• JSTS:Journal of Semiconductor Technology and Science
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• 제6권1호
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• pp.10-15
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• 2006

Various sizes of erbium/platinum silicided n/p-type Schottky barrier metal-oxide-semiconductor field effect transistors (SB-MOSFETs) are manufactured from $20{\mu}m$ to 10nm. The manufactured SB-MOSFETs show excellent DIBL and subthreshold swing characteristics due to the existence of Schottky barrier between source and channel. It is found that the minimization of trap density between silicide and silicon interface and the reduction of the underlap resistance are the key factors for the improvement of short channel characteristics. The manufactured 10 nm n-type SBMOSFET showed $550{\mu}A/um$ saturation current at $V_{GS}-V_T$ = $V_{DS}$ = 2V condition ($T_{ox}$ = 5nm) with excellent short channel characteristics, which is the highest current level compared with reported data.

• Journal of Electrical Engineering and Technology
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• 제10권3호
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• pp.952-957
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• 2015

Recently, the interior permanent magnet (IPM) motors for electric vehicle (EV) traction motor are being extensively researched because of its high energy density and high efficiency. The traction motor for EV requires high power and high efficiency at the wide driving region. Therefore, it is essential to fully consider the characteristics of the motor from low speed to high-speed driving regions. Especially, when the motor is driven at high speed, a significant centrifugal force is applied to the rotor. Thus, the rotor must be stably structured and be fully endured at the critical speed. In this paper, aims to examine the characteristics of the IPM motor by adjusting the width of air-barrier according to the permanent magnet position which is critical in designing an IPM motor for EV traction motors and to conduct a centrifugal force analysis for grasping mechanical safety.

• JSTS:Journal of Semiconductor Technology and Science
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• 제4권2호
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• pp.94-99
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• 2004

silicided 50-nm-gate-length n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors (SB-MOSFETs) with 5 nm gate oxide thickness are manufactured. The saturation current is $120{\mu}A/{\mu}m$ and on/off-current ratio is higher than $10^5$ with low leakage current less than $10{\mu}A/{\mu}m$. Novel phenomena of this device are discussed. The increase of tunneling current with the increase of drain voltage is explained using drain induced Schottky barrier thickness thinning effect. The abnormal increase of drain current with the decrease of gate voltage is explained by hole carrier injection from drain into channel. The mechanism of threshold voltage increase in SB-MOSFETs is discussed. Based on the extracted model parameters, the performance of 10-nm-gate-length SB-MOSFETs is predicted. The results show that the subthreshold swing value can be lower than 60 mV/decade.

• 조명전기설비학회논문지
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• 제28권1호
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• pp.114-122
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• 2014

This paper describes a study of the design conditions of a planar surface dielectric barrier discharge (DBD) reactors for generating negative air ions. The capacity of negative air ion generated by the surface DBD reactor is affected by the shape, area ratio and the location of the discharge and induction electrodes of it. To study the optimal design conditions of DBD reactors, the electrodes printed on the substrate of a PCB board is utilized to conduct kind of experiments: the distance of the each electrode along with the X-Y axis, the area ratio of the discharge electrode to induction electrode, and the symmetrical and asymmetrical location of two electrodes. The ion generation capacity is inverse proportional to the gap increases along with X-Y axis. And the optimum ion concentration generated by the ionizer was inspected when the electrodes area ratio was 3 and 5 times of the symmetrical and asymmetrical experimental condition respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.295-295
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• 2016

Recently, TCO films with low carrier concentration, high mobility and high work function are proposed beneficial as front electrode in HIT solar cell due to free-carrier absorption in NIR wavelength region and low Schottky barrier height in the front TCO/a-Si:H(p) interface. We report high transmittance and work function zirconium-doped indium tin oxide (ITO:Zr) films with various plasma (Ar/O2 and Ar) conditions. The role of (Ar/O2) plasma was to enhance the work function of the ITO:Zr films whereas the pure Ar plasma based ITO:Zr showed good electrical properties. The RF magnetron sputtered ITO:Zr films with low resistivity and high transmittance were employed as front electrode in HIT solar cells, yield the best performance of 18.15% with an open-circuit voltage of 710 eV and current density of 34.63 mA/cm2. The high work function ITO:Zr films can be used to modify the front barrier height of HIT solar cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.320-321
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indium-tin oxide (ITO) anodes using $CF_4g$ as and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $CF_4$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/$Alq_3$/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $CF_4$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The Impedance spectroscopy measurement of the devices with the $CF_4$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.436-437
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• 2006

In this work, impedance Spectroscopic analysis was applied to study the effect of plasma treatment on the surface of indum-tin oxide (ITO) anodes using $O_2$ gas and to model the equivalent circuit for organic light emitting diodes (OLEDs) with the $O_2$ plasma treatment of ITO surface at the anodes. This device with ITO/TPD/Alq3/LiF/Al structure can be modeled as a simple combination of a resistor and a capacitor. The $O_2$ plasma treatment on the surface of ITO shifts the vacuum level of the ITO as a result of which the barrier height for hole injection at the ITO/organic interface is reduced. The impedance spectroscopy measurement of the devices with the $O_2$ plasma treatment on the surface of ITO anodes shows change of values in parallel resistance ($R_p$) and parallel capacitance ($C_p$).

• 한국도서관정보학회지
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• 제48권1호
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• pp.227-243
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• 2017

본 연구는 노인이 건강정보검색에서 어떠한 어려움과 감정변화를 경험하는지를 살펴보고자 하였다. 이를 위해, 총 10명의 노인들을 대상으로 개별면담을 실시하였고, 그 결과 참여한 노인들이 경험하는 어려움에는 크게 인지적 어려움과 신체적 어려움이 있는 것으로 나타났다. 인지적인 어려움에는 첫째, 어디에서 어떻게 건강정보를 찾는지의 어려움을 나타내었고, 둘째, 정보검색도구의 이용의 어려움을 나타내었고, 셋째, 신뢰할 수 있는 정확한 정보선택의 어려움을 나타내었다. 참여한 노인들의 신체적인 어려움에 대해서는 눈, 손, 다리, 몸 전체에 어려움이 있다고 나타내고 있었다. 감정변화에 대해서는 정보검색 초기에는 '궁금하다'와 '감정이 없었다'가 중간단계에는 여러 감정상태를 보이다가 정보를 찾은 후에는 긍정적인 감정표현과 건강에 대한 경각심이나 두려움이 한편으로 생기기도 하였다. 이러한 연구결과를 도서관의 관점에서 분석하고 논의한 후, 노인들을 위한 도서관의 역할을 제언하였다.

• 대한전자공학회논문지SD
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• 제46권4호
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• pp.21-27
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• 2009

본 연구에서는 고온에서 Schottky barrier SOI nMOS 및 pMOS의 전류-전압 특성을 분석하기 위해서 Er 실리사이드를 갖는 SB-SOI nMOSFET와 Pt 실리사이드를 갖는 SB-SOI pMOSFET를 제작하였다. 게이트 전압에 따른 SB-SOI nMOS 및 pMOS의 주된 전류 전도 메카니즘을 온도에 따른 드레인 전류 측정 결과를 이용하여 설명하였다. 낮은 게이트 전압에서는 온도에 따라 열전자 방출 및 터널링 전류가 증가하므로 드레인 전류가 증가하고 높은 게이트 전압에서는 드리프트 전류가 감소하여 드레인 전류가 감소하였다. 고온에서 ON 전류가 증가하지만 드레인으로부터 채널영역으로의 터널링 전류 증가로 OFF 전류가 더 많이 증가하게 되므로 ON/OFF 전류비는 감소함을 알 수 있었다. 그리고 SOI 소자나 bulk MOSFET 소자에 비해 SB-SOI nMOS 및 pMOS의 온도에 따른 문턱전압 변화는 작았고 subthreshold swing은 증가하였다.