• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.33 no.11
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• pp.115-120
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• 2005

This paper describes the design and implementation of engineering model(EM) of Mass Memory Unit(MMU) for Science and Technology Satellite 2(STSAT-2) and the results of integration test. The use of Field-Programmable Gate Array(FPGA) instead of using private electric parts makes a miniaturization and lightweight of MMU possible. 2Gbits Synchronous Dynamic Random Access Memory(SDRAM) module for mass memory is used to store payload and satellite status data. Moreover, file system is applied to manage them easily in the ground station. RS(207,187) code improves the tolerance with respect to Single Event Upset(SEU) induced in SDRAM. The simulator is manufactured to verify receiving performance of payload data.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.37 no.2
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• pp.68-74
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• 2000

The problem of electromagnetic coupling through a narrow slit in a parallel-plate waveguide(PPW) covered by a dielectric slab with a conducting strip on the slab is considered for the case that the TEM wave is incident in the PPW. Coupled integral equations for the tangential electric field in the slit and the induced current over the strip are derived and solved numerically by use of the method of moments. In order to show the effect of the conducting strip on the coupling, some numerical results for the reflected and transmitted powers in the guide, the coupled power through the slit, the equivalent slit admittance, and radiation pattern are presented. From the results, it is observed that the maximum available power coupled through the slit exterior to the PPW amounts upto 50% of the incident power in the PPW.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.05a
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• pp.689-692
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• 2015

That induced voltage by an electrified railway line is related with the position of telecommunication line between traction power feeding systems is practically varified by measurements in the real field. This experimented fact is conformed with the calculated simulation provided by the ITU-T Directives concerning the protection of telecommunication lines against harmful effects from electric power and electrified railway lines. Therefore it is needed to consider at what position a telecommunication line is parallelized with power feeding line of traction system when an induction phenomenon is evaluated or measurement is carried out besides the length of parallelization and the separate distance between power line and telecommunication line.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.504-508
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• 2003

New banana-shaped achiral compounds, 4-chloro-1,3-phenylene bis [4-4(3-fluoro-9-alkenyloxy) phenyl-iminomethylbenzoate]s and 4-chloro-1,3-phenylene bis [4-4-(3-fluoro-10-alkanyloxy) phenyliminomethyl benzoate]s were synthesized by varying the substituent (X=H, F, or Cl); their electrooptical properties are described. The smectic phases, including a switchable chiral smectic C ($SmC^{\ast}$) phase, were characterized by differential scanning calorimetry, polarizing optical microscopy, and triangular method. The presence of vinyl end group at the terminals of linear side wings in the banana-shaped molecules induced a decrease in melting temperature. The smectic phase having the undecenyloxy group such $as-(CH_2)_9CH=CH_2$ showed ferroelectric switching, and its value of spontaneous polarization on reversal of an applied electric field was 2250 $nC/cm^2$, while the value of spontaneous polarization of the smectic phase having the decanyloxy group such as $-(CH2)_9CH_3$ was 3700 $nC/cm^2$. We could obtain the ferroelectric phase with low isotropic temperature by varying the end group at the terminals of linear side wings in the banana-shaped achiral molecules.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of the Society of Naval Architects of Korea
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• v.53 no.4
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• pp.290-299
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• 2016

The most powerful energy resource in nature is solar energy which becomes directly converted to electric power in worldwide. Most of the photovoltaic power plants are commonly installed on sunny side of the ground. Thus the installation of photovoltaic power plant could produce an unexpected adverse effect by sacrificing the productivity from green field or forest. To avoid these adverse effect floating photovoltaic plant has been devised and installed on inland reservoir. The photovoltaic plant could utilize ignored water surface without sacrificing the productivity of the ground. Additionally the photovoltaic efficiency has been reenforced by the cooling effect induced by the circulating air flow from water surface. The floating photovoltaic plant could be furnished solar tracking ability by tilting the system operated with the aid of the ballast system. This report is provided to introduce the design of the floating structure with solar panel which furnished solar tracking ability with the aid of ballast system.

• Earthquakes and Structures
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• v.11 no.6
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• pp.1077-1099
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• 2016

One of the main shortcomings in the current passive base isolation system is lack of adaptability. The recent research and development of a novel adaptive seismic isolator based on magnetorheological elastomer (MRE) material has created an opportunity to add adaptability to base isolation systems for civil structures. The new MRE based base isolator is able to significantly alter its shear modulus or lateral stiffness with the applied magnetic field or electric current, which makes it a competitive candidate to develop an adaptive base isolation system. This paper aims at exploring suitable control algorithms for such adaptive base isolation system by developing a close-loop semi-active control system for a building structure equipped with MRE base isolators. The MRE base isolator is simulated by a numerical model derived from experimental characterization based on the Bouc-Wen Model, which is able to describe the force-displacement response of the device accurately. The parameters of Bouc-Wen Model such as the stiffness and the damping coefficients are described as functions of the applied current. The state-space model is built by analyzing the dynamic property of the structure embedded with MRE base isolators. A Lyapunov-based controller is designed to adaptively vary the current applied to MRE base isolator to suppress the quake-induced vibrations. The proposed control method is applied to a widely used benchmark base-isolated structure by numerical simulation. The performance of the adaptive base isolation system was evaluated through comparison with optimal passive base isolation system and a passive base isolation system with optimized base shear. It is concluded that the adaptive base isolation system with proposed Lyapunov-based semi-active control surpasses the performance of other two passive systems in protecting the civil structures under seismic events.

• Korean Journal of Materials Research
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• v.11 no.6
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• pp.498-501
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• 2001

The effects of MnO$_2$ addition on the piezoelectric properties in 0.9Pb($Mg_{1/3}Nb_{2/3}$)$O_3$-0.1Pb$TiO_3$ relaxor ferroelectrics were studied in the ferroelectricity-dominated temperature range from -4$0^{\circ}C$ to 3$0^{\circ}C$. Dielectric, piezoelectric properties and electric-field- induced strain were examined to clarify the effect of MnO$_2$ addition. As the added amount of MnO$_2$ increase. dielectric and piezoelectric properties of Pb(Mg$_{1/3}$ Nb$_{2/3}$O$_3$ became harder. From the experimental results, it was suggested that Mn behaves as a ferroelectric domain pinning element.

• Journal of the Korean Ceramic Society
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• v.51 no.6
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• pp.527-532
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• 2014

$0.97Bi_{0.5+x}(Na_{0.78}K_{0.22})_{0.5-3x}TiO_3-0.03LaFeO_3$ lead-free piezoelectric ceramics were fabricated by a solid state reaction method. $LaFeO_3$ additives were added to $Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3$ for volatile compensation of bismuth and sodium ions in the sintering process. To create A-site vacancies, the mole ratio and charge valence of A-site ions ($Bi^{3+}$, $Na^+$ and $K^+$) were controlled. The improved piezoelectric properties were observed by addition of $LaFeO_3$ and control of A-site vacancies. In particular, a $d_{33}^*(S_{max}/E_{max})$ value of 614pm/V and an electric field induced strain of 0.33% was observed in $0.97Bi_{0.505}(Na_{0.78}K_{0.22})_{0.485}TiO_3-0.03LaFeO_3$ ceramic.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.4
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• pp.281-285
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• 2020

Oxide semiconductor devices have become increasingly important because of their high mobility and good uniformity. The channel length of oxide semiconductor thin film transistors (TFTs) also shrinks as the display resolution increases. It is well known that reducing the channel length of a TFT is detrimental to the current saturation because of drain-induced barrier lowering, as well as the movement of the pinch-off point. In an organic light-emitting diode (OLED), the lack of current saturation in the driving TFT creates a major problem in the control of OLED current. To obtain improved current saturation in short channels, we fabricated indium gallium zinc oxide (IGZO) TFTs with single gate and double gate structures, and evaluated the electrical characteristics of both devices. For the double gate structure, we connected the bottom gate electrode to the source electrode, so that the electric potential of the bottom gate was fixed to that of the source. We denote the double gate structure with the bottom gate fixed at the source potential as the BGFP (bottom gate with fixed potential) structure. For the BGFP TFT, the current saturation, as determined by the output characteristics, is better than that of the conventional single gate TFT. This is because the change in the source side potential barrier by the drain field has been suppressed.