• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.4
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• pp.334-339
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• 1998

$Bi_2Sr_2CuO_x$(Bi-2201) thin films have been fabricated by atomic layer-by-layer deposition using ion beam sputtering (IBS) method. During the deposition, 14 wt%-ozone/oxygen mixture gas of typical pressure of $5.0\times10^{-5}$ Torr is supplied with ultraviolent light irradiation for oxidation. XRD and RHEED investigations reveal that a buffer layer with compositions different from Bi-2201 is formed at the early deposition stage of less than 10 units cell and then Bi-2201 oriented along the c-axis is grown.

• Transactions on Electrical and Electronic Materials
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• v.1 no.4
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• pp.7-10
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• 2000

Bi$_2$Sr$_2$CuI$\_$x/(Bi(2001)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition , 10 %-ozone/oxygen mixture gas of typical 25.0$\times$10$\^$-5/ Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less then 10 units cell and then c-axis oriented Bi(2201) is grown.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.97-100
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• 2000

Bi$_2$Sr$_2$CuO$\sub$x/(Bi(2201)) thin films are fabricated by atomic layer by layer deposition using ion beam sputtering(IBS) method. During the deposition, 10 %-ozone/oxygen mixture gas of typical 5.0 ${\times}$ 10$\^$-5/. Torr is applied with ultraviolet light irradiation for oxidation. XRD and RHEED investigations reveal out that a buffer layer with some different compositions is formed at the early deposition stage of less than 10 units cell and then c-axis oriented Bi(2201) is grown.

• Advances in aircraft and spacecraft science
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• v.3 no.3
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• pp.259-269
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• 2016

In this work results from an underwater experiment on flow-induced noise in the interior of a towed body generated from a surrounding turbulent boundary layer are presented. The measurements were performed with a towed body under open sea conditions at towing depths below 100 m and towing speeds ranging from 2.4 m/s to 6.2 m/s (4 kn to 12 kn). Focus is given in the experiments to the relation between (outer) wall pressure fluctuations and the (inner) hydroacoustic near-field on the reverse side of a flat plate. The plate configuration consists of a sandwich structure with an (thick) outer polyurethane layer supported by an inner thin layer from fibre-reinforced plastics. Parameters of the turbulent boundary layer are estimated in order to analyse scaling relations of wall-pressure fluctuations, interior hydroacoustic noise, and the reduction of pressure fluctuations through the plate.

• Applied Chemistry for Engineering
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• v.33 no.3
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• pp.315-321
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• 2022

We firstly observed that activated carbon (AC) deposited by atomic-layer vanadium pentoxide (V₂O₅) was used as CDI electrodes to utilize the high dielectric constant for enhancing the capacitance equipped with atomic layer deposition (ALD). It was demonstrated that the vanadium pentoxide (V₂O₅) with sub-nanometer layer was effectively deposited onto activated carbon, and the electric double-layer capacitance of the AC was improved due to an increase in the surface charge density originated from polarization, leading to high ion removal in CDI operation. It was confirmed that the performance of modified-AC increases more than 200%, comparable to that of pristine-AC under 1.5 V at 20 mL min^-1 in CDI measurements.

• New & Renewable Energy
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• v.17 no.4
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• pp.36-45
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• 2021

To remove the Cu secondary phase remaining on the surface of a CIGSSe absorber layer manufactured by the two-step process, KCN etching was applied before depositing the CdS buffer layer. In addition, it was possible to increase the conversion efficiency by air annealing after forming the CdS buffer layer. In this study, various pre-treatment/post-treatment conditions wereapplied to the S-containing CIGSSe absorber layerbefore and after formation of the CdS buffer layer to experimentally confirm whether similareffects as those of Se-terminated CIGSe were exhibited. Contrary to expectations, it was noted that CdS air annealing had negative effects.

• Korean Journal of Remote Sensing
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• v.17 no.1
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• pp.1-14
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• 2001

The enhancement of the refractive index structure parameter $C_n^2$ often occurs where vertical gradients of virtual potential temperature ${\theta}_v$ and mixing ratio q have their maximum values. The $C_n^2$ can be a very useful parameter for estimating the convective boundary layer(CBL) height. The behavior of $C_n^2$ peaks, often used to locate the height of mixed layer, was investigated in the present study. In addition, a new method to determine the CBL height objectively using both $C_n^2$ and vertical air velocity variance ${\sigma}_w$ data of UHF radar was also suggested. The present analysis showed that the $C_n^2$ peaks in the backscatter intensity profiles often occurred not only at the top of the CBL but also at the top of a residual layer or at a cloud layer. The $C_n^2$ peaks corresponding to the CBL heights were slightly lower than the CBL heights derived from rawinsonde sounding data when vertical mixing owing to weak solar heating was not significant and the height of strong vertical ${\theta}_v$ gradients were not consistent with that of strong vertical q gradients. However, the $C_n^2$ peaks corresponding to the CBL heights were in good agreement with the rawinsonde-estimated CBL hegiths when vertical mixing owing to solar heating was significant and the vertical gradient of both ${\theta}_v$ and q in the entrainment zone was very strong. The maximum backscatter intensity method, which determines the height of $C_n^2$ peak as the CBL height, correctly estimated the CBL height when the $C_n^2$ profile had single peak, but this method erroneously estimated the CBL height when there was a residual layer or a cloud layer over the top of the CBL. The new method distinguished when there the CBL height from the peak due a cloud layer or a residual layer using both $C_n^2$ and ${\sigma}_w$ data, and correctly estimated the CBL height. As for estimation of diurnal variation of the CBL height, the new method backscatter intensity method even if the vertical profile of backscatter intensity had two peaks from the CBL height and a residual layer or a cloud layer.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.432-438
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• 2011

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.

• The Sea:JOURNAL OF THE KOREAN SOCIETY OF OCEANOGRAPHY
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• v.4 no.1
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• pp.10-17
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• 1999

The purpose of this study is to investigate the baroclinic response of the upper-layer of two-layered fluid when the lower-layer motion is driven by pumping an external fluid into the lower-layer or by pumping out the lower-layer fluid. Recent observations of the barotropic nature of deep water movements in the East Sea (fakematsu et al., 1994; KORDI, 1997) may suggest a possibility of interaction between the upper and lower layer via interface tilting. For homogeneous fluid, steady and axisymmetric source or sink causes axisymmetric geostrophic flow, and the lower-layer motion in two-layered fluid was similar to homogeneous flow. But as Rossby number (${\varepsilon}$) or internal Froude number ($f_2$) increases, the lower-layer motion was affected by the interface tilting. The interface tilting calculated based on the observed azimuthal velocities of upper- and lower-layers becomes greater as $f_2$ increases. In other words, the increase of the $f_2$ changes the barotropic system to baroclinic system.

• Journal of Surface Science and Engineering
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• v.41 no.1
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• pp.1-5
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• 2008

In this work, improvement of mechanical and electrical properties of gate dielectric layer for flexible organic thin film transistor (OTFT) devices was investigated. In order to increase the mechanical flexibility of PVP (poly(4-vinyl phenol) organic gate dielectric, a very thin inorganic $HfO_2$ layers with the thickness of $5{\sim}20nm$ was inserted in between the spin-coated PVP layers. Insertion of the inorganic $HfO_2$ in the laminated organic/inorganic structure of PVP/$HfO_2$/PVP layer led to a dramatic reduction in the leakage current compared to the pure PVP layer. Under repetitive cyclic bending, the leakage current density of the laminated PVP/$HfO_2$/PVP layer with the thickness of 20-nm $HfO_2$ layer was not changed, while that of the single PVP layer was increased significantly. Mechanical flexibility tests of the OTFT devices by cyclic bending with 5 mm bending radius indicated that the leakage current of the laminated PVP/$HfO_2$(20 nm)/PVP gate dielectric in the device structure was also much smaller than that of the single PVP layer.