• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.138-147
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• 2008

$SiO_2/TiO_2/ZrO_2$ broadband anti-reflective multi-layer thin films were prepared at room temperature by RF sputtering system. Optical constants and structural properties on each layer of films were analyzed by spectroscopic ellipsometer and transmittance spectra of the films were measured by $UV-V_{is}$ spectrophotometer in the range of 300$\sim$900 nm. To evaluate the films, we compared the measured and analyzed spectra with designed spectra. We investigated influence of discrepancy of thickness and refractive indices of each layer on changes of the transmittance spectra. It was found that refractive indices and shape of dispersion of deposition materials are more contributed to changes of the transmittance spectra than thickness of layer.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.110.1-110.1
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• 2012

Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.240.2-240.2
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• 2013

The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

• Journal of the Korea Institute of Information Security & Cryptology
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• v.18 no.1
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• pp.59-65
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• 2008

In security layer in the CDMA2000 1x EV-DO, a standard - C.S0024-a v2.0 is being accomplished under the project of 3GPP2(3rd Generation Partnership Project2). Therefore, a security device is needed to implement the security layer which is defined on the standard document for data transfer security between AT(Access Terminal) and AN(Access Network) on CDMA2000 1x EV-DO environment. This paper realizes the security layer system that can make safe and fast transfer of data between AT and AN. It could be applied to various platform environments by designing and implementing the Security Layer in the CDMA2000 1x EV-DO Security Layer to which applies C.S0024-A v2.0 of 3GPP2.

• Textile Coloration and Finishing
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• v.12 no.2
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• pp.89-95
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• 2000

Effect of twist-setting time, temperature and cylinder layer for the physical properties of the twist yarn were investigated by separated 9 layer from yarn cylinder. Obtained results were as follow. Shrinkage of the yarn in middle layer shows high value with heat-permeation and in inner's shows low value because of cylinder hardness. And then yarn thermal shrinkage in outer layers shows more or less high value because twist yarn in the outer layer sets more faster. Concerning to the difference on the yam physical properties among cylinder layers, the changes on physical properties shows significant differences from the 7th layer to the last one. Linear density, T.P.M and initial modulus decreases but snarl index increases.

• Proceedings of the KSR Conference
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• 2007.05a
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• pp.1735-1740
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• 2007

Communication network in KTX (Korea Train eXpress), the express train system, has to transmit status variables periodically within tens of seconds and real-time control informations which has short reply like status transition or alarm. KTX uses $Tornad^*$ (TOken Ring Network Alsthom Device) network for this purpose. This network can send and receive messages which enable express train applications embedded in intelligence boards to communicate by itself. Layer 1, 2 of $Tornad^*$ is implemented with differential manchester encoding and IEEE 802.4 standard(token bus standard) respectively. To implement layer 1 and 2, we implemented twisted pair modem using FPGA for layer 1 and used MC68824 from Motorola for layer 2. MC68824 bus arbitration and memory controller is implemented using CPLD.

• ETRI Journal
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• v.37 no.6
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• pp.1129-1134
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• 2015

In this article, a study of a flower like nanostructured CdS buffer layer for improving the performance of a submicron-thick $CuIn_{1-x}Ga_xSe_2$ (CIGS) solar cell (SC) is presented. Both its synthesis and properties are discussed in detail. The surface reflectance of the device is dramatically decreased. SCs with flower like nanostructured CdS buffer layers enhance short-circuit current density, fill factor, and open-circuit voltage. These enhancements contribute to an increase in power conversion efficiency of about 55% on average compared to SCs that don't have a flower like nanostructured CdS buffer layer, despite them both having the same CIGS light absorbing layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.8
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• pp.678-681
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• 2011

We have investigated the effect of organic thin film on the driving voltage of OLED (organic light emitting diode) by inserting a 5 nm thick 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or triphenylphosphineoxide ($Ph_3PO$) between tris-(8-hydroxyquinoline)aluminum ($Alq_3$) electron transport layer and 4,4'-bis(2,2'-diphyenylvinyl)-1,1'-biphenyl (DPVBi) emission layer. The device with 5 nm thick $Ph_3PO$ layer exhibited higher maximum current efficiency and lower driving voltage than the device with BCP layer, resulting from better electron injection from $Alq_3$ to DPVBi in the device with $Ph_3PO$ layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.2
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• pp.113-119
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• 2003

We report the electrical properties of copper(II)-phthalocyanine(Cu-Pc) as a hole injaction layer in organic light-emitting diode (OLED). OLEDs were constructed by the following material structure : indium tin oxaide (ITO)/ CuPc/ triphenyl-diamine (TPD)/ tris-(8-hydroxyquinoline)aluminum (Alq3)/4-(Dicyanomethlene)-2-methyl-6-(4-dimethylaminostyryl)-4H-pyran (DCM)/ Al. we observed that the change of recombination zone by using a DCM detection thin layer (6 ${\AA}$) in a Alq$_3$ emitting layer. layer. Recombination zone was moved toward the cathode as the hole mobility increased due to the heat-treatment temperature of cupc layer increased.

• Proceedings of the Korea Multimedia Society Conference
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• 2002.05c
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• pp.303-307
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• 2002

디지털 영상압축 방법인 ITU-T H.263++ 부호화기법 중에는 계층 모드(scalability mode)를 지원한다. 계층 모드는 한 개의 송신 영상에 대해서도 복호기와 전송로에 따라서 여러 가지 화질의 재생 영상을 얻을 수 있게 한다. 계층 모드는 시간적, 공간적, SNR(signal-to-noise ratio)로 나누어진다. 그 중에서 SNR 계층 모드는 고급계층에 따라서 다양한 해상도를 가질 수 있다. 계층부호화에는 크게 기본계층과 고급계층으로 나누어지는데, 기본계층은 QoS를 보장하여, 화질은 떨어지나 에러 없이 영상을 전송하고, 고급계층에서는 기본계층에 해상도 에러에 대한 나머지 정보를 전송한다. 고급계층으로 전송되는 정보는QoS가 보장되지 않으므로 비트에러나, 팻킷 에러가 발생 할 수 있다. 따라서 고급계층에 에러가 발생하게 되고, 에러 전파 현상이 일어난다. 본 논문에서는 단일계층부호화와 2 Layer 계층부호화에서 발생되는 에러의 차이점을 알아보고, 데이터 손실 없는 기본계층과 에러가 발생하는 고급계층에 상관관계를 분석하여, SNR계층부호화에서 맞는 고급계층 에러은닉 기법을 제안한다.