• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.3
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• pp.96-106
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• 1996

One of the major problems for poly-Si TFTs is the large off state leakage current. LDD (lightly doped drain) and offset gated structures have been employed in order to reduce the leakage current. However, these structures also redcue the oN current significantly due to the extra series resistance caussed by the LDD or offset region. It is desirable to have a device which would have the properties of the offset gated structure in the OFF state, while behaving like a fully gated device in the oN state. Therefore, we propose a new thin film transistor with pnp junction gate which reduce the leakage curretn during the OFF state without sacrificing the ON current during the ON state.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• Proceedings of the Korean Magnestics Society Conference
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• 2017.05a
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• pp.53-54
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• 2017

Direct observation of the DW dynamics in a bifurcated wire reveals that the propagation is via the splitting of DW at the junction, resulting in individual DW in each branch. The DMI induced DW tilting leads to quasi-selective propagation through the network structure, with favored branch determined by the tilting angle of the DW surface. This results in the DW in the individual branches having different depinning fields. Our work shows that by tuning the DMI constant in a material, selective DW motion through a network can be achieved.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2002.11b
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• pp.529-534
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• 2002

The receptance method was applied for the analysis of a cylindrical shell with a curvaturated plate attached at the top of the shell. The boundary conditions of the shell considered here were clamped at the bottom and free at the top of the shell. Before the analysis of the shell/plate combined structure, the natural frequencies of the plate and the shell were calculated separately and then they were used in the calculation of the frequencies of the combined structure by the receptance method. The frequency equation of the combined structure was derived from the continuity condition at the junction of the shell and the plate. The frequencies for various curvature factors of the plate were presented and compared with those from ANSYS to show its validity of the present method.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1459-1461
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• 1996

The optical and electrical properties of High Power AlGaAs/AlGaAs Infrared LED with DDH( Double power Double Hetero Junction) structure are investigated. The high power LED is recently studied in order to apply to high speed communication devices. The power out of AlGaAs/AlGaAs with DDH structure is 13.0[mW], the forward voltage is 1.45[V], and the average decrease rate of power out is about 5[%] after aging test. The optical and electrical properties of DDH structure LED are superior than that of SH structured LED. The DDH structured LED is suitable to the high speed communication devices.

• Current Photovoltaic Research
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• v.4 no.3
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• pp.108-113
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• 2016

III-V compound semiconductor based thin film solar cells promise relatively higher power conversion efficiencies and better device reliability. In general, the thin film III-V solar cells are fabricated by an epitaxial lift-off process, which requires an $Al_xGa_{1-x}As$ ($x{\geq}0.8$) sacrificial layer and an inverted solar cell structure. However, the device performance of the inversely grown solar cell could be degraded due to the different internal diffusion conditions. In this study, InGaP/GaAs double-junction solar cells are inversely grown by MOCVD on GaAs (100) substrates. The thickness of the GaAs base layer is reduced to minimize the thermal budget during the growth. A wide band gap p-AlGaAs/n-InGaP tunnel junction structure is employed to connect the two subcells with minimal electrical loss. The solar cell structures are transferred on to thin metal films formed by Au electroplating. An AlAs layer with a thickness of 20 nm is used as a sacrificial layer, which is removed by a HF:Acetone (1:1) solution during the epitaxial lift-off process. As a result, the flexible InGaP/GaAs solar cell was fabricated successfully with an efficiency of 27.79% under AM1.5G illumination. The efficiency was kept at almost the same value after bending tests of 1,000 cycles with a radius of curvature of 10 mm.

• The Journal of Korean Society for Radiation Therapy
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• v.11 no.1
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• pp.53-59
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• 1999

The aim of this study is to improve the accuracy of field placement and junction between adjacent fields and block shielding through the use of a computed tomography(CT) simulator and virtual simulation. The information was acquired by assessment of Alderson Rando phantom image using CT simulator (I.Q. Xtra - Picker), determination of each field by virtual fluoroscopy of voxel IQ workstation AcQsim and colored critical structures that were obtained by contouring in virtual simulation. And also using a coronal, sagittal and axial view can determine the field and adjacent field gap correctly without calculation during the procedure. With the treatment planning by using the Helax TMS 4.0, the dose in the junction among the adjacent fields and the spinal cord and cribriform plate of the critical structure was evaluated by the dose volume histogram. The pilot image of coronal and sagittal view took about 2minutes and 26minutes to get 100 images. Image translation to the virtual simulation workstation took about 6minutes. Contouring a critical structure such as cribriform plate, spinal cord using a virtual fluoroscopy were eligible to determine a correct field and shielding. The process took about 20 minutes. As the result of the Helax planning, the dose distribution in adjacent field junction was ideal, and the dose level shows almost 100 percentage in the dose volume histogram of the spinal cord and cribriform plate CT simulation can get a correct therapy area due to enhancement of critical structures such as spinal cord and cribriform plate. In addition, using a Spiral CT scanner can be saved a lot of time to plan a simulation therefore this function can reduce difficulties to keep the patient position without any movements to the patient, physician and radiotherapy technician.

• Applied Chemistry for Engineering
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• v.9 no.5
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• pp.710-714
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• 1998

Organic electroluminescence devices (ELD) with hetero-junction structure were fabricated utilizing poly(p-phenylne vinylene) (PPV) as emitting layer and electron transport layer (ETL). 2-(4-biphenyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) was used as an electron transport agent. Copolymers with stilbene type comonomers, such as poly(styrene-co-PVTS), poly(styrene-co-MeO-PVTS) and poly(styrene-co-MeO-ST) were synthesized to be used as a matrix polymer to disperse electron transport agent (PBD). Among the hetero-junction EL devices fabricated with the above materials, the device with poly(styrene-co-PVTS) as matrix polymer for ETL gave the highest luminance ($120.7cd/m^2$, 13 V). EL devices made with poly(styrene-co-MeO-PVTS) or poly(styrene-co-MeO-ST) matrix exhibited lower luminance than the one with polystyrene matrix and the single layer EL (ITO/PPV/Mg) device.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.169-172
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• 2004

Deep sub-micron device required to get the superior ultra thin gate oxide characteristics. In this research, I will recommend a novel shallow trench isolation structure(STI) for thin gate oxide and a $N_2$O gate oxide 30 $\AA$ by NO ambient process. The local oxidation of silicon(LOCOS) isolation has been replaced by the shallow trench isolation which has less encroachment into the active device area. Also for $N_2$O gate oxide 30 $\AA$, ultra thin gate oxide 30 $\AA$ was formed by using the $N_2$O gate oxide formation method on STI structure and LOCOS structure. For the metal electrode and junction, TiSi$_2$ process was performed by RTP annealing at 850 $^{\circ}C$ for 29 sec. In the viewpoints of the physical characteristics of MOS capacitor, STI structure was confirmed by SEM. STI structure was expected to minimize the oxide loss at the channel edge. Also, STI structure is considered to decrease the threshold voltage, result in a lower Ti/TiN resistance( Ω /cont.) and higher capacitance-gate voltage(C- V) that made the STI structure more effective. In terms of the TDDB(sec) characteristics, the STI structure showed the stable value of 25 % ～ 90 % more than 55 sec. In brief, analysis of the ultra thin gate oxide 30 $\AA$ proved that STI isolation structure and salicidation process presented in this study. I could achieve improved electrical characteristics and reliability for deep submicron devices with 30 $\AA$ $N_2$O gate oxide.

• Journal of the Korean Society for Nondestructive Testing
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• v.22 no.4
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• pp.347-353
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• 2002

A structure of a glass electrode-type pH sensor for measuring any concentration of $H^+$ in an aqueous solution was embodied with bulk micromachining technology. Two open well structures were formed, and a reference electrode was secured by the Ag/AgCl thin film in the sloped side of the etched structure. A sensitive membrane of an indicator electrode for generating a potential by an exchange reaction to $H^+$ was made with a glass containing Na 20% or more finely so that its thickness might be $100{\mu}m$ or so, and then it was bonded to one pyramidal structure. A liquid junction for a current path was formed by filling an agar in the anisotropically etched part of the Si wafer, which had a size of $50{\mu}m{\times}50{\mu}m$, and then bonded it to the other. After complete fabrication of each part, it was filled with a 2M KCl reference solution and encapsulated the sensor structure with a cold expoxy. The potential value of fabricated pH sensor was about 90mV/pH in the standard pH solutions.