• Title/Summary/Keyword: interface energy

Search Result 1,785, Processing Time 0.032 seconds

The Successive Complex Formation of Trivalent Lanthanide Ions with Ionophore ETH4120 at the Liquid/Liquid Interface (액체/액체계면에서 삼가 란탄족원소 이온과 중성담체(ETH4120)의 연속적인 착물형성 연구)

  • Choi, In Kyu;Yu, Zemu;Yeon, Jei Won;Chun, Kwan Sik;Kim, Won Ho;Eom, Tae Yoon
    • Journal of the Korean Chemical Society
    • /
    • v.43 no.2
    • /
    • pp.161-166
    • /
    • 1999
  • Transfer of lanthanide ions across the liquid/liquid interface facilitated by ionopore ETH4120 has been studied by using cyclic voltammetry (CV) and chronopotentiometry with cyclic linear current-scanning (CPCLCS) under the condition where the concentration of ETH4120 in nitrobenzene was much smaller than the concentration of lanthanide ions in aqueous solution. One cathodic current peak (transfer from aqueous to nitrobenzene phase) and two anodic current waves (transfer from nitrobenzene to aqueous phase) were observed. The cathodic wave was due to the formation of 1:1 (metal:ligand) complex and two anodic waves showed successive formation of 1:2 and 1:3 complexes in nitrobenzene solution. But there was no cathodic wave corresponding to two anodic waves. The ion transfer mechanism has also been discussed.

  • PDF

A Low-Power MPPT Interface for DC-Type Energy Harvesting Sources (DC 유형의 에너지 하베스팅 자원을 활용한 저전력의 MPPT 인터페이스)

  • Jo, Woo-Bin;Lee, Jin-Hee;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2018.10a
    • /
    • pp.35-38
    • /
    • 2018
  • This paper describes a low-power MPPT interface for DC-type energy harvesting sources. The proposed circuit consists of an MPPT controller, a bias generator, and a voltage detector. The MPPT controller consists of an MPG (MPPT Pulse Generator) with a schmitt trigger, a logic gate operating according to energy type (light, heat), and a sample/hold circuit. The bias generator is designed by employing a beta multiplier structure, and the voltage detector is implemented using a bulk-driven comparator and a two-stage buffer. The proposed circuit is designed with $0.35{\mu}m$ CMOS process. The simulation results show that the designed circuit consumes less than 100nA of current at an input voltage of less than 3V and the maximum power efficiency is 99.7%. The chip area of the designed circuit is $1151{\mu}m{\times}940{\mu}m$.

  • PDF

Low-Power MPPT Interface for Vibration Energy Harvesting Sources (진동 에너지 하베스팅 자원을 위한 저전력 MPPT 인터페이스)

  • Song, Soo-Min;Kim, Hyun-Chul;Lee, Eun-Gyeong;Yu, Chong-Gun
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
    • /
    • 2018.10a
    • /
    • pp.39-42
    • /
    • 2018
  • In this paper, a low-power MPPT interface circuit for vibration energy harvesting sources is presented. The designed circuit rectifies the harvested ac type energy to the dc type energy required to drive the system, and periodically samples and holds the open circuit voltage (Voc) through the MPPT controller, and transfers the harvested power to the load while maintaining the input voltage at 1/2 of the maximum available power point. All circuits have been designed using a 0.35-um CMOS technology, and the operation has been verified through simulation. Simulation results show that the designed circuit consumes 98nA of current at 3V input voltage and the maximum power efficiency is 99.21%. The designed chip occupies $1.281mm{\times}1.236mm$.

  • PDF

Impact Damge and Residual Bending Strength of CFRP Composite Laminates Subjected to Impact Loading Fracture Mechanism and Impact Damage of Orthotropy Laminated Plates (충격하중을 받는 CFRP 적층판의 충격손상과 굽힘 잔류강도 직교 이방성 적층판의 충격손상과 파과메카니즘)

  • 심재기;양인영;오택열
    • Transactions of the Korean Society of Mechanical Engineers
    • /
    • v.17 no.11
    • /
    • pp.2752-2761
    • /
    • 1993
  • The purpose of this study is to confirm the decreasing problems of residual bending strength, and the fracture machanism experimentally when CFRP composite laminates are subjected to Foreign Object Damage. Composite laminates used for this experiment are CFRP orthotropy laminated plates, which have two-interfaces [O/sub 6//sup o//90/sub 6//sup o/]sub sym/ and four-interfaces [O/sub 3//sup o//90/sub 6//sup o//O/sub 3//sup o]/sub sym/. When the specimen is subjected to transverse impact by a steel ball, the delamination area generated by impact damage is observed by using SAM(Scanning Acoustic Microscope). also, Thefracture surfaces obtained by three-point bending test were observed by using SEM (Scanning Electron Microscope). Then, fracture mechanism was investigated based on the observed delamination area and fracture surface. The results were summarized as follows; (1) It is found that for the specimen with more interface, the critical delamination energy is increased while delamination-development energy is decreased. (2) Residual bending strength of specimen A is greater than that of Specimen B within the impact range of impact energy 1. 65J (impacted-side compression) and 1. 45J (impacted-side tension). On the other hand, when the impact energy is beyond the above ranges, residual bending strength of specimen A is smaller than that of specimen B. (3) In specimen A and B, residual strength of CFRP plates subjected to impact damage is lower in the impacted-side compression than in the impacted-side tension. (4) In the case of impacted-side compression, fracture is propagated from the transverse crack generat-ed near impact point. On the other hand, fracture is developed toward the impact point from the edge of interface-B delamination in the case of impacted-side tension.

Interface Passivation Properties of Crystalline Silicon Wafer Using Hydrogenated Amorphous Silicon Thin Film by Hot-Wire CVD (열선 CVD법으로 증착된 비정질 실리콘 박막과 결정질 실리콘 기판 계면의 passivation 특성 분석)

  • Kim, Chan-Seok;Jeong, Dae-Young;Song, Jun-Yong;Park, Sang-Hyun;Cho, Jun-Sik;Yoon, Kyoung-Hoon;Song, Jin-Soo;Kim, Dong-Hwan;Yi, Jun-Sin;Lee, Jeong-Chul
    • 한국신재생에너지학회:학술대회논문집
    • /
    • 2009.06a
    • /
    • pp.172-175
    • /
    • 2009
  • n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

  • PDF

An Development of Leakage Current Sensing Module of the System on Chip Type Under Consideration of Electromagnetic Interface in Power Trunk Line (전력간선에서의 전자파 장애를 고려한 원칩형 누설전류 원격 검출단말기의 개발)

  • Kim, Dong-Wan;Park, Ji-Ho;Park, Sung-Won
    • The Transactions of the Korean Institute of Electrical Engineers P
    • /
    • v.58 no.4
    • /
    • pp.377-384
    • /
    • 2009
  • In this paper, leakage current sensing module of SoC(System on Chip)type and real time monitoring system under consideration of electromagnetic interface in power trunk line are developed. The first, leakage current sensing module of SoC type under consideration of electromagnetic interface is developed, and the developed sensing module of SoC type is composed of leakage sensing part, power supply part, interface part, communication part, AD(Alternating current to Direct current)convert part and amplification part. And also the electromagnetic compatibility is evaluated by conduction and radiation of EMI(Electromagnetic Interference) for developed sensing module. The developed system can have confidence, stability and do energy saving under mixed electric circumstance of the low voltage communication device and high voltage equipment. The second, the real time remote monitoring system is developed using designed wire and wireless communication module with leakage current sensing module of SoC type. The developed real time remote monitoring system can monitor sensing state, occurrence state of leakage current and alarm for each step etc.. And the device configuration, PCB layout for leakage current sensing module of system on chip type and the experiment configuration in consideration of EMI are presented. Also the measurement results of conduction and radiation for EMI are presented.

Enhanced Cathode/Sulfide Electrolyte Interface Stability Using an Li2ZrO3 Coating for All-Solid-State Batteries

  • Lee, Jun Won;Park, Yong Joon
    • Journal of Electrochemical Science and Technology
    • /
    • v.9 no.3
    • /
    • pp.176-183
    • /
    • 2018
  • In this study, a $Li_2ZrO_3$ coated $Li[Ni_{0.8}Co_{0.15}Al_{0.05}]O_2$ (NCA) cathode was applied to an all-solid-state cell employing a sulfide-based solid electrolyte. Sulfide-based solid electrolytes are preferable for all-solid-state cells because of their high ionic conductivity and good softness and elasticity. However, sulfides are very reactive with oxide cathodes, and this reduces the stability of the cathode/electrolyte interface of all-solid-state cells. $Li_2ZrO_3$ is expected to be a suitable coating material for the cathode because it can suppress the undesirable reactions at the cathode/sulfide electrolyte interface because of its good stability and high ionic conductivity. Cells employing $Li_2ZrO_3$ coated NCA showed superior capacity to those employing pristine NCA. Analysis by X-ray photoelectron spectroscopy and electron energy loss spectroscopy confirmed that the $Li_2ZrO_3$ coating layer suppresses the propagation of S and P into the cathode and the reaction between the cathode and the sulfide solid electrolyte. These results show that $Li_2ZrO_3$ coating is promising for reducing undesirable side reactions at the cathode/electrolyte interface of all-solid-state-cells.

Deformation of the Rubber Mold by Using the Cohesive Zone Model Under Cold Isostatic Pressing (응집영역모델을 이용한 정수압 성형 해석시 고무몰드의 변형거동)

  • Lee, Sung-Chul;Kim, Ki-Tae
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.32 no.5
    • /
    • pp.387-395
    • /
    • 2008
  • Stress distribution and interfacial debonding process at the interface between a rubber mold and a powder compact were analyzed during unloading under cold isostatic pressing. The Cap model proposed by Lee and Kim was used for densification behavior of powder based on the parameters involved in the yield function of general Cap model and volumetric strain evolution. Cohesive elements incorporating a bilinear cohesive zone model were also used to simulate interfacial debonding process. The Cap model and the cohesive zone model were implemented into a finite element program (ABAQUS). Densification behavior of powder was investigated under various interface conditions between a rubber mold and a powder compact during loading. The residual tensile stress at the interface was investigated for rubber molds with various elastic moduli under perfect bonding condition. The variations of the elastic energy density of a rubber mold and the maximum principal stress of a powder compact were calculated for several interfacial strengths at the interface during unloading.

Intermetallic Compounds Behavior at Laser Overlay Interface of Aluminum and Fe-based Powder (Al-Fe 레이저 오버레이층 경계면에서의 금속간화합물 거동)

  • Kang, Nam-Hyun;Yoo, Yeon-Gon;Lee, Chang-Woo;Kim, Jeong-Han
    • Journal of Welding and Joining
    • /
    • v.25 no.3
    • /
    • pp.51-56
    • /
    • 2007
  • A $CO_2$ laser overlay was conducted by using a Fe-based powder on the AC2B aluminum substrate. Cracks and intermetallic compounds (IMC) were observed inconsistently along the interface between the overlay and post-molten layer. A scanning electron microscopy (SEM) with energy dispersive spectroscopy (EDS) detected some Fe-rich IMC ($Fe_3Al$, FeAl) as well as the brittle Al-rich IMC ($Fe_2Al_5,\;FeAl_3$). Micro vickers hardness proved the formation of Al-rich IMC ($FeAl_3$) along the interface by showing HV0.1 $800{\sim}900$. Furthermore, nano indentation was successfully applied to investigate the behavior of IMC more precisely than the micro vickers hardness.

Electron Accumulation in LaAlO3/SrTiO3 Interfaces by the Broken Symmetry of Crystal Field

  • Choe, Hui-Chae;Park, Ha-Yan;Jeong, Yong-Jae
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.452-452
    • /
    • 2011
  • Using ab initio calculations, we reveal the origins of the extraordinarily increased electric conductivity of the LaAlO3/SrTiO3 interface. In both of the two (LaAlO3)m/ SrTiO3 heterojunction models (m=3, 5), the oxygen atoms in the cells were displaced toward the n-type interface and the Ti-centered octahedron structure was compressed along the [001] direction by the atomic reconstructions at the (LaAlO3)m/(SrTiO3)4 interfaces. As a result, the 3dxy orbital of the Ti atom was preferentially occupied due to the lowered energy state of the 3dxy orbital, which arises from the crystal field asymmetry. We reason that the extra electrons occupy the 3dxy orbital are accumulated at the interface by the displacement of the oxygen atoms. This accumulation contributes to the conductivity of the n-type interface. In addition, through a comparison of the atomic displacements and charge accumulation amounts between the two thickness models (m=3, 5), the thickness-dependency of the conductivity can be explained.

  • PDF