• Journal of Korea Foundry Society
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• v.24 no.5
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• pp.281-289
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• 2004

The present study focused on the estimation of the interfacial heat transfer coefficient as a function of the surface temperature of the aluminum casting at the mold/casting interface to investigate the effects of superheat and coating layer. The casting experiments of aluminum into a cylindrical copper mold were systematically conducted to obtain the thermal history during solidification. The thermal history recorded by four thermocouples embedded both in the mold and the casting was used to solve the inverse heat conduction problem using Beck's method. The effects of superheat and coating on the interfacial heat transfer coefficient in the liquid state, during the solidification, and in the solid state were comparatively discussed. In the liquid state, the interfacial heat transfer coefficient is thought to be affected by the roughness of the mold, the wettability of the casting on the mold surface, and the thermophysical properties of the coating layer. When the solidification begins, the air gap forms between the casting and the mold, and the interfacial heat transfer coefficient becomes a function of the air gap as well as surface roughness and the superheat. In the solid phase, it depends only upon the thermal conductivity and the thickness of the air gap. The coating layer reduces seriously the interfacial heat transfer coefficient in the liquid state and during the solidification.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.30-34
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• 2010

$CoSb_3$-based skutterudite compounds are promising candidates as thermoelectric (TE) materials used in intermediate temperature region. In this study, sintering of $CoSb_3$ powder and joining of $CoSb_3$ to copper-molybdenum electrode have been simultaneously performed by spark plasma sintering technique. The Ti foil was used for preventing the diffusion of copper into $CoSb_3$ and the Cu : Mo = 3 : 7 Vol. ratio composition was selected by the consideration of thermal expansion coefficients. The insertion of Ti interlayer between Cu-Mo and $CoSb_3$ was effective to join $CoSb_3$ to Cu-Mo by forming an intermediate layer of $TiSb_2$ at the Ti-$CoSb_3$ boundary. However, the formation of TiSb and TiCoSb intermediate layers deteriorated the joining properties by the generation of cracks in the interface of intermediate layer/$CoSb_3$ and intermediate/intermediate layers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.12
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• pp.70-78
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• 2000

A novel capacitance deviation-to-time interval converter based on ramp-integration is presented. It consists of two current mirrors, two schmitt triggers, and control digital circuits by the upper and lower sides, symmetrically. Total circuit has been with discrete components. The results show that the proposed converter has a linearity error of less than 1% at the time interval(pulse width) over a capacitance deviation from 295 pF to 375 pF. A capacitance deviation of 40pF and time interval of 0.2 ms was measured for sensor capacitance of 335 pF. Therefore, the high-resolution can be known by counting the fast and stable clock pulses gated into a counter for time interval. The application of a novel capacitance deviation-to time interval converter to a digital humidity controller is also presented. The presented circuit is insensitive to the capacitance difference in disregard of voltage source or temperature deviation. Besides the accuracy, it features the small MOS device count integrable onto a small chip area. The circuit is thus particularly suitable for the on-chip interface.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.724-728
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• 2001

In this study, the dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. The dielectric breakdown characteristics origin in epoxy composites were examined and various effects of dielectric breakdown on epoxy composites were also discussed. As a result, first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. And the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since this suggests that silane coupling agent improves interfacial combination and relaxs electric field concentration. Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1%, the applied field value needed to be under 21.5㎹/cm.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.779-783
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• 2002

The dielectric breakdown of epoxy composites used for transformers was experimented and then its data were simulated by Weibull distribution probability. As a result, first of all, speaking of dielectric breakdown properties, the more hardener increased the stronger breakdown strength at low temperature because of cross-linked density by the virtue of ester radical. And the breakdown strength of specimens with filler was lower than it of non-filler specimens because it is believed that the adding filler forms interface and charge is accumulated in it, therefore the molecular motility is raised, the electric field is concentrated, and the acceleration of electron and the growth of electron avalanche are early accomplished. In the case of filled specimens with treating silane, the breakdown strength become much higher since this suggests that silane coupling agent improves interfacial combination and relaxs electric field concentration. Finally, from the analysis of weibull distribution, it was confirmed that as the allowed breakdown probability was given by 0.1%, the applied field value needed to be under 21.5MVcm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.99-99
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• 2008

To grow the large diameter GaN with high structure and optical quality has been obtained by hydride vapor phase epitaxy(HVPE) method. In addition to the nitridation of $Al_2O_3$ substrate, we also developed a "step-growth process" to reduce or to eliminate the bowing of the GaN substrate caused by thermal mismatch during cool down after growth. The as-grown 380um thickness and 75mm diameter GaN layer was separated from the sapphire substrate by laser-induced lift-off process at $600^{\circ}C$. A problem with the free-standing wafer is the typically large bowing of such a wafer, due to the built in the defect concentration near GaN-sapphire interface. A polished G-surface of the GaN substrate were characterized by room temperature Double crystal X-ray diffraction (DCXRD), photoluminescence(PL) measurement, giving rise to the full-width at half maximum(FWHM) of the rocking curve of about 107 arcsec and dislocation density of $6.2\times10^6/cm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.49-49
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• 2008

ZnO-based varistors have been widely used for voltage stabilization or transient surge suppression in electric power systems and electronic circuits. Recently, It has reported that the varistor behavior with nonlinear coefficient of 6~17 in Mn-doped ZnO. In this study we have chosen the composition of ZnO-$TeO_2-Mn_3O_4$ (ZTM) system to the purpose of whether varistor behavior appeared in doped ZnO by the solid state sintering or not. We investigated the sintering and electric properties of 0.5~3.0 at% Mn doped ZnO-1.0 at% $TeO_2$ system. Electrical properties, such as current-voltage (I-V), capacitance-voltage (C-V), and impedance spectroscopy were conducted. $TeO_2$ itself melts at $732^{\circ}C$ in air but forms the $ZnTeO_3$ phase with ZnO as increasing temperature and therefore retards the densification of ZnO to $1000^{\circ}C$. The average grain size of sintered samples was at about $3{\mu}m$ and decreased with increasing Mn contents. It was found that a good varistor characteristics were developed in ZTM system sintered at $1100^{\circ}C$ (nonlinear coefficient $\alpha$ ~ 60). The results of C-V characteristics such as barrier height ($\Theta$), donor density ($N_d$), depletion layer (W), and interface state density ($N_t$) in ZTM ceramics were $4\times10^{17}cm^{-3}$, 0.7 V, 40 nm, and $1.6\times10^{12}cm^{-2}$, respectively. It will be discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z(T)"-logf plots in ZTM system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.4
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• pp.303-308
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• 2011

The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.

• Elastomers and Composites
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• v.54 no.4
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• pp.345-350
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• 2019

In this study, aliphatic polyketone (PK)/chopped carbon fiber (CCF) composites with various CCF contents were prepared using a modular intermeshing co-rotating twin screw extruder, and their mechanical and thermal properties such as tensile, flexural, and impact strength and thermal conductivity were investigated. The amount of CCF was increased from 0 to 50 wt%. The tensile and flexural strength of the PK/CCF composites increased as the CCF content increased, but the elongation at break and impact strength was lower than that of pure PK. Thermal properties such as heat distortion temperature and thermal conductivity increased as the CCF content increased. Morphological observations revealed that fiber orientation and interface adhesion between the PK and the CCF in the PK/CCF composites were formed due to the twin screw extrusion, which contributed to improving the mechanical and thermal properties of the composites.

• Elastomers and Composites
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• v.55 no.1
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• pp.59-66
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• 2020

Herein, we investigated the thermal conductivity and thermal stability of natural rubber composite systems containing hybrid fillers of boron nitride (BN) and aluminum nitride (AlN). In the hybrid system, the bimodal distribution of polygonal AlN and planar BN particles provided excellent filler-packing efficiency and desired energy path for phonon transfer, resulting in high thermal conductivity of 1.29 W/mK, which could not be achieved by single filler composites. Further, polyethylene glycol (PEG) was compounded with a commonly used naphthenic oil, which substantially increased thermal conductivity to 3.51 W/mK with an excellent thermal stability due to facilitated energy transfer across the filler-filler interface. The resulting PEG-incorporated hybrid composite showed a high thermal degradation temperature (T₂) of 290℃, a low coefficient of thermal expansion of 26.4 ppm/℃, and a low thermal distortion parameter of 7.53 m/K, which is well over the naphthenic oil compound. Finally, using the Fourier's law of conduction, we suggested a modeling methodology to evaluate the cooling performance in thermal management system.