Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Electrical Properties of Porous SiO2/ITO Nano Films

다공성 SiO2/ITO 나노박막의 전기적 특성

  • 신용욱 (한국과학기술원 세라믹공정연구센터) ;
  • 김상우 (한국과학기술원 세라믹공정연구센터)
  • Published : 2002.01.01
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Abstract

The electrical properties of porous $SiO_2/ITO$ nano thin film were studied by complex impedance and conductive mechanisms were analyzed. According to the results of complex impedance, the activation energy of $SiO_2/ITO$ and $Zn-SiO_2/ITO$ were 0.309 eV, 0.077 eV in below $450^{\circ}C$ and 0.147 eV in over $450^{\circ}C$, respectively. In case of $SiO_2/ ITO$, slightly direct tunneling occurred at room temperature. The contribution for conduction was very tiny because of high barrier of silica. However, the conductivity abruptly increased in over $300^{\circ}C$ by Thermally assisted tunneling. In case of $Zn-SiO_2/ITO$, high conductivity in 1.26 ${\Omega}^{ -1}{cdot}cm^{-1}$ at room temperature appeared by space charge conduction or Frenkel-poole emission that Zn ions play a role as localized electron states.

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