• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.1
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• pp.53-59
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• 2003

Using Platinum-silicide (PtSi) formed between silicon substrate and carbon film, we have improved the field emission of electrons from carbon films. Pt films were deposited on n-Si(100) substrates at room temperature by DC sputter technique. After deposition, these PtSi thin films were annealed at 400 ~ $600^{\circ}C$ in a vacuum chamber, and the carbon films were deposited on those Pt/Si substrates by laser ablation at room temperature. The field emission property of C/Pt/Si system is found to be better than that of C/Si system and it is showed that property was improved with increasing annealing temperature. The reasons why the field emission from carbon film was improved can be considered as follows, (1)the resistance of carbon films was decreased due to graphitization, (2)electric field concentration effectively occurred because the surface morphology of carbon film deposited on Pt/si substrates with rough surface, (3)it is showed that annealing induced reaction between Pt film and Si substrate, as a consequence that the interfacial resistance between Pt film and Si substrate was decreased.

• Journal of the Korean Ceramic Society
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• v.52 no.4
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• pp.237-242
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• 2015

$Bi_{0.5}(Na_{0.78}K_{0.22})_{0.5}TiO_3$ (BNKT) lead-free piezoelectric ceramics modified by $LaMnO_3$ (LM) were fabricated by conventional solid-state method. The crystal structure and the morphology of the lead free ceramics were analyzed by XRD (X-ray diffraction) and FE-SEM (Field Emission Scanning Electron Microscopy). The LM modified BNKT ceramics have a phase transition from ferroelectric tetragonal to non-polar pseudo-cubic. Despite decreases in the remnant polarization ($P_r$) and coercive field ($E_c$) in the P-E hysteresis loops, the electric-field induced strain properties were significantly enhanced by the LM modification. The highest value of $S_{max}/E_{max}=412pm/V$ at an applied electric field of 5 kV/mm was found in BNKT-0.01LM ceramic.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.76.1-76.1
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• 2015

Optical resonances of metallic or dielectric nanoantennas enable to effectively convert free-propagating electromagnetic waves to localized electromagnetic fields and vice versa. Plasmonic resonances of metal nanoantennas extremely modify the local density of optical states beyond the optical diffraction limit and thus facilitate highly-efficient light-emitting, nonlinear signal conversion, photovoltaics, and optical trapping. The leaky-mode resonances, or termed Mie resonances, allow dielectric nanoantennas to have a compact size even less than the wavelength scale. The dielectric nanoantennas exhibiting low optical losses and supporting both electric and magnetic resonances provide an alternative to their metallic counterparts. To extend the utility of metal and dielectric nanoantennas in further applications, e.g. metasurfaces and metamaterials, it is required to understand and engineer their scattering characteristics. At first, we characterize resonant plasmonic antenna radiations of a single-crystalline Ag nanowire over a wide spectral range from visible to near infrared regions. Dark-field optical microscope and direct far-field scanning measurements successfully identify the FP resonances and mode matching conditions of the antenna radiation, and reveal the mutual relation between the SPP dispersion and the far-field antenna radiation. Secondly, we perform a systematical study on resonant scattering properties of high-refractive-index dielectric nanoantennas. In this research, we examined Si nanoblock and electron-beam induced deposition (EBID) carbonaceous nanorod structures. Scattering spectra of the transverse-electric (TE) and transverse-magnetic (TM) leaky-mode resonances are measured by dark-field microscope spectroscopy. The leaky-mode resonances result a large scattering cross section approaching the theoretical single-channel scattering limit, and their wide tuning ranges enable vivid structural color generation over the full visible spectrum range from blue to green, yellow, and red. In particular, the lowest-order TM01 mode overcomes the diffraction limit. The finite-difference time-domain method and modal dispersion model successfully reproduce the experimental results.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.210-214
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• 2002

The crystallization behavior of amorphous silicon (a-Si) film was investigated by using Cu-field aided lateral crystallization (Cu-FALC) process below $450^{\circ}C$. The lateral crystallization was induced from the Cu deposited region outside of pattern toward the Cu-free region inside of the pattern by applying an electric field during heat treatment. As expected, the lateral crystallization toward Cu-free region proceeded from negative toward positive electrode side. The occurrence of Cu-FALC phenomenon was interpreted in terms of dominant diffusing species in the reaction between Cu and Si. Even at the annealing temperature of $350^{\circ}C$, the large dendrite-shaped branches were formed in the crystallized region and the polarity in the lateral crystallization was clearly observed. Consequently, we could successfully crystallize the a-Si at the temperature as low as $350^{\circ}C$ by an electric field of 30 V/cm with fast crystallization velocity of 12 $\mu$m/h.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.12
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• pp.954-963
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• 2017

In this paper, we analyzed the electric/magnetic field distribution and SAR distribution in a human body due to the resonant-type wireless power transfer(WPT) system with an operating frequency of 6.78 MHz. To analyze the field distribution under the unperturbed condition, a prototype system was fabricated and the measured results were compared with the simulation results. For safety during measurement, the available power to the transmitter coil is limited to 1 W. To analyze the induced current density and SAR distribution, a simple human model consisting of three layers, skin, fat, and muscle, was used for the simulation. The electromagnetic wave exposure levels obtained through measurement and simulation were compared with the recommended levels by the ICNIRP.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.5
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• pp.46-51
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• 1989

The degradation phenomena induced by hot-carrier injection was studied from the shift of threshold voltage and subthreshold current curve in LDD NMOSFET degraded under different DC stress-biases. Threshold voltage shift ${Delta}V_{tex}$ defined in saturation region was separated into contri butions due to trapped oxide charge $V_{ot}$ and interface traps ${Delta}V_{it}$ generated from midgap to threshold voltage. Under th positive stress electric field (TEX>$V_g>V_d$) condition, the shift of threshold voltage was attributed to the electrons traped ar gate oxide but subthreshold swing was not negative stress electric field ($V_g) condition, holes seems to be injected positive charges so threshold voltage and subthreshold swing were increased.

• Journal of Ginseng Research
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• v.41 no.2
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• pp.169-179
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• 2017

Background: Ginsenosides are the main pharmacological components of Panax ginseng root, which are thought to be primarily responsible for the suppressing effect on oxidative stress. Methods: 2,2-diphenyl-1-picrylhydrazyl radical scavenging activity and oxygen radical absorption capacity were applied to evaluate the antioxidant activities of the ginsenosides. Human embryonic kidney 293 (HEK-293) cells were incubated with ginsenosides extracted by pulsed electric field (PEF) and solvent cold soak extraction (SCSE) for 24 h and then the injury was induced by $40{\mu}M$ $H_2O_2$. The cell viability and surface morphology of HEK-293 cells were studied using MTS assay and scanning electron microscopy, respectively. Dichloro-dihydro-fluorescein diacetate fluorescent probe assay was used to measure the level of intracellular reactive oxygen species. The intracellular antioxidant activities of ginsenosides were evaluated by cellular antioxidant activity assay in HepG2 cells. Results: The PEF extracts displayed the higher 2,2-diphenyl-1-picrylhydrazyl radical scavenging activity and stronger oxygen radical absorption capacity (with an oxygen radical absorption capacity value of $14.48{\pm}4.04{\mu}M\;TE\;per\;{\mu}g/mL$). The HEK-293 cell model also suggested that the protective effect of PEF extracts was dose-dependently greater than SCSE extracts. Dichloro-dihydro-fluorescein diacetate assay further proved that PEF extracts are more active (8% higher than SCSE extracts) in reducing intracellular reactive oxygen species accumulation. In addition, scanning electron microscopy images showed that the HEK-293 cells, which were treated with PEF extracts, maintained more intact surface morphology. Cellular antioxidant activity values indicated that ginsenosides extracted by PEF had stronger cellular antioxidant activity than SCSE ginsenosides extracts. Conclusion: The present study demonstrated the antioxidative effect of ginsenosides extracted by PEF in vitro. Furthermore, rather than SCSE, PEF may be more useful as an alternative extraction technique for the extraction of ginsenosides with enhanced antioxidant activity.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2002.02a
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• pp.365-367
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• 2002

A serious problem in using YBCO films for fault current limiter is inhomogeneities caused by imperpect manufacturing. So simultaneous quenches are a difficult problem which elements for current limiting are connected in series for increasing voltage ratings. We investigated extended electric field - current characteristics for current limiting element of YBCO film when 0-130mT magnetic field is applied. And quench characteristics were investigated in over all element and between elements of YBCO films. From the experiments, it was shown that applied magnetic fields using solenoid coil induced uniform quench distribution for over all stripes and simultaneous quench in all elements for current limiting of YBCO film was realized.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.2.1-2.1
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• 2011

Electrospray deposition (ESD) technique is fast finding its applicability in the field of thin film device manufacturing processes and the ease and cost efficiency attached to ESD process with possible integration with batch manufacturing technologies is the potential future of thin film device manufacturing. As the name suggests, the deposition phenomenon should solely be a spray achieved through electrostatic forces. In fact it is an imbalance between the surface forces arising because of the surface tension of the liquid to be sprayed and Maxwell stresses which are induced because of the electric field, that pull the liquid downwards from the capillary into a stable jet which further disintegrates into smaller droplets because of coulomb forces and hence a cloud of charged, mono-dispersed and extremely diminutive (sometimes up to femtolitres) droplets is achieved. The present talk is going to be exclusively about the electrospray process concepts, generation and possible applications.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1042-1045
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• 2002

The scaling of device dimension and supply voltage with high performance and reliability has been the main subject in the evolution of VLSI technology, The MOSFET structures become susceptible to high field related reliability problems such as hot-electron induced device degradation and dielectric breakdown. HLDBD(HLD Buffered Deposition) is used to decrease junction electric field in this paper. Also we compared the hot carrier characteristics of HLDBD and conventional.