• 한국진공학회지
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• 제19권1호
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• pp.14-21
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• 2010

Ge은 Si에 비하여 높은 이동도를 갖기 때문에 차세대 고속 metal oxide semiconductor field effect transistors (MOSFETs) 소자를 위한 channel 물질로서 각광받고 있다. 그러나 화학적으로 안정한 게이트 산화막의 부재는 MOS 소자에 Ge channel의 사용에 주요한 장애가 되어왔다. 특히, Ge 기판 위에 고품질의 계면 특성을 갖는 게이트 절연막의 제조는 필수 요구사항이다. 본 연구에서, $HfO_xN_y$ 박막은 Ge 기판 위에 플라즈마 원자층 증착법(plasma-enhanced atomic layer deposition, PEALD)을 이용하여 증착되었다. 플라즈마 원자층 증착공정 동안에 질소는 질소, 산소 혼합 플라즈마를 이용한 in situ 질화법에 의하여 첨가되었다. 산소 플라즈마에 대한 질소 플라즈마의 첨가로 성분비를 조절함으로써 전기적 특성과 계면 성질을 향상시키는데 초점을 맞추어서 연구를 진행하였다. 질소 산소의 비가 1：1이었을 때, EOT의 값의 10% 감소를 갖는 고품질의 소자특성을 보여주었다. X-ray photoemission spectroscopy (XPS)와 high resolution transmission electron microscopy (HR-TEM)를 사용하여 박막의 화학적 결합 구조와 미세구조를 분석하였다.

• 한국표면공학회지
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• 제47권6호
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• pp.303-310
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• 2014

In this study, the average in-situ stress in metallic thin film was measured during deposition of the Cu thin films on the Si(111) wafer and then the phenomenon of stress shift by the interruption of deposition was measured using Cu thin films. We have observed the stress shift in accordance with changing amount of atom's movement between the surface and grain boundary through altering the grain size of the Cu thin film with variety of parameters. The grain size is known to be affected on the deposition rate, film thickness and deposition temperature. As a experimental results, the these parameters was not adequate to explain stress shift because these parameters affect directly on the amount of atom's movement between the surface and grain boundary as well as the grain size. Thus, we have observed the stress shift toward tensile side in accordance with the grain size changing through the interlayer deposition. From an experiment with inserting interlayer before deposit Cu, in thin film which has big grain size with high roughness, amount of stress movement is higher along direction of tensile stress after deposition that means, after deposition process, driving force of atoms moving in grain boundary and on the surface of the film is relatively higher than before.

• 전기전자학회논문지
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• 제21권1호
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• pp.85-88
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• 2017

본 연구에서는 OLED 소자 및 패시베이션 박막을 하나의 시스템에서 동시에 제작하여 진행할 수 있는 in-situ passivation 클러스터 시스템을 개발하고 이러한 시스템을 이용하여 OLED 디스플레이 제작 및 특성을 연구함으로써 플렉시블 디스플레이에 적용할 수 있는 기술을 구현하였다. In-situ passivation을 이용한 OLED의 제작 및 특성 분석에 관하여 연구하여 다음과 같은 결과를 얻었다. 첫째, In-situ 시스템으로 OLED 소자 제작 및 박막 패시베이션 가능한 시스템을 자체적으로 구축하였으며, 패시베이션 박막을 제작하여 그 특성을 평가한 결과 본 시스템의 응용 가능성을 제시할 수 있었다. 둘째, $SiO_2$, SiNx 무기 박막을 PECVD 방법으로 제작하여 OLED 패시베이션 박막으로 적용 가능성을 확인하였다. 본 연구결과, in-situ passivation 시스템의 적용 가능성을 확인할 수 있었고, 플렉시블 디스플레이에 적합한 패시베이션 방법으로서의 구현 가능성을 제시하였다.

• 한국입자에어로졸학회지
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• 제6권3호
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• pp.139-145
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• 2010

In this study, we investigated the particle formation during the deposition of borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG) films in thermal chemical vapor deposition reactor using in-situ particle monitor (ISPM) and particle beam mass spectrometer (PBMS) which installed in the reactor exhaust line. The particle current and number count are monitored at set-up, stabilize, deposition, purge and pumping process step in real-time. The particle number distribution at stabilize step was measured using PBMS and compared with SEM image data. The PBMS and SEM analysis data shows the 110 nm and 80 nm of mode diameter for BPSG and PSG process, respectively.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1996년도 제11회 학술발표회 논문개요집
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• pp.116-117
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• 1996

• Transactions on Electrical and Electronic Materials
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• 제3권3호
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• pp.14-17
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• 2002

The HDP (High Density Plasma) CVD process consists of a simultaneous sputter etch and chemical vapor deposition. As CMOS process continues to scale down to sub- quarter micron technology, HDP process has been widely used fur the gap-fill of small geometry metal spacing in inter-metal dielectric process. However, HBP CVD system has some potential problems including plasma-induced damage. Plasma-induced gate oxide damage has been an increasingly important issue for integrated circuit process technology. In this paper, thin gate oxide charge damage caused by HDP deposition of inter-metal dielectric was studied. Multiple step HDP deposition process was demonstrated in this work to prevent plasma-induced damage by introducing an in-situ top SiH$_4$ unbiased liner deposition before conventional deposition.

• 한국자기학회지
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• 제5권5호
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• pp.470-473
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• 1995

We have constructed an apparatus for in sity measurement of stress of the film prepared by sputtering using an optical noncontact displacement detector. A Change of the gap distance between the detector and the substrate, caused by stress of a deposited film, was detected by a corresponding change of the reflectivity. The sensitivity of the displacement detector was $5.9\;{\mu}V/{\AA}$ and thus, it was turned out to be good enough to detect stress caused by deposition of a monoatomic layer. The apparatus was applied to in situ stress measurements of Co/X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the very beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the film was thicker than about $100{\AA}$, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were observed, which is believed to be related to a lattice mismatch between the matching planes of Co and X.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• 전기전자학회논문지
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• 제24권4호
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• pp.1117-1121
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• 2020

본 연구에서는, 원자막증착법(ALD) 공정으로 증착된 SnO2 촉매를 AlGaN/GaN 이종접합 FET에 적용하여 NO2 가스 검출이 가능한 것을 확인하였다. AlGaN/GaN-on-si 플랫폼에서 제작 된 HFET 센서로 NO2 100 ppm에 대하여 In-situ SiN이 있는 소자와 없는 소자가 각각 100 ℃, 200 ℃에서 10.1% 및 17.7%, 5.5% 및 38%의 감지성능을 확인하였다.

• 한국전기전자재료학회논문지
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• 제28권2호
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• pp.104-108
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• 2015

Al thin films were deposited on TiN/Si(100) via metal-organic chemical vapor deposition using N-methylpyrrolidine alane as a precursor. Characterization of the deposited films were investigated with SEM, XRD, ${\alpha}$-step, AFM, 4-point probe. The early stage of Al thin film deposition was analyzed by in-situ surface reflectance measurement with laser and photometer apparatus. The surface reflectance were changed greatly during the initial 30~40 seconds. There were two increases and two decreases in the surface reflectance, thus the sequence of Al films were deposited at 8 significant points of the surface reflectance change. Surface topograph and cross-sectional view of each film were analyzed with SEM. Al films were grown in the complex mechanism of Volmer-Weber and Stranski-Krastanov process.