• 한국진공학회지
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• 제8권1호
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• pp.36-42
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• 1999

이온빔 스퍼터링 방법으로 n-type si 기판에 고팅된, 수소를 함유하지 않은 다이아몬드성 카본 필름의 전계 방출 특성을 조사하였다. 필름의 구조나 두께에 관계없이 전계 방출 전류는 양극과 시편의 표면사이에서 발생하는 electrical breakdown에 의해 현저히 증가하였으며, 이때의 effective work function은 약 0.1eV의 작은 값을 가지고 있었다. 텅스텐 tip을 이용하여 breakdown에 의해 발생한 시편표면의 손상수위 근처를 scanning 하면서 전계 방출 전류를 측정하여, 전계 방출이 일어나는 정확한 위치를 확인하였다. 전계 방출은 breakdown에 의해 발생한 표면 손상 부위의 모든 곳에서 균일하게 일어나는 것이 아니라 특정 부위에서 집중적으로 관찰되었다. Auger electron spectroscopy와 SEM을 이용한 분석을 통해 손상 부위 중 Si과 C의 화합물이 형성된 곳에서만 절계 방출이 일어나고 있음을 알 수 있었으며, 손상부위의 형상변화는 전계 방출의 충분조건이 아니었다. 본 연구의 결과는 breakdown에 의한 전기 방출 전류의 증가는 시편 표면의 형상 변화에 의한 전계증진의 효과보다는 표면에서 발생하는 화학적 결합의 변화에 기인하고 있음을 보여준다.

• Bulletin of the Korean Chemical Society
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• 제30권7호
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• pp.1553-1558
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• 2009

A series of Eu(III) complexes with various neutral ligands (2,2’:6’,2"-terpyridine (T), diglyme (D), 1N-(2-dimethylamino) ethyl)-1N, 2N, 2N-trimethylethane-1,2-diamine (PT), di-(2-picolyl)-amine derivative (HT), and multidentate terpyridine derivative (DT)) were synthesized to investigate the effect of coordination environment on the sensitized luminescence of Eu(III) complexes. The nine coordination sites of the $Eu^{3+}$ ion are occupied by three bidentate carboxylate moieties and one neutral ligand. The highest emission intensity is obtained for $Eu^{3+}$- $[NA]_3$ (PT), due to the difference in energy transfer efficiency and symmetry of the first coordination sphere of $Eu^{3+}$ ion. But, the lowest emission intensity is obtained for $Eu^{3+}$-$[NA]_3$(T). Terpyridine may not play an important role antenna for photosensitizing $Eu^{3+}$ ion. It could be attributed to the weak spectral overlap integral J value between its phosphorescence band and $Eu^{3+}$ion absorption band. Therefore, different coordination environment of $Ln^{3+}$ ion play an important role in providing sensitization of lanthanide ion emission.

• 대한화학회지
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• 제44권6호
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• pp.541-546
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• 2000

리간드 증감 유발 형광법을 이용하여 Tb(III)-L-dopa (L-3,4-dihydroxyphenyl alanine) 착이온의 방출세기를 측정함으로써 수용액 중의 L-dopa를 정량하는 방법에 대하여 연구하였다. 들뜸파장, pH, 보조 형광증가제의 선택, Tb(III) 이온의 농도, 보조 형광증가제로 사용된 Lu(III) 이온의 농도 및 방출파장의 방출세기에 대한 영향을 조사하였다. 보조 형광증가제로서 Lu(III) 이온을 첨가하였을때 Tb(III) 이온의 방출세기가 현저히 증가함을 관찰하였고, L-dopa의 검출한계를 낮출 수 있었다. 보조 형광증가제를 첨가하지 않았을 경우에 L-dopa 검정곡선의 직선감응범위는 들뜸파장, pH 및 Tb(Ⅲ) 이온의 농도가 각각 300 nm, 8.0 및 $1.0{\times}10^{-4}$ M였을때, $5.0{\times}10^{-7}$ M~$1.0{\times}10^{-4}$ M였다. 이 조건에서의 검출한계는 $4.0{\times}10^{-8}$ M였다. 보조 형광증가제를 첨가하였을 경우에는 들뜸파장, pH, Tb(III) 이온의 농도, 보조 형광증가제로 사용된 Lu(III) 이온의 농도 및 방출파장이 각각 300 nm, 8.5, $1.0{\times}10^{-5}$ M, $1.0{\times}10^{-5}$ M 및 545 nm였을 때, 직선감응범위가 1.0×$10^{-8}$ M~2.0{\times}10^{-4}$ M였고, 이 때의 검출한계는 $1.0{\times}10^{-9}$ M였다.

• 한국전기전자재료학회논문지
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• 제18권12호
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• pp.1101-1105
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• 2005

We have investigated the optical properties of Erbium (Er)-implanted GaN by photoluminescence (PL). Various doses of Er ion were implanted on GaN epilayers by ion implantation. Visible green emission lines due to inner 4f shell transitions for $Er^{3+}$ were observed from the PL spectrum of Er-implanted GaN. The emission spectrum consists of two narrow green lines at 537 and 558 nm. The green emission lines are identified as $Er^{3+}$ transitions from the $^{5}H_{11/2}$ and $^{4}S_{3/2}$ levels to the $^{4}I_{15/2}$ ground state. The stronger peaks in the case with the dose of $5{\times}10^{14}cm^{-2}$, together with the relatively higher intensity of the $Er^{3+}$ luminescence in the lower doped sample. It implies that some damage remains in the case with the dose of $1{\times}10^{16}cm^{-2}$. The peak positions of emission lines due to inner 4f shell transitions for $Er^{3+}$ do not change with increasing temperature. It indicates that $Er^{3+}$ related emission depends very little on the ambient temperature.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.283-283
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• 2010

The liquid metal ion sources(LMIS) in FIB system have many advantages of high current density, high brightness and low ion energy spread. Most FIB systems use LMIS because the ion beam spot size of LMIS is smaller than other ion sources. LMIS is basically emitted by an extractor but the new electrode called the suppressor is able to control the emission current. We investigated characteristics LMIS with a suppressor, the function of the suppressor in LMIS, the change of the electric field by the suppressor and the advantages of using the suppressor. The characteristics of the threshold voltage and current-voltage (I-V) were observed under the varying extracting voltage with floated suppressor voltage, and under the varying suppressor voltages with fixed extractor voltage. We also simulated LMIS with the suppressor through CST(Computer Simulation Technology). The emission current increases as the suppressor voltage decreases because the suppressor voltage which restrains the electric field goes down, The threshold voltage increases as the suppressor voltage increases. We can explain characteristics and functions of LMIS with a suppressor using the electric field.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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• pp.525-528
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• 2004

The ion-induced secondary electron emission coefficient ${\gamma}$ and work function for MgO thin film with $O_2$ plasma treatment has been investigated by ${\gamma}$ -FIB (focused ion beam) system. The MgO thin film deposited from sintered material with $O_2$ plasma treatment is found to have higher ${\gamma}$ and lower work function than those without $O_2$ plasma treatment. The energy of various ions used has been ranged from 100eV to 200eV throughout this experiment. It is found that the highest secondary electron emission coefficient ${\gamma}$ has been achieved for 10 minutes of $O_2$ plasma treatment under RF power of 50W.

• 한국전기전자재료학회논문지
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• 제18권3호
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• pp.259-263
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• 2005

The changes in secondary electron emission coefficient(${\gamma}$) and work function($\Phi$$_{\omega}$) have been studied on the surface of MgO protective layer aster plasma(Ar. $O_2$) treatment using ${\gamma}$-focused ion beam (${\gamma}$-FIB) system. The values of ${\gamma}$ varied as follows: $O_2$-treated MgO > Ar-treated MgO > Non-treated MgO, and the work functions varied in the reverse order. The result indicates that both the physical etching and the chemical reaction of $O_2$-plasma removed the contaminating materials from the surface of MgO.

• Bulletin of the Korean Chemical Society
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• 제33권6호
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• pp.1967-1971
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• 2012

A hexavalent chromium (Cr (VI)) is one of the hazardous substances regulated by the RoHS. The determination of Cr (VI) in various polymers and printed circuit board (PCB) has been very important. In this study, the three different analytical methods were investigated for the determination of a hexavalent chromium in Acrylonitrile Butadiene Styrene copolymer (ABS) and PCB. The results by three analytical methods were obtained and compared. An analytical method by UV-Visible spectrometer has been generally used for the determination of Cr (VI) in a sample, but a hexavalent chromium should complex with diphenylcarbazide for the detection in the method. The complexation did make an adverse effect on the quantitative analysis of Cr (VI) in ABS. The analytical method using diphenylcarbazide was also not applicable to printed circuit board (PCB) because PCB contained lots of irons. The irons interfered with the analysis of hexavalent chromium because those also could complex with diphenylcarbazide. In this study, hexavalent chromiums in PCB have been separated by ion chromatography (IC), then directly and selectively detected by inductively coupled plasma atomic emission spectrometry (ICP-AES). The quantity of Cr (VI) in PCB was 0.1 mg/kg.

• 전기학회논문지
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• 제61권7호
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• pp.1001-1006
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• 2012

This paper presents a carbon nanotube (CNT) triode-structure field emitter as an ion source in a micro time-of-flight mass spectrometer(TOF-MS). In the ion source by field emission, the electrons emitted from cathodes under an electric field accelerated to the anode and ionize gas molecules by impact before arriving the anode. The generated positive ions are to be accelerated to the ion collector. Whereas most of ions are drawn to the cathodes in diode field emitters, a grid in the triode field emitter prevents the ions from being drawn to the cathodes. The triode field emitter is fabricated by micromachining. The cathode is composed of six CNT cylinders. The total size of the fabricated device is $8.0{\times}7.3{\times}1.9mm^3$. The anode and the grid current of the fabricated CNT field emitter were measured for various anode and grid voltages. When the anode and the grid voltages are 1000 V and 990 V, respectively, the emission current passing through the ionization region is 8.6 ${\mu}A$, which is a sufficient emission current for ionization and mass spectrometry.

• 한국재료학회지
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• 제22권5호
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• pp.215-219
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• 2012

Red phosphors $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ were synthesized with different concentrations of $Eu^{3+}$ ions by using a solid-state reaction method. The crystal structure of the red phosphors was found to be a tetragonal system. X-ray diffraction (XRD) results showed the (112) main diffraction peak centered at $2{\theta}=28.71^{\circ}$, and the size of crystalline particles exhibited an overall decreasing tendency according to the concentration of $Eu^{3+}$ ions. The excitation spectra of all the phosphors were composed of a broad band centered at 275 nm in the range of 230-310 nm due to $O^{2-}{\rightarrow}W^{6+}$ and a narrow band having a peak at 307 nm caused by $O^{2-}{\rightarrow}Eu^{3+}$. Also, the excitation spectrum presents several strong lines in the range of 305-420 nm, which are assigned to the 4f-4f transitions of the $Eu^{3+}$ ion. In the case of the emission spectrum, all the phosphor powders, irrespective of $Eu^{3+}$ ion concentration, indicated an orange emission peak at 594 nm and a strong red emission spectrum centered at 615 nm, with two weak lines at 648 and 700 nm. The highest red emission intensity occurred at x = 0.10 mol of Eu3+ ion concentration with an asymmetry ratio of 12.5. Especially, the presence of $Eu^{3+}$ in the $Ca_{1-1.5x}WO_4:{Eu_x}^{3+}$ shows very effective use of excitation energy in the range of 305-420 nm, and finally yields a strong emission of red light.