JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Selective Chemical Wet Etching of Si0.8Ge0.2/Si Multilayer

  • Kil, Yeon-Ho (Semiconductor Physics Research Center, Chonbuk National University) ;
  • Yang, Jong-Han (Semiconductor Physics Research Center, Chonbuk National University) ;
  • Kang, Sukil (Semiconductor Physics Research Center, Chonbuk National University) ;
  • Jeong, Tae Soo (Semiconductor Physics Research Center, Chonbuk National University) ;
  • Kim, Taek Sung (Semiconductor Physics Research Center, Chonbuk National University) ;
  • Shim, Kyu-Hwan (Semiconductor Physics Research Center, Chonbuk National University)
  • Received : 2013.06.03
  • Accepted : 2013.10.01
  • Published : 2013.12.31
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Abstract

We investigate the effect of the ageing time and etching time on the etching rate of SiGe mixed etching solution, namely 1 vp HF (6%), 2 vp $H_2O_2$ (30%) and 3 vp $CH_3COOH$ (99.8%). For this etching solution, we found that the etch rate of SiGe layer is saturated after the ageing time of 72 hours, and the selectivity of $Si_{0.8}Ge_{0.2}$ layer and Si layer is 20:1 at ageing time of 72 hours. The collapse was appeared at the etching time of 9min with etching solution of after saturation ageing time.

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References

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