• Korean Journal of Optics and Photonics
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• v.19 no.2
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• pp.95-102
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• 2008

An advantage of parallax barrier displays is that they can also display 2D and 3D contents and can be automatically switched between the two types. But, as the viewer changes position, different views of the scene will be directed by the barrier to the visual system. Moving horizontally beyond a certain point will produce "image flipping" of the different views of the scene. These limitations make unavoidable the use of another autostereoscopic display solutions like eye tracking or increasing the number of views. In this paper, a method of the moving parallax barrier design is introduced to supplement a disadvantage of the fixed parallax barrier that provides observation at specific locations. For making the moving parallax barrier, the cross connector with 640 lines FPC is designed. A commercially available web camera is utilized to implement eye-tracking system and shows the experimental result.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.2
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• pp.58-62
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• 2005

A trench MOS barrier Schottky (TMBS) rectifier is proposed which utilizes the upper half of the trench sidewall as an active area. The proposed structure improves the forward voltage drop by 20$\%$ in comparison with the conventional one without degradation in breakdown voltage. An analytical model for the field distribution is given and compared with two-dimensional numerical simulations.

• Proceeding of EDISON Challenge
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• 2013.04a
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• pp.234-237
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• 2013

본 논문에서는 실리콘 나노선 구조를 갖는 모스펫 (Metal-Oxide-Semiconductor Field Effect Transistors, MOSFETs)과 쇼트키 장벽 트랜지스터 (Schottky-Barrier(SB) MOSFETs, SB-MOSFETs)의 전기적인 특성을 양자역학적 시뮬레이션 계산을 통해 비교하였다. 쇼트키 장벽 높이 (Schottky Barrier, ${\phi}_{SBH}$)에 따른 SB-MOSFETs의 터널링 특성을 분석하고, 소스/드레인 (S/D) 길이가 변함에 따라 달라지는 S/D 저항을 계산하여, ${\phi}_{SBH}$가 0eV인 SB-MOSFETs의 On과 Off $I_D$ 비율 ($I_{ON}/I_{OFF}$)이 MOSFETs보다 개선될 수 있음을 보였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.70-77
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• 1998

Ni/SiC Schottky diodes have been fabricated using epitaxial 4H-SiC and 6H-SiC wafers. The epitaxial n-type layers were grown on $n^{+}$ substrates, with a doping density of 4.0$\times$10$^{16}$ c $m^{-3}$ and a thickness of 10${\mu}{\textrm}{m}$. Oxide-termination has been adopted in order to obtain high breakdown voltage and low leakage current. The fabricated Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes show excellent rectifying characteristics up to the measured temperature range of 55$0^{\circ}C$. In case of oxide-terminated Schottky barrier diodes, breakdown voltage of 973V(Ni/4H-SiC) and 920V(Ni/6H-SiC), and a very low leakage current of less than 1nA at -800V has been observed at room temperature. On non-terminated Schottky barrier diodes, breakdown voltages were 430V(Ni/4H-SiC) and 160v(Ni/6H-SiC). At room temperature, SBH(Schottky Barrier Height), ideality factor and specific on-resistance were 1.55eV, 1.3, 3.6$\times$10$^{-2}$ $\Omega$.$\textrm{cm}^2$ for Ni/4H-SiC Schottky barrier diodes, and 1.24eV, 1.2, 2.6$\times$10$^{-2}$$\Omega$.$\textrm{cm}^2$/ for Ni/SH-SiC Schottky barrier diodes, respectively. These results show that both Ni/4H-SiC and Ni/6H-SiC Schottky barrier diodes are very promising for high-temperature and high power applications.s..

• Land and Housing Review
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• v.7 no.4
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• pp.225-237
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• 2016

This study is to investigate actual condition of passenger terminals, public facilities which are used by unspecified individuals, with high spread effect of certification system of Barrier Free introduced in 2007, evaluate possibility of the certification and prepare an effective way for certification in order to spread and settle the certification system. According to the investigation on the facilities' equipment level of 349 passenger terminals, which being nationally operated, 217 terminals could be certified and non-certified were 58. And, 29 was evaluated as the passenger terminals with high possibility to get Barrier Free certification by small scale of remodeling. The level of Barrier Free of investigated passenger terminals, according to the actual condition with certification index, were 40~55 percent. While the level of Barrier Free of internal facilities of the terminals was over 90percent, the level of sanitary facilities, information facilities, etc. fell short of 50 percents. In this study, pilot project of Barrier Free certification is proposed for enhance of passenger terminal facilities. Moreover, the selection of passenger terminals with high possibility of certification, local governments' strong will as the targets of pilot project for improvement of amenity level and Barrier Free certification and monitoring the project results are the way of the project.

• Korean Journal of Agricultural Science
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• v.38 no.2
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• pp.235-241
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• 2011

Recently, as people have become more interested in health issues, their demand on forest trails for bush walking exercise has increased. The purpose of the study is to select barrier factors into forest trail for disabled using wheelchairs. As a result this, it has selected 31 barrier factors through the Delphi method. Of all the these factors, the information board of forest trails, showing the location of the trails, has indicated the highest score of importance at 4.50. Next, securing hiker' walking safety space has indicated an importance level of 4.44; both the slope of forest trails and the height of obstacles have indicated an importance level of 4.38; and the effective width of forest trails has indicated the highest score of importance level of 4.33. From these indicated levels of importance, the respondents of the Delphi method consider the safety of users of forest trail' as the most important factor while the physically disables are hiking. That is why these factors have resulted in acquiring relatively higher values.

• Journal of Information Technology Services
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• v.8 no.2
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• pp.229-245
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• 2009

The Korean mobile telecommunication service market is faced with a tremendous competitive period, in which the market is entering into the maturity stage with launching of the 3rd generation service and with introduction of mobile number portability. In general, it is more important to sustain the old customers than to attracting new customers, as the life cycle of an industry is entering the maturity stage in which the growth rate of new customers is decreasing gradually or becoming stagnant. Thus, mobile telecommunication business has to seek a way to maintain the existing customers instead of promoting new customers. So this study investigates whether the service quality of mobile telecommunication could have effects on the switching barrier of the industry. In order to test the hypothesis on the effects of service quality of mobile telecommunication in Korea on switching barrier, this study collected the questionnaire response data of students including middle and high school students and undergraduates, who are regarded as the major customers in that mobile telecommunication industry.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.66-74
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• 2012

In this paper, the impact of segregation layer density ($N_{DSL}$) and length ($L_{DSL}$) on scalability and analog/RF performance of dopant-segregated Schottky barrier (DSSB) SOI MOSFET has been investigated in sub-30 nm regime. It has been found that, although by increasing the $N_{DSL}$ the increased off-state leakage, short-channel effects and the parasitic capacitances limits the scalability, the reduced Schottky barrier width at source-to-channel interface improves the analog/RF figures of merit of this device. Moreover, although by reducing the $L_{DSL}$ the increased voltage drop across the underlap length reduces the drive current, the increased effective channel length improves the scalability of this device. Further, the gain-bandwidth product in a common-source amplifier based on optimized DSSB SOI MOSFET has improved by ~40% over an amplifier based on raised source/drain ultrathin-body SOI MOSFET. Thus, optimizing $N_{DSL}$ and $L_{DSL}$ of DSSB SOI MOSFET makes it a suitable candidate for future nanoscale analog/RF circuits.

• JSTS:Journal of Semiconductor Technology and Science
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• v.7 no.2
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• pp.76-81
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• 2007

Threshold voltage ($V_{th}$) modeling of doublegate (DG) MOSFETs was performed, for the first time, by considering barrier lowering in the short channel devices. As the gate length of DG MOSFETs scales down, the overlapped charge-sharing length ($x_h$) in the channel which is related to the barrier lowering becomes very important. A fitting parameter ${\delta}_w$ was introduced semi-empirically with the fin body width and body doping concentration for higher accuracy. The $V_{th}$ model predicted well the $V_{th}$ behavior with fin body thickness, body doping concentration, and gate length. Our compact model makes an accurate $V_{th}$ prediction of DG devices with the gate length up to 20-nm.

• Journal of Institute of Control, Robotics and Systems
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• v.5 no.3
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• pp.338-343
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• 1999

In this paper, the fuzzy neural network for the obstacle avoidance, which consists of the straight-line navigation and the barrier elusion navigation, is proposed and examined. For the straight-line navigation, the fuzzy neural network gets two inputs, angle and distance between the line and the mobile robot, and produces one output, steering velocity of the mobile robot. For the barrier elusion navigation, four ultrasonic sensors measure the distance between the barrier and the mobile robot and provide the distance information to the network. Then the network outputs the steering velocity to navigate along the obstacle boundary. Training of the proposed fuzzy neural network is executed in a given environment in real-time. The weights adjusting uses the back-propagation of the gradient of error to be minimized. Computer simulations are carried out to examine the efficiency of the real time learning and the guiding ability of the proposed fuzzy neural network. It has been shown that the mobile robot that employs the proposed fuzzy neural network navigates more safely with and less trembling locus compared with the previous reported efforts.