• Proceedings of the Korean Nuclear Society Conference
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• 1997.05b
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• pp.165-170
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• 1997

Samples of extruded dispersions of 24 vol.% spherical U-2wt%Mo and U-10wt.%Mo powders in an aluminum matrix were annealed for over 2,000 hours at 40$0^{\circ}C$. No significant dimensional changes occurred in the U-1025.%Mo/aluminum dispersions. The U-2wt.%Mo/aluminum dispersion, however, increased in volume by 26% after 2,000 hours at 40$0^{\circ}C$. This large volume change is mainly due to the formation of voids and cracks resulting from nearly complete interdiffusion of U-Mo and aluminum. Interdiffusion between U-10wt.%Mo and aluminum was found to be minimal. The different diffusion behavior is primarily due to the fact that U-2wt.%Mo decomposes from an as-atomized metastable r-phase(bcc) solid solution into the equilibrium r-U and U$_2$Mo two-phase structure during the experiment, whereas U-10wt.%Mo retains the metastable r-phase structure after the 2,000 hours anneal and thereby displays superior thermal compatibility with aluminum compared to U-2wt.%Mo. In addition, the molybdenium supersaturated in U-10wt.%Mo particles inhibits the diffusion of aluminum atoms along the grain boundary into the particle. Also, the dissolution of only a few Mo atoms in UAL$_3$ retards the formation of the intermediate phase, as Mo atoms need to migrate from new intermetallic compounds to unreacted islands.

• Journal of Surface Science and Engineering
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• v.39 no.3
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• pp.110-114
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• 2006

In this work, comparative studies on microstructure and mechanical properties between $Mo_2N$ and Mo-Si-N coatings were conducted. Ternary Mo-Si-N coatings were deposited on AISI D2 steel substrates by a hybrid method, where AIP technique was combined with a magnetron sputtering technique. Instrumental analyses of XRD, HRTEM, and XPS revealed that the Mo-Si-N coatings must be a composite consisting of fine $Mo_2N$ crystallites and amorphous $Si_3N_4$. The hardness value of Mo-Si-N coatings significantly increased from 22 GPa of $Mo_2N$ coatings to about 37 GPa with Si content of 10 at.% due to the refinement of $Mo_2N$ crystallites and the composite microstructure characteristics. The average friction coefficient of the Mo-Si-N coatings gradually decreased from 0.65 to 0.4 with increasing Si content up to 15 at.%. The effects of Si content on microstructure and mechanical properties of Mo-N coatings were systematically investigated.

• Journal of the Korean Magnetics Society
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• v.17 no.2
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• pp.95-98
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• 2007

In this paper, the magnetic properties and the annealing behavior of spin valve structures with Mo(MoN) underlayers were studied for various underlayer thickness. The spin valve structure was Si substrate/Mo(MoN)$(t{\AA})/NiFe(21{\AA})/CoFe(28{\AA})/Cu(22{\AA})/CoFe(18{\AA})/IrMn(65{\AA})/Ta(25 {\AA})$. Mo and MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The deposition rate of the MoN thin film was decreased and tile resistivity of the MoN thin films were increased as the $N_2$ gas flow was increased. The variations of MR ratio and magnetic exchange coupling field of spin valve structure were smaller with MoN underlayers than that with Mo underlayers up to thickness of $51{\AA}$. MR ratio of spin valves with Mo underlayers was 2.86% at room temperature and increased up to 2.91 % after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 2.16%. The MR ratio of spin valves structure with MoN underlayers for $N_2$ gas flow 1 sccm was 5.27% at room temperature and increased up to 5.56% after annealing at $200^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased about 4.9%.

• Resources Recycling
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• v.20 no.4
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• pp.71-77
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• 2011

$MoO_3$ powders were reduced to $MoO_2$ under Ar+$H_2$ gas mixture in a tubular furnace at temperature range 723~873 K. Reaction rate was quantitatively deduced by measuring relative humidity of off gas. Observed reaction rate increased significantly with hydrogen partial pressure and reaction temperature and the rate of $H_2O$ evolution increased drastically during the initial period of reduction. As reduction proceeded, however, $H_2O$ partial pressure decreased noticeably. During the initial period of the reduction, a linear relationship for time dependence of the reduction fraction was observed. The activation energy for the reduction of $MoO_3$ to $MoO_2$was 73.56 kJ/mol during the initial period of reduction.

• Journal of the Korean Magnetics Society
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• v.16 no.5
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• pp.240-244
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• 2006

In this paper, magnetic properties and annealing behavior of spin valve structures using Mo(MoN) layers as underlayers were studied varying the thickness of the underlayers. The spin valve structure was consisted of Si substrate/$SiO_2(2,000{\AA})/Mo(MoN)(t{\AA})/NiFe(21\;{\AA})/CoFe(28\;{\AA})/Cu(22\;{\AA})/CoFe(18\;{\AA})/IrMn(65\;{\AA})/Ta(25\;{\AA})$. Also, MoN films were deposited on Si substrates and their thermal annealing behavior was analyzed. The resistivity of the MoN film increased as the $N_2$ gas flow rate was increased. After annealing at $600^{\circ}C$, XRD results did not show peaks of silicides. XPS results indicated MoN film deposited with 5 sccm of $N_2$ gas flow rate was more stable than the film deposited with 1 sccm of $N_2$ gas flow rate. The variations of MR ratio and magnetic exchange coupling fold were small for the spin valve structures using Mo(MoN) underlayers up to thickness of45 ${\AA}$. MR ratio of spin valves using MoN underlayers deposited with various $N_2$ gas flow rate was about 7.0% at RT and increased to about 7.5% after annealing at $220^{\circ}C$. Upon annealing at $300^{\circ}C$, the MR ratio decreased to about 3.5%. Variation of $N_2$ gas flow rate up to 5 sccm did not change the MR ratio and $H_{ex}$ appreciably.

• Particle and aerosol research
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• v.9 no.1
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• pp.31-36
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• 2013

In this study, Mo metal powder was prepared by hydrogen reduction of Mo trioxides with different purity of 2N and 3N grades. We have obtained Mo metal powder with oxygen content of 1450 ppm by hydrogen reduction and subsequent heat treatment for degassing. Using the Mo metal powder, a low-oxygen Mo ingot was prepared by repetitive vacuum arc melting. The oxygen content of the obtained Mo ingot was less than 70 ppm after vacuum arc melting for 30 min. The purity of the Mo metal powder and the ingot was evaluated using glow discharge mass spectrometry. The purity of the respective Mo ingots was increased to 3N and 4N grades from the Mo powder of 2N and 3N grades after the repetitive vacuum arc melting. The low oxygen Mo ingot thus can be used as a raw material for sputtering targets.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.343-343
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• 2014

We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.

• Journal of radiological science and technology
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• v.30 no.2
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• pp.113-119
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• 2007

It is important to consider the contrast of object in Mammography because an absorption gap between tissues of body and breast in breast is low. This study is to evaluate MTF image with resolution chart according to change of combination of target and filter. The results were as follows : 1. There were significant differences in X-ray energy according to combination of filter(Mo/Mo, Mo/Rh. Mo/Al, Rh/Rh, Rh/Al) and acrylic thickness(2 cm, 3 cm, 4 cm). 2. The value of lp/mm on MTF to 0.5 showed that the sharpness in MTF curve was 2.4 compared to Mo/Mo and 2cm acryl, 2.63 in Mo/Rh and 4 cm acryl, and 2.9 in Rh/Rh and 6cm acryl. 3. The value of lp/mm on MTF showed that the resolution in MTF curve was 6.0 compared to Mo/Mo and 2 cm acryl, 4.60 in Rh/Al and 4cm acryl, and 6.03 in Rh/Al and 6 cm acryl. 4. The value of MTF on 2.5 lp/mm distinguishable visually was 0.48 compared to Mo/Mo and 2 cm acryl, 0.53 in Mo/Rh and 4cm acryl, and 0.59 in Rh/Rh and 6cm acryl. 5. For the evaluation of an image of the mammo-phantom, the score of Mo/Mo was 12 points, Mo/Rh 11, Rh/Rh 10.5, Mo/Al 10, Rh/Al 9.0, respectively.

• Journal of Hydrogen and New Energy
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• v.20 no.1
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• pp.73-78
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• 2009

투과 전자 현미경(TEM)을 사용하여 소성 후 Pt와 $MoO_3$ 표면 위에 $MoO_x$ 박막층이 형성되는 것을 조사하였다. 연속된 CO 화학 흡착법에 의하여 표면된 노출된 Pt 표면적의 변화를 관찰하였으며, XPS 분석으로 부터 Pt 표면에 형성된 $MoO_x$ 박막층 두께는 소성 온도 증가에 따라 증가하는 것으로 측정되었다. 소성 과정은 Pt와 $MoO_3$ 간에 개선된 접촉을 유도하였으며, Pt/$MoO_3$ 촉매에서 수소전이현상을 조절하는 것으로 나타난다.

• Journal of the Korean Vacuum Society
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• v.21 no.3
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• pp.142-150
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• 2012

In this Study, Mo back electrode were deposited as the functions of various working pressure, deposition time and plasma per-treatment on sodalime glass (SLG) for application to CIGS thin film solar cell using by DC sputtering method, and were analyzed Mo change to $MoSe_2$ layer through selenization processes. And finally Mo back electrode characteristics were evaluated as application to CIGS device after Al/AZO/ZnO/CdS/CIGS/Mo/SLG fabrication. Mo films fabricated as a function of the working pressure from 1.3 to 4.9mTorr are that physical thickness changed to increase from 1.24 to 1.27 ${\mu}m$ and electrical characteristics of sheet resistance changed to increase from 0.195 to 0.242 ${\Omega}/sq$ as according to the higher working pressure. We could find out that Mo film have more dense in lower working pressure because positive Ar ions have higher energy in lower pressure when ions impact to Mo target, and have dominated (100) columnar structure without working pressure. Also Mo films fabricated as a function of the deposition time are that physical thickness changed to increase from 0.15 to 1.24 ${\mu}m$ and electrical characteristics of sheet resistance changed to decrease from 2.75 to 0.195 ${\Omega}/sq$ as according to the increasing of deposition time. This is reasonable because more thick metal film have better electrical characteristics. We investigated Mo change to $MoSe_2$ layer through selenization processes after Se/Mo/SLG fabrication as a function of the selenization time from 5 to 40 minutes. $MoSe_2$ thickness were changed to increase as according to the increasing of selenization time. We could find out that we have to control $MoSe_2$ thickness to get ohmic contact characteristics as controlling of proper selenization time. And we fabricated and evaluated CIGS thin film solar cell device as Al/AZO/ZnO/CdS/CIGS/Mo/SLG structures depend on Mo thickness 1.2 ${\mu}m$ and 0.6 ${\mu}m$. The efficiency of CIGS device with 0.6 ${\mu}m$ Mo thickness is batter as 9.46% because Na ion of SLG can move to CIGS layer more faster through thin Mo layer. The adhesion characteristics of Mo back electrode on SLG were improved better as plasma pre-treatment on SLG substrate before Mo deposition. And we could expect better efficiency of CIGS thin film solar cell as controlling of Mo thickness and $MoSe_2$ thickness depend on Na effect and selenization time.