077 eV in below $450^{\circ}C$ and 0.147 eV in over $450^{\circ}C$, respectively. In case of $SiO_2/ ITO$, slightly direct tunneling occurred at room temperature. The contribution for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over $300^{\circ}C$ by Thermally assisted tunneling. In case of $Zn-SiO_2/ITO$, high conductivity in 1.26 ${\Omega}^{ -1}{cdot}cm^{-1}$ at room temperature appeared by space charge conduction or Frenkel-poole emission that Zn ions play a role as localized electron states.

• 한국재료학회지
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• 제20권3호
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• pp.161-166
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• 2010

The ac, dc conductivity and dielectric properties of $DyCoO_3$ were reported in the temperature range of 77 - 300K and in the frequency range of 20 Hz - 100 kHz. It was observed that at low temperature, ac conductivity is much higher than dc conductivity and the hopping carrier between localized states near the Fermi level was the dominant loss mechanism. A comparison of the measured ac conductivity $\sigma(\omega)$ was made with some of the models of hopping conductivity of the proposed earlier in the literature. It was observed that in $DyCoO_3$ the measured ac conductivity, over the entire frequency and temperature region, can be explained reasonably well by assuming two contributions $\sigma_1(\omega)$ and $\sigma_2(\omega)$ to the measured $\sigma(\omega)$. The first, $\sigma_1(\omega)$, which dominates at low temperature, may be due to impurity conduction in a small polaron; the second, $\sigma_2(\omega)$, which dominates at higher temperatures, depending on the frequency of measurements, may be due to the hopping of a small polaron and is reasonable for the dielectric relaxation peak.

• 한국측량학회:학술대회논문집
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• 한국측량학회 2004년도 Korea-Russia Joint Conference on Geometics
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• pp.82-94
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• 2004

This paper addresses solutions to the challenges of carrier phase integer ambiguity resolution and cycle slip detection/identification, for maintaining high accuracy of an integrated GPS/Pseudolite/INS system. Such a hybrid positioning and navigation system is an augmentation of standard GPS/INS systems in localized areas. To achieve the goal of high accuracy, the carrier phase measurements with correctly estimated integer ambiguities must be utilized to update the system integration filter's states. The occurrence of a cycle slip that is undetected is, however, can significantly degrade the filter's performance. This contribution presents an effective approach to increase the reliability and speed of integer ambiguity resolution through using pseudolite and INS measurements, with special emphasis on reducing the ambiguity search space. In addition, an algorithm which can effectively detect and correct the cycle slips is described as well. The algorithm utilizes additional position information provided by the INS, and applies a statistical technique known as the cumulative-sum (CUSUM) test that is very sensitive to abrupt changes of mean values. Results of simulation studies and field tests indicate that the algorithms are performed pretty well, so that the accuracy and performance of the integrated system can be maintained, even if cycle slips exist in the raw GPS measurements.

• Electronic Materials Letters
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• 제14권6호
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• pp.766-773
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• 2018

In this paper, temperature dependence of the excitonic bands in a mechanically exfoliated tungsten diselenide ($WSe_2$) monolayer is studied using photoluminescence and circular dichroic photoluminescence (PL) in the temperature range between 8 and 300 K. The peak energies associated with the neutral exciton (A), charged exciton (trion) and localized excitons are extracted from the PL spectra revealing a trion binding energy of around 30 meV. The circular dichroic PL measured at 8 K shows about 45% valley polarisation that sharply reduces with increasing temperature to 5% at 300 K with photoexcitation energy of 1.96 eV. A detailed analysis of the emission line-width suggests that the rapid decrease of valley polarisation with the increase of temperature is caused by the strong exciton-phonon interactions which efficiently scatter the excitons into different excitonic states that are easily accessible due to the supply of excess photoexcitation energy. The emission line-width broadening with the increase of temperature indicate residual exciton dephasing lifetime < 100 fs, that correlates with the observed rapid valley depolarisation.