• 한국전기전자재료학회논문지
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• 제13권12호
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• pp.1003-1010
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• 2000

Thin films of vanadium oxide(VOx) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition, molecular structure and optical properites of films in-situ annealed in O$_2$ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS, RTIR and optical absorption measurements. The films annealed below 200$\^{C}$ are amorphous, and those annealed above 300$\^{C}$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been observed with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. Also indirect and direct optical band gaps were increased with increasing the annealing temperature and time.

• Bulletin of the Korean Chemical Society
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• 제29권12호
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• pp.2325-2326
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• 2008

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.459-466
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• 2000

For the applications in the ultra-large-scale-integration (ULSI) metallization processing copper thin films have been prepared by metal organic chemical vapor deposition (MOCVD) technology on TiN/Si substrates. The films have been deposited with varying the experimental conditions of substrate temperatures and copper source vapor pressures. The films were then annealed in a vacuum condition after the deposition and the annealing effect to the electrical conductivity of the films was measured. The grain size and the crystallinity of the films were observed to be increased by the post annealing and the electrical conductivity was also increased. The best electrical property of the copper film was obtained by in-situ annealing treatment at above 40$0^{\circ}C$ for the sample prepared at 18$0^{\circ}C$ of the substrate temperature.

• Nuclear Engineering and Technology
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• 제56권2호
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• pp.402-409
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• 2024

High energy neutron irradiations impact on structural and electrical properties of alumina are studied with particular emphasis on real time in-situ radiation induced conductivity measurement in low flux region. Polycrystalline Al₂O₃ samples are subjected to high energy neutrons produced from D-T neutron generator and Am-Be neutron source. 14 MeV neutrons from D-T generator are chosen to study the role of fast neutron irradiation in the structural modification of samples. Real time in-situ electrical measurement is performed to investigate the change in insulation resistance of Al₂O₃ due to radiation induced conductivity at low flux regime. During neutron irradiation, a significant transient decrease in insulation resistance is observed which recovers relative higher value just after neutron exposure is switched off. XRD results of 14 MeV neutron irradiated samples suggest annealing effect. Impact of relatively low energy neutrons on the structural properties is also studied using Am-Be neutrons. In this case, clustering is observed on the sample surface after prolonged neutron exposure. The structural characterizations of pristine and irradiated Al₂O₃ samples are performed using XRD, SEM, and EDX. The results from these characterizations are analysed and interpreted in the manuscript.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.41-43
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• 2004

Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

• 한국진공학회:학술대회논문집
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• 한국진공학회 2004년도 제27회 학술발표회 초록집
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• pp.96-96
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• 2004

• 한국진공학회:학술대회논문집
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• 한국진공학회 2001년도 제21회 학술발표회 초록집
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• pp.63-63
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• 2001

• 마이크로전자및패키징학회지
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• 제20권3호
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• pp.45-51
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• 2013

3차원 적층 패키지를 위한 Cu/Sn-3.5Ag 미세범프의 솔더 구조에 따른 금속간화합물 성장거동을 분석하기 위해 솔더 두께가 각각 $6{\mu}m$, $4{\mu}m$인 서로 다른 구조의 미세범프를 $130^{\circ}C$, $150^{\circ}C$, $170^{\circ}C$ 조건에서 실시간 주사전자현미경을 이용하여 실시간 금속간화합물 성장 거동을 분석하였다. Cu/Sn-3.5Ag($6{\mu}m$) 미세범프의 경우, 많은 양의 솔더로 인해 접합 직후 솔더가 넓게 퍼진 형상을 나타내었고, 열처리 시간경과에 따라 $Cu_6Sn_5$ 및 $Cu_3Sn$금속간화합물이 성장한 후, 잔류 Sn 소모 시점 이후 $Cu_6Sn_5$가 $Cu_3Sn$으로 상전이 되는 구간이 존재하였다. 반면, Cu/Sn-3.5Ag($4{\mu}m$) 미세범프의 경우, 적은양의 솔더로 인해 접합 직후 솔더의 퍼짐 현상이 억제 되었고, 접합 직후 잔류 Sn상이 존재하지 않아서 금속간화합물 성장구간이 억제되고, 열처리 시간경과에 따라 $Cu_6Sn_5$가 $Cu_3Sn$으로 상전이 되는 구간만 존재하였다. 두 시편의 $Cu_3Sn$상의 활성화 에너지의 값은 Cu/Sn-3.5Ag($6{\mu}m$) 및 Cu/Sn-3.5Ag($4{\mu}m$) 미세범프가 각각 0.80eV, 0.71eV로 나타났고, 이러한 차이는 반응기구 구간의 차이에 따른 것으로 판단된다. 따라서, 솔더의 측면 퍼짐 보다는 접합 두께가 미세범프의 금속간화합물 반응 기구를 지배하는 것으로 판단된다.

• 한국정보통신학회논문지
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• 제4권4호
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• pp.809-815
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• 2000

The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.The box capacitor structure with HSG-Si described here reliably achieves a cell capacitance of 28fF with a cell area of a $0.4820\mum^2$ for 128Mbit DRAM. An HSG-Si formation technology with seeding method, which employs Si2H6 molecule irradiation and annealing, was applied for realizing 64Mbit and larger DRAMS. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous doped amorphous silicon electrodes. The HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1277_1278
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• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.