• Journal of the Korean Magnetics Society
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• v.8 no.1
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• pp.6-12
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• 1998

Fe-N(iron-nitrogen) crystal phases were prepared by nitrogen ion implantation into $\alpha$-Fe foil with Plasma Source Ion Implantation (PSII). Ion implantation time of sample is treated 15 minutes(FeN15) and 30 minutes (FeN30). The nitrogen depth profiles measured by Auger electron spectroscopy (AES) were determined to be about 12000 $\AA$ and 4000 $\AA$ for the samples of FeN15 and FeN30, respectively. The results of vibrating sample magnetometer (VSM) show that the saturation magnetization of the samples of as-implanted FeN15 and FeN30 was higher than that of pure $\alpha$-Fe foil, which may be owing to $\alpha$'-$Fe_8N$ or $\alpha$"-$Fe_{16}N_2$ phases. Accordingly this study shows the possibility of the partial formation of $\alpha$' or $\alpha$" phase in iron nitrogen produced by PSII method.II method.

• Journal of Korean Neurosurgical Society
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• v.64 no.6
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• pp.853-863
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• 2021

Objective : Biodegradable poly-L-lactic acid (PLLA) with a highly biocompatible surface via tantalum (Ta) ion implantation can be an innovative solution for the problems associated with current biodegradable stents. The purpose of this study is to develop a Taimplanted PLLA stent for clinical use and to investigate its biological performance capabilities. Methods : A series of in vitro and in vivo tests were used to assess the biological performance of bare and Ta-implanted PLLA stents. The re-endothelialization ability and thrombogenicity were examined through in vitro endothelial cell and platelet adhesion tests. An in vivo swine model was used to evaluate the effects of Ta ion implantation on subacute restenosis and thrombosis. Angiographic and histologic evaluations were conducted at one, two and three months post-treatment. Results : The Ta-implanted PLLA stent was successfully fabricated, exhibiting a smooth surface morphology and modified layer integration. After Ta ion implantation, the surface properties were more favorable for rapid endothelialization and for less platelet attachment compared to the bare PLLA stent. In an in vivo animal test, follow-up angiography showed no evidence of in-stent stenosis in either group. In a microscopic histologic examination, luminal thrombus formation was significantly suppressed in the Ta-implanted PLLA stent group according to the 2-month follow-up assessment (21.2% vs. 63.9%, p=0.005). Cells positive for CD 68, a marker for the monocyte lineage, were less frequently identified around the Ta-implanted PLLA stent in the 1-month follow-up assessments. Conclusion : The use of a Ta-implanted PLLA stent appears to promote re-endothelialization and anti-thrombogenicity.

• Journal of IKEEE
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• v.26 no.3
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• pp.333-340
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• 2022

Process and device simulations were performed to determine the optimal ion implantation conditions to prevent double snapback of high voltage operating DDDNMOS (double diffused drain N-type MOSFET) device for ESD protection. By examining the effects of HP-Well, N^- drift and N⁺ drain ion implantation on the double snapback and avalanche breakdown voltages, it was possible to prevent double snapback and improve the electrostatic protection performance. If the ion implantation concentration of the N^- drift region rather than the HP-Well region is optimally designed, it prevents the transition from the primary on-state to the secondary on-state, so that relatively good ESD protection performance can be obtained. Since the concentration of the N^- drift region affects the leakage current and the avalanche breakdown voltage, in the case of a process technology with an operating voltage greater than 30V, a new structure such as DPS or colligation of optimal process conditions can be applied. In this case, improved ESD protection performance can be realized.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.34 no.2
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• pp.125-133
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• 2024

Objectives: The aim of this study is to develop a comprehensive Occupational Safety and Health (OSH) guide for maintenance tasks in semiconductor processing, specifically focusing on etching, deposition, and ion implantation processes. Methods: The development of the OSH guide involved a literature review, consultations with industry experts, and field investigations. It concentrates on Maintenance Work (MW) operations in these specialized areas. Results: The result is a detailed OSH guide tailored to MW in etching, deposition, and ion implantation facilities within semiconductor processing. This guide is structured to assist maintenance workers through pre-, during and post-MW phases, ensuring easy comprehension and adherence to safety protocols. It highlights the necessity of safety and health measures throughout the MW process to protect personnel. The guide is enriched with real-life scenarios and visual aids, including cartoons and photographs, to aid in the understanding and implementation of safety and health principles. Conclusions: This OSH guide is designed to enhance the protection of workers engaged in maintenance activities in the electronics sector, particularly in semiconductor manufacturing. It aims to improve compliance with safety and health standards in these high-risk environments.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.251-263
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• 2008

In this paper, we report an analytical modeling and 2-D Synopsys Sentaurus TCAD simulation of ion implanted silicon carbide MESFETs. The model has been developed to obtain the threshold voltage, drain-source current, intrinsic parameters such as, gate capacitance, drain-source resistance and transconductance considering different fabrication parameters such as ion dose, ion energy, ion range and annealing effect parameters. The model is useful in determining the ion implantation fabrication parameters from the optimization of the active implanted channel thickness for different ion doses resulting in the desired pinch off voltage needed for high drain current and high breakdown voltage. The drain current of approximately 10 A obtained from the analytical model agrees well with that of the Synopsys Sentaurus TCAD simulation and the breakdown voltage approximately 85 V obtained from the TCAD simulation agrees well with published experimental results. The gate-to-source capacitance and gate-to-drain capacitance, drain-source resistance and trans-conductance were studied to understand the device frequency response. Cut off and maximum frequencies of approximately 10 GHz and 29 GHz respectively were obtained from Sentaurus TCAD and verified by the Smith's chart.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.4 no.1
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• pp.13-16
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• 2003

We implanted $N^+ion$ into TiO$_2$/Ti substrates with 70 keV by varying dose of 0, 2, 5, and $10{\times}10^{17}/cm$^2$$. In addition, $N^+ion$implanted TiO$_2$ specimens were annealed at $600^{\circ}C$ for 2 hours in Atmosphere. We investigated the color evolution, surface roughness, and hardness of specimens with doses. We report that the color changed from white into dark-yellow as dose increased. ion implanted surfaces became smooth when they were annealed. Moreover, hardness increased up to 10% when we annealed ion implanted TiO$_2$. Our results imply that we may enhanced titanium color and surface hardness.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.62-66
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• 2002

Hydraulic pumps are used to control the landing wheels of aircrafts, and their proper operation is vital to plane safety It is well hewn that adhesive wear failure is a major cause of pump failure. A dual nitrogen plasma immersion ion implantation process calling for the implantation of nitrogen at two different energies and doses has been developed to enhance the surface properties of the disks in the pumps. The procedures meet the strict temperature requirement of <200$^{\circ}C$, and after the treatment, the working lifetime of the pumps increases by more than a factor of two. This experimental protocol has been adopted by the hydraulic pump factory as a standard manufacturing procedure.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.325-328
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced $\Delta$ Rp increase using buffered N- implantation with tilt and 4X-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N- concentration which is intentionally caused by Ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation.

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1553-1555
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• 1996

This paper deals with latchup effect in CMOS retrograde well, focusing on their dependence on I/I energy conditions, so we derived some latchup characteristics from simulation for different I/I conditions on implantation energies which were used in process simulation. From these results, we could understand the dependency of CMOS retrograde well latchup on I/I energy condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.705-710
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• 1998

Intrinsic gettering is usually to improve wafer quality, which is an important factor for reliable ULSI devices. In order to generate oxygen precipitation in lightly and heavily boron doped silicon wafers with or without high $^75 As^+$ ion implantation, the 2-step annealing method was adopted. After annealing, the were cleaved and etched with th Wright etchant. The morphology of cross section on samples was inspected by FESEM(field emission scanning electron microscopy). The morphology of unimplanted samples was rater rough than that of the implanted. Oxygen precipitation density observed by an optical microscope in lightly boron doped samples was about 3$\times10^6/cm^3$. However, in heavily boron doped samples, the density of oxygen precipitation was largest at $600^{\circ}C$ in 1st annealing, and decreased abruptly until $800^{\circ}C$, But it increased slightly at $1000^{\circ}C$ and was independent with the implantation.