Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effect of Ph3PO or BCP Between Electron Transport and Emission Layers on the Driving Voltage of Organic Light Emitting Diode

전자수송층과 발광층 사이의 Ph3PO 혹은 BCP가 유기발광다이오드의 구동전압에 미치는 영향

  • Ha, Mi-Young (Department of Materials Engineering, Soonchunhyang University) ;
  • Moon, Dae-Gyu (Department of Materials Engineering, Soonchunhyang University)
  • 하미영 (순천향대학교 디스플레이신소재공학과) ;
  • 문대규 (순천향대학교 디스플레이신소재공학과)
  • Received : 2010.04.05
  • Accepted : 2011.07.22
  • Published : 2011.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

We have investigated the effect of organic thin film on the driving voltage of OLED (organic light emitting diode) by inserting a 5 nm thick 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) or triphenylphosphineoxide ($Ph_3PO$) between tris-(8-hydroxyquinoline)aluminum ($Alq_3$) electron transport layer and 4,4'-bis(2,2'-diphyenylvinyl)-1,1'-biphenyl (DPVBi) emission layer. The device with 5 nm thick $Ph_3PO$ layer exhibited higher maximum current efficiency and lower driving voltage than the device with BCP layer, resulting from better electron injection from $Alq_3$ to DPVBi in the device with $Ph_3PO$ layer.

Keywords

References

  1. C. W. Tang and S. A. VanSlyke, Appl. Phys. Lett., 51, 913 (1987). https://doi.org/10.1063/1.98799
  2. S. Y. Kim, D. G. Moon, and J. I. Han, J. KIEEME, 21, 173 (2008).
  3. B. W. D'Andrade, S. R. Forrest, Adv. Mater., 16, 1585 (2004). https://doi.org/10.1002/adma.200400684
  4. M. A. Baldo, D. F. O'Brien, Y. You, A. Shoustikov, S. Sibley, M. E. Thompson, and S. R. Forrest, Nature, 395, 151 (1998). https://doi.org/10.1038/25954
  5. A. Ioannidis, E. Forsythe, Y. Gao, M. W. Wu, and E. M. Conwell, Appl. Phys. Lett., 72, 3038 (1998). https://doi.org/10.1063/1.121533
  6. E . I. H askal, A . C urion i, P . F . S eid ler, a n d W. Andreoni, Appl. Phys. Lett., 71, 1151 (1997). https://doi.org/10.1063/1.119850
  7. L. S. Hung, C. W. Tang, and M. G. Mason, Appl. Phys. Lett., 70, 152 (1997). https://doi.org/10.1063/1.118344
  8. S. Nata, H. Okada, H. Onnagawa, T. Tsutsui, Appl. Phys. Lett., 76, 197 (2000). https://doi.org/10.1063/1.125701
  9. Y. Hamada, T. Sano, K. Shibata, and K. Kuroki, Jpn. J. Appl. Phys., 34, 824 (1995). https://doi.org/10.1143/JJAP.34.L824
  10. J. Kido and T. Matsumoto, Appl. Phys. Lett., 73, 2866 (1998). https://doi.org/10.1063/1.122612
  11. J. Huang, M. Pfeiffer, A. Werner, J. Blochwitz, and K. Leo, Appl. Phys. Lett., 80, 139 (2002). https://doi.org/10.1063/1.1432110
  12. E . I. H asakal, A . C urion i, P . F . S eidler, an d W. Andreoni, Appl. Phys. Lett., 71, 1151 (1997). https://doi.org/10.1063/1.119850
  13. Z. L. Zhang, X. Y. Jiang, S. H. Xu, T. Nagatomo, and O. Omoto, J. Phys. D: Appl. Phys., 31, 32 (1998). https://doi.org/10.1088/0022-3727/31/1/005
  14. H. Aziz and Z. D. Popovic, Appl. Phys. Lett., 80, 2180 (2002). https://doi.org/10.1063/1.1455697