• 전자공학회논문지 IE
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• v.44 no.1
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• pp.6-9
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• 2007

Twenty four types of thermopile for micro spectrometer infrared sensors were fabricated on low-stress Si3N4 membranes with $l.2{\mu}m-thickness$ using MEMS technology. Thermopile were designed and fabricated for optimum conditions by five parameters of thermocouple numbers $(16\sim48)$, thermocouple line widths $(10{\mu}m-25{\mu}m)$, thermocouple lengths $(100{\mu}m-500{\mu}m)$, membrane areas $(12mm2\sim2.52mm2)$ and junction areas $(150{\mu}m2\sim750{\mu}m2)$, respectively. It was thought that measurement results could be used for thermopile infrared sensors optimum structure for micro spectrometers.

• The Journal of the Korean dental association
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• v.48 no.4
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• pp.297-307
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• 2010

Noncarious cervical lesions(NCCLs) are characterized as structural defects found on the tooth surface of the cement-enamel junction. Loss of tooth structure through noncarious mechanisms may vary in etiology and clinical presentation for each individual but presently many clinician now classify this as tooth failure of abfraction due to the stress applied in the cervical area of the tooth under oral physiological and pathological loads. In the current study, we investigated the stress distribution of maxillary premolar with NCCL using simulated 3D finite element analysis. The results were as follows: 1. In the sound maxillary premolar, the stresses were highly concentrated at cervical enamel surface of the mesiobuccal line angle, asymmetrically. 2. Once the lesion has been formed, the highest stress concentration was observed around the apex of the wedge shaped lesion. 3. In four types of NCCL, the patterns of stress distribution were similar and the peak stress was observed at mesial corner and also stresses concentrated at lesion apex. 4. Lesion cavity modification of rounding apex, reduced stress of lesion apex. 5. When restoring the notch-shaped lesion, material with high elastic modulus worked well at the lesion apex and material with low elastic modulus worked well at the cervical cavosurface margin.

• The Transactions of the Korean Institute of Power Electronics
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• v.20 no.6
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• pp.558-565
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• 2015

Gallium nitride high-electron mobility transistor (GaN HEMT) is the strongest candidate for replacing Si MOSFET. Comparing the figure of merit (FOM) of GaN with the state-of-the-art super junction Si MOSFET, the FOM is much better because of the wide band gap characteristics and the heterojunction structure. Although GaN HEMT has many benefits for the power conversion system, the performance of the power conversion system with the GaN HEMT is sensitive because of its low threshold voltage ($V_{th}$) and even lower parasitic capacitance. This study examines the characteristics of a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT. The problem of unoptimized dead time is analyzed on the basis of the output capacitance of GaN HEMT. In addition, the printed circuit board (PCB) layout consideration is analyzed to reduce the negative effects of parasitic inductance. A comparison of the experimental results is provided to validate the dead time and PCB layout analysis for a phase-shifted full-bridge dc-dc converter with cascode GaN HEMT.

• Journal of Advanced Marine Engineering and Technology
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• v.31 no.4
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• pp.385-393
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• 2007

The strength evaluation of the most weakest junction part is required for the safety design of all structures. Most of all. in order to enhance the reliability and safety of the welding part. whose use is the highest, it is very important to establish the efficient structure manufacturing technology by studying and investigating the evaluation of fatigue strength in various environments. This study analyzed the relations of da/dN, and th according to the welding methods of SMAW, FCAW, and SAW. In the stage II. the value of stress intensity factor range was the highest in SMAW welding method of stress ration R=0.1, and appeared under the sequence of FCAW and SAW and as the completion section of stress intensity factor was low, threshold stress intensity factor was lowly formed in da/dN - The fatigue life of each welding method is sensitively worked in high stress ratio. judging from the fact that the width of life reduction increases in the high stress ratio zone compared to the width of life reduction in the low stress ratio zone. In the fatigue limit of welding methods before corrosion. the welding of SMAW and FCAW shows the same fatigue limit compared to Base metal, and SAW holds the lowest fatigue limit value.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.9 no.6
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• pp.1581-1584
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• 2008

In dual-polycide-gate structure with butting contact, net doping concentration of polysilicon was decreased due to overlap between $n^+$ and $p^+$ and lateral dopant diffusion in silicide/polysilicon layers. The generation of parasitic Schottky diode in butting contact region is attributed both to the $CoSi_2$-loss due to $CoSi_2$ agglomeration and to the decrease in net doping concentration of polysilicon layer. Parasitic Schottky diode reduces noise margin of sense amplifier in DDI DRAM, which causes column fail. The column fail could be reduced by physical isolation of $n^+/p^+$ polysilicon junction or suppressing $CoSi_2$ agglomeration by using nitrogen implantation into $p^+$ polysilicon before $CoSi_2$ formation.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.2
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• pp.1398-1402
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• 2015

In surface mount technology, the use of technology implemented using a Chip Mounter relay that is inserted into the junction box, etc. car is increasing. On the other hand, there is a need for technology to reduce the weight of the heavy component of the relay attached to different Stick Tube generally chips. Therefore, rather than existing technology, this study improved the algorithm of the system to provide a mechanical structure using Air to supply greater stability using this the component feeder utilizing the Stick Tube proposed technology. When the equipment installed in the Air Stick Feeder was used, the effectiveness, such as increased production and reduced disposal expense, was improved.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.7
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• pp.2565-2569
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• 2010

It was researched the correlation between the Solar cell and the effect of texturing. The samples were textured by using the IPA mixed solution with $HNO_3$, KOH and NaOH. The samples were analyzed by the X-ray Diffraction pattern and Fourier Transform Infrared spectroscopy. The FTIR spectra in the range of 950~1350 $cm^{-1}$ was related to the peak's formation as the bonding structure. The split of peaks means that the inter reaction between the molecular did not activate and then increased the efficiency because of low reflectance as shown the cell treated in NaOH mixed solution.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.166-169
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• 2006

We fabricated hexagonal copper sulfide $Cu_2S$ nanowires to obtain a larger contact area of $Cu_2S/CdS$ solar cell. Copper sulfide nanowires were grown on Cu foil at room temperature by gas-sol id reaction. The size, density and shape of nanowires seemed to be affected by the change or reaction time temperature, crystallographic orientation of Cu foil, and molar ratio of the mixed gas. We controled the length and the diameter of the nanowires and we obtained suitable nanowire arrays which has fitting size for uniform deposition with n-type CdS. CdS layer was deposited on the nanowire array by electrodeposition and it seemed to be uniform. The $Cu_2S/CdS$ nanowires/CdS junction showed diode characteristics, A large contact area is expected with the $Cu_2S/CdS$ nanowire structure as compared with the $Cu_2S/CdS$ thin film.

• Journal of the Semiconductor & Display Technology
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• v.8 no.3
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• pp.1-5
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• 2009

In this study, we have shown the power conversion efficiency of organic thin film photovoltaic devices utilizing a conjugated polymer/fullerene bulk-hetero junction structure. We use MDMO-PPV(Poly[2-methoxy-5-(3,7-dimethyloctyloxy -1,4-phenylenevinylene) as an electron donor, PCBM([6,6]-Phenyl C61 butyric acid methyl ester) as an electron accepter, and PEDOT:PSS used as a HTL(Hole Transport Layer). We have fabricated OPV(Organic Photovoltaic) devices as a function of the MDMO-PPV/PCBM concentration from 1:1 to 1:5. The electrical characteristics of the fabricated devices were investigated by means of I-V, P-V, F·F(Fill Factor) and PCE(power conversion efficiency). The power conversion efficiency was gradually increased until 1:4 ratio, also the highest efficiency of 0.4996% was obtained at the ratio.

• Structural Engineering and Mechanics
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• v.70 no.4
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• pp.467-477
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• 2019

The objective of this work is to analyze by traction tests, the mechanical behavior of an assembly of type metal / metal by various assembly processes; bonding, riveting and hybrid, on the one hand to show the advantage of a hybrid assembly with respect to the other processes, and on the other hand, to analyze by the finite element method the distribution of the stresses in the various components of the structure and to demonstrate the effectiveness of the use of a hybrid assembly with respect to other processes. The number of rivets has been considered. The results show clearly that the value of the different stresses is reduced in the case of a hybrid junction and that the number of rivets in an assembly can be reduced by using a hybrid joint.