• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.194-197
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• 2002

Applying dual layer insulator on plastic substrates improved electrical characteristics of organic thin film transistor(TFT). A high-quality silicon dioxide(SiO$_2$) suitable for a insulator was deposited on plastic substrates by e-beam evaporation at 110$^{\circ}C$. The insulator film which was treated by N$_2$ annealing at 150$^{\circ}C$ showed excellent I-V, C-V characteristics. The dual layer insulator structure of polyimide-SiO$_2$ improved the roughness of SiO$_2$ surface and showed very low leakage current. In addition, the flat band voltage has been reduced from -2.5V to about 0.5V.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.6
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• pp.668-675
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• 2013

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp $H_2O_2$ (30%) and 3 vp $CH_3COOH$ (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of $Si_{0.8}Ge_{0.2}$ layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.128-129
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• 2015

Al-rich coatings were prepared on hot rolled low carbon steel by hot dipping method in molten Al-bath to investigate the corrosion resistance with the possible outcomes and defects of aluminized coatings in air and $Ar-0.2%SO_2$ mixed gases. Coating microstructure was composed of an inner Al-Fe intermetallic layer and outer Al-rich layer. Aluminum oxidized preferentially to the thin, outer, protective ${\alpha}-Al_2O_3$ layer, without forming the nonprotective iron/sulfur-oxide layer after heating at $800^{\circ}C$ for 20 h, in both the gases and provided the resistance against corrosion.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.122-122
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• 2015

Al-rich coatings were prepared on hot rolled low carbon steel by hot dipping method in molten Al-bath to investigate the corrosion resistance with the possible outcomes and defects of aluminized coatings in air and $Ar-0.2%SO_2$ mixed gases. Coating microstructure was composed of an inner Al-Fe intermetallic layer and outer Al-rich layer. Aluminum oxidized preferentially to the thin, outer, protective ${\alpha}-Al_2O_3$ layer, without forming the nonprotective iron/sulfur-oxide layer after heating at $800^{\circ}C$ for 20h, in both the gases and provided the resistance against corrosion.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.140-145
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• 2018

Bulky carbon layer uniformly distributed with nanoscale $Fe_2O_3$ was prepared via a direct carbonation of $Fe^{3+}$-polyacrylonitrile complexes at $700^{\circ}C$ under $N_2$ flow. The iron oxide carbon composites exhibited an excellent cycling performance for lithium storage with a reversible capacity of ${\sim}810mAh\;g^{-1}$ after 250 cycles at a current rate of $100mA\;g^{-1}$. The enhancement was mainly attributed to dual functions of bulky carbon layer which facilitated the lithium-ion diffusion and accommodated the volume changes of active $Fe_2O_3$ during charge/discharge process. Our novel chemical strategy is quite effective for scalable fabrication of high capacity lithium-storage materials.

• Medical Lasers
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• v.10 no.4
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• pp.246-249
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• 2021

The carbon dioxide (CO₂) laser is one of the treatment options used for xanthelasma palpebrarum. However, even if the full dermal layer is removed, the lesion can recur due to the residual lipid deposits. A 44-year-old male patient with xanthelasma on both upper eyelids was treated with a pulsed dye CO₂ laser. On the right upper eyelid, we carried out a CO₂ laser treatment until the yellowish plaque was almost invisible and the full thickness of the dermal layer was removed. On the left upper eyelid, the dermal layer was partially removed and an additional squeezing out of yellowish particles was done. The lesion treated by the squeezing out of lipid droplets showed better long-term results than the lesion treated up to the deeper dermal layer.

• Journal of the Korean Vacuum Society
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• v.17 no.6
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• pp.560-565
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• 2008

$(Pb_{0.98}La_{0.08})(Zr_{0.65}Ti_{0.35})O_3$ (PLZT) thin films with $TiO_2$ buffer layers were deposited on Pt/Ti/$SiO_2$/Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of $TiO_2$ buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of $TiO_2$ layers, thereby reaching their maximum at $600^{\circ}C$.

• Restorative Dentistry and Endodontics
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• v.31 no.3
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• pp.169-178
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• 2006

This study was to verify that the combined application of NaOCl and EDTA was more effective in removal of smear layer than the application of NaOCl alone. furthermore it was aimed to find out the optimal time for the application of EDTA. Thirty five single rooted teeth were cleaned and shaped. NaOCl solution was used as an irrigant during instrumentation. After instrumentation, root canals of the control group were irrigated with 5 ml of NaOCl for 2 minutes. 30 sec, 1 min, and 2 min group were irrigated with 5 ml of 17% EDTA for 30 sec, 1 min, and 2 min respectively. Then the roots were examined with scanning electron microscopy for evaluating removal of smear layer and erosion of dentinal tubule. The results were as follows; 1. The control group: The smear layer was not removed at all. 2. The other groups: 1) $Middle\frac{1}{3}$: All groups showed almost no smear layer. And the erosion occurred more frequently as increasing irrigation time. 2) $Apical\frac{1}{3}$: The cleaning effect of 2 min group was better than the others. The results suggest that 2 min application of 17% EDTA should be adequate to remove smear layer on both $apical\frac{1}{3}\;and\;middle\frac{1}{3}$.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.1
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• pp.1-5
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• 2003

The multi-layered OELDs(organic electroluminescent devices) were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The $Alq_3$ (tris-(8-hydroxyquinoline)aluminum) low molecule compound was used as the light emission layer. TPD(triphenyl-diamine) and $\alpha-NPD$ were used as the hole transport layer. CuPc (Copper phthalocyanine) was also used as the hole injection layers. In addition, QD2 (quinacridone2) organic material with $10\AA$ thickness was deposited in the $Alq_3$ emission layer to improve the luminance efficiency. The threshold voltage was about 7V for all devices. The luminance and efficiency of devices was improved by substitution the $\alpha-NPD$ for TPD as the hole as the hole transport layer. The luminance efficiency of the OELD sample with QD2 thin film in the $Alq_3$ emission layer was found to be 1.55 lm/W, which is about 8 times larger value compared to the sample without QD2 thin layer.

• Current Photovoltaic Research
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• v.3 no.2
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• pp.54-60
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• 2015

ZnSnO thin films were deposited by atomic layer deposition (ALD) process using diethyl zinc ($Zn(C_2H_5)_2$) and tetrakis (dimethylamino) tin ($Sn(C_2H_6N)_4$) as metal precursors and water vapor as a reactant. ALD process has several advantages over other deposition methods such as precise thickness control, good conformality, and good uniformity for large area. The composition of ZnSnO thin films was controlled by varying the ratio of ZnO and $SnO_2$ ALD cycles. The ALD ZnSnO film was an amorphous state. The band gap of ZnSnO thin films increased as the Sn content increased. The CIGS solar cell using ZnSnO buffer layer showed about 18% energy conversion efficiency. With such a high efficiency with the ALD ZnSnO buffer and no light soaking effect, AlD ZnSnO buffer mighty be a good candidate to replace Zn(S,O) buffer in CIGSsolar cells.