JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Fluorine Effect of Direct Contact Process in High-Doped Boron Phosphorus Silicate Glass (BPSG)

  • Kim, Hyung-Joon (Yield Enhancement Team, Memory Division, Samsung Electronics Co.) ;
  • Choi, Pyungho (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kim, Kwangsoo (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Choi, Byoungdeog (College of Information and Communication Engineering, Sungkyunkwan University)
  • Received : 2012.12.21
  • Accepted : 2013.09.06
  • Published : 2013.12.31
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Abstract

The effect of fluorine ions, which can be reacted with boron in high-doped BPSG, is investigated on the contact sidewall wiggling profile in semiconductor process. In the semiconductor device, there are many contacts on $p^+/n^+$ source and drain region. However these types of wiggling profile is only observed at the $n^+$ contact region. As a result, we find that the type of plug implantation dopant can affect the sidewall wiggling profile of contact. By optimizing the proper fluorine gas flow rate, both the straight sidewall profile and the desired electrical characteristics can be obtained. In this paper, we propose a fundamental approach to improve the contact sidewall wiggling profile phenomena, which mostly appear in high-doped BPSG on next-generation DRAM products.

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References

  1. M. Fanciulli, E. Bonera, E. Carollo, L. Zanotti, "EPR and UV-Raman study of BPSG thin films: structure and defects," Microelectronic Engineering, Vol.55, pp.65-71, 2001. https://doi.org/10.1016/S0167-9317(00)00430-5
  2. Jagadeesha T, Louis Kim, Wei Ti Lee, and Thammaiah Gowda, "Development of new BPSG process to reduce boron concentration range in BPSG SACVD processes," International Journal of Engineering Science and Technology, Vol.3, No.1, pp.156-161, Jan., 2011.
  3. R. Fuller, H. Evans, C. Gamlen, B. Czagas, M. Morrison, D. Decrosta, and R. Lowry, "The Effect of Deposition Conditions on the Radiation Tolerance of BPSG Films," IEEE Transactions on Nuclear Science, Vol.43, No.6, pp.2565-2571, Dec., 1996. https://doi.org/10.1109/23.556837
  4. Mary Tiemessen, Ping Wang, Paul Oakey, Lisa Liu, Stephen Schauer and Carl Bowen, "Fluorine Induced Formation of Intermetal Dielectric Defects," IEEE/SEMl Advanced Semiconductor Manufacturing Conference, pp.303-307, 1996.
  5. Yuan Taur, Jack Yuan-Chen Sun, Dan Moy, L. K. Wang, Bijan Davari, Tephen P. Klepner, and Chung-Yu Ting, "Source-Drain Contact Resistance in CMOS with Self-Aligned TiSi," IEEE Transaction on Electron Devices, Vol.34, No.3, pp575-580, 1987. https://doi.org/10.1109/T-ED.1987.22965
  6. B. E. E. Kastenmeier, P. J. Matsuo, and G. S. Oehrlein, "Remote plasma etching of silicon nitride and silicon dioxide using $NF_3/O_2$ gas mixtures," Journal of Vacuum Science and Technology A, Vol.16, No.4, pp.2047-2056, 1998. https://doi.org/10.1116/1.581309
  7. S.Y. Lee, J.B. Yoon, Samsung Internal Technical Report, 2002 [in Korean].
  8. K. H. Lau and D. L. Hildenbrand, "Thermochemical studies of the $BF_2$ radical," Journal of Chemical Physics, Vol.72, No.9, pp.4928-4931, May., 1980. https://doi.org/10.1063/1.439777
  9. Arvind Sankaran and Mark J. Kushner, "Fluorocarbon plasma etching and profile evolution of porous low-dielectric-constant silica," Applied Physics Letters, Vol.82, No.12, pp.1824-1826, Mar., 2003. https://doi.org/10.1063/1.1562333
  10. R. Charavel and J. P. Raskin, "Etch Rate Modification of $SiO_2$ by Ion Damage," Electrochemical and Solid-State Letters, Vol. 9, No. 7, pp.G245-G247, 2006. https://doi.org/10.1149/1.2200307
  11. T.W. Graham Solomons and Craig B. Fryhle: Organic Chemistry (John Wiley & Sons, NJ, 2009) 10th ed., p. 39.