Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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A Study on the Hot Carrier Effect Improvement by HLDBD (High-temperature Low pressure Dielectric Buffered Deposition)

  • Lee, Yong-Hui (Shinsung College, Division of Computer Application) ;
  • Kim, Hyeon-Ho (Chung-buck Provincial Univ. of Science & Technology. Dept of Electronic Information) ;
  • Woo, Kyong-Whan (Woosong Technical College. Dept of Internet Office) ;
  • Kim, Hyeon-Ki (Keukdong College, Dept of Electronic Telecommunication) ;
  • Yi, Jae-Young (Technical University of Budapest, Dept of Control Engineering & Informatics) ;
  • Yi, Cheon-Hee (Chong-ju University, Dept of Electronic Engineering)
  • Published : 2002.07.01
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Abstract

The scaling of device dimension and supply voltage with high performance and reliability has been the main subject in the evolution of VLSI technology, The MOSFET structures become susceptible to high field related reliability problems such as hot-electron induced device degradation and dielectric breakdown. HLDBD(HLD Buffered Deposition) is used to decrease junction electric field in this paper. Also we compared the hot carrier characteristics of HLDBD and conventional.

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